Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot

Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single photons emitted from single In As quantum dot at 864 nm is down converted to 1552 nm by using a fiber-coupled periodically poled lithium niobate(PPLN) waveguide and a 1.95 μmm pump laser, and the frequency conversion efficiency is ~40%. The singlephoton purity of quantum dot emission is preserved during the down-conversion process, i.e., g~((2))(0), only 0.22 at 1552 nm.This present technique advances the Ⅲ-Ⅴ semiconductor quantum dots as a promising platform for long-distance quantum communication.     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.     

硅纳米线的制备及其光学性能的研究

通过金属催化化学刻蚀的方法中的两步法制备出了具有阵列结构的硅纳米线,研究了不同刻蚀条件对硅纳米线形貌的影响,分析了形成不同形貌的原因.测定了不同条件下制备的硅纳米线的光吸收性能,总结了影响光吸收性能的因素和原因,根据硅纳米线的光吸收图求出了硅纳米线的禁带宽度,说明了硅纳米线已经具备不同于硅片的性能.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.     

Spectral dynamical behavior in two-section,quantum well,mode-locked laser at 1.064 μm

In this study, two-section mode-locked semiconductor lasers with different numbers of quantum wells and different types of waveguide structures are made. Their ultrashort pulse features are presented. The spectral dynamical behaviors in these lasers are studied in detail. In the simulation part, a two-band compressive-strained quantum well(QW) model is used to study thermally induced band-edge detuning in the amplifier and saturable absorber(SA). A sudden blue shift in laser spectrum is expected by calculating the peak of the net gain. In the experiment part, the sudden blue shift in the emission spectrum is observed in triple QW samples under certain operating conditions but remains absent in single QW samples.Experimental results reveal that blue shift phenomenon is connected with the difference between currents in two sections.Additionally, a threshold current ratio for blue-shift is also demonstrated.     

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

We report on the resonance fluorescence(RF) from single In As quantum dots(QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He–Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond(ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.