GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice （SL） short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs（O01） semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.     

氮、氧及金属离子注入铝合金表面改性层摩擦磨损性能研究

在不同温度下对6061铝合金分别进行了氮、氧等离子体浸没离子注入处理，氮与氢混合气体等离子体浸没离子注入处理，以及在氮气氛中的钛或铝等离子体浸没离子注入与沉积处理；采用X射线光电子能谱仪分析了注入改性层的相组成、高温下氧离子注入层的成分及注入离子浓度的深度分布；同时测定了注入改性层的显微硬度及摩擦磨损性能．结果表明：经300℃下氧离子注入处理后铝合金表面形成了较厚的硬质Al2O3层，从而使铝合金表面的耐磨寿命显著延长；经氮／氢混合注入以及氮气氛中金属离子注入和沉积处理后的铝合金表面的抗磨性能显著改善；同单一氮离子注入相比，氮／氢混合注入能更有效地改善铝合金的性能．     

Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattiee （SL） midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb（001） residud p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/SML InAs/GaS5 SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 μm at 77K, the peak directivity of the detectors is 1.6 × 10^10 cm.Hz^1/2 W^-1 at 77K.     

Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSh crystal quality and smooth GaSh surface. The optimized growth temperature and thickness of AlSb layers are found to be 450℃ and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 × 10 μm^2 is achieved as a 0.5 μm GaSh film is grown under optimized conditions.