Development of 0.5-V Josephson junction array devices for quantum voltage standards

The design, fabrication, and the characterization of a 0.5-V Josephson junction array device are presented for the quantum voltage standards in the National Institute of Metrology(NIM) of China. The device consists of four junction arrays, each of which has 1200 3-stacked Nb/Nb_xSi_(1-x)/Nb junctions and an on-chip superconducting microwave circuit which is mainly a power divider enabling each Josephson array being loaded with an equal amount of microwave power. A direct current(dc) quantum voltage of about 0.5 V with a ～1-mA current margin of the 1 st quantum voltage step is obtained.To further prove the quality of NIM device, a comparison between the NIM device with the National Institute of Standards and Technology(NIST) programmable Josephson voltage standard(PJVS) system device is conducted. The difference of the reproduced 0.5-V quantum voltage between the two devices is about 0.55 nV, which indicates good agreement between the two devices. With the homemade device, we have realized a precise and applicable 0.5-V applicable-level quantum voltage.     

Interface-Optical-Phonon Modes in Quasi-one-dimensional Wurtzite Rectangular Quantum Wires

By employing the dielectric continuum model and Loudon‘s uniaxial crystal model, the interface optical(IO) phonon modes in a freestanding quasi-one-dimensional (Q1D) wurtzite rectangular quantum wire are derived and analyzed. Numerical calculation on a freestanding wurtzite GaN quantum wire is performed. The results reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires, the free wave-number kz in z-direction and the dielectric constant of the nonpolar matrix. The degenerating behavior of the IO modes in Q1D wurtzite rectangular quantum wire has been clearly observed in the case of small wave-number kz and large ratio of length to width of the rectangular crossing profile. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. The present theories can be looked on as a generalization of that in isotropic rectangular quantum wires, and it can naturally reduce to the case of Q1D isotropic quantum wires once the anisotropy of the wurtzite material is ignored.     

Binding Energies of Excitons in Square Quantum-Well Wires in the Presence of a Magnetic Field

The binding energies of the ground state of excitons in the GaAs/Ga1-xAlxAs square quantum-well wire in the presence of a magnetic field are investigated by using the variational method. It is assumed that the magnetic field is applied parallel to the axis of the wire. The calculations of the binding energy as a fimction of the wire size have been performed for infinite and finite confinement potentials. The contribution of the magnetic field makes the binding energy larger obviously, particularly for the wide wire, and the magnetic field is much more pronounced for the binding energy in a square quantum wire than that in a cylindrical quantum wire. The mismatch of effective masses between the well and the barrier is also considered in the calculation.     

Electronic Transport for a Quantum Wire Partly Irradiated under THz Electromagnetic Wave

We study the electronic transport of a quantum wire partly irradiated under an external terahertz (THz) electromagnetic field. Using the free-electron model and scattering matrix approach we demonstrate that although the electrons in a ballistic quantum wire only suffer from lateral collision with photons, the reflection of electrons also takes place. More interestingly there is a sharp step-structure in the transmission probability as the total energy of electron increases to a threshold value when the frequency of electromagnetic field is resonant with the separation of lateral levels of the wire. The interference structure of transmission for the system apparently appears when the field only irradiates the middle part of the wire.     

X-ray observations of tungsten wire array Z-pinch implosions on QiangGuang-1 facility

Z-pinch experiments with two arrays consisting, respectively, of 32 4-μm- and 6-μm-diameter tungsten wires have been carried out on QiangGuang-1 facility with a current rising up to 1.5MA in 80ns. At early time of implosion, x-ray framing images show that the initial emission comes from the central part of arrays, and double clear emission rings, drifting to the anode and the cathode at 5×10⁶cm/s and 2.4×10⁷cm/s respectively, are often produced near the electrodes. Later, in a 4-μm-diameter tungsten wire array, filamentation caused by ohmic heating is prominent, and more than ten filaments have been observed. A radial inward shift of arrays starts at about 30\,ns earlier than the occurrence of the x-ray peak power for both kinds of arrays, and the shrinkage rate of emission region is as high as 1.7×10⁷cm/s in a 4-μm-diameter tungsten wire array, which is two times higher than that in a 6-μm one. Emission from precursor plasmas is observed in implosion of 6-μm-diameter tungsten wire arrays, but not in implosion of a 4-μm-diameter tungsten wire array. Whereas, in a 4-μm-diameter tungsten wire array, the soft x-ray emission shows the growth of m=1 instability in the plasma column, which is caused by current. The reasons for the discrepancy between implosions of 4-μm- and 6-μm-diameter tungsten wire arrays are explained.     

Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires

The binding energy of an exciton bound to a neutral donor (D^0, X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.     

Effect of Hydrostatic Pressure on Interband Transitions in Coupled Quantum Wires

We calculate the exciton binding energy and interband optical absorption in a rectangular coupled quantum wire under the hydrostatic pressure in the effective-mass approximation, using the variational approach. It is found that the interband optical absorption strongly depend on the hydrostatic pressure and the coupling parameter, and that the magnitude of the absorption coefficient for the HH1-E1 transition in the coupled quantum wire is larger than that of the single quantum wire.     

Laser-manipulated the multiphoton transitions of a harmonically trapped particle

A single particle magneto-confined in a one-dimensional (1D) quantum wire experiences a harmonic potential, and imposing a sharply focused laser beam on an appropriate site shapes a $\delta$ potential. The theoretical investigation has demonstrated that for a sufficiently strong $\delta$ pulse the quantum motional stationary state of the particle is one of the eigenstates of the free harmonic oscillator, and it is determined by the site of the laser beam uniquely, namely a quantum state is admissible if and only if the laser site is one of its nodes. The numerical computation shows that all the nodes of the lower energy states with quantum numbers $n \le 20$, except the coordinate origin, are mutually different. So we can manipulate the multiphoton transitions between the quantum states by adjusting the position of the laser $\delta$ pulse and realize the transition from an unknown higher excitation state to a required lower energy state.     

Persistent spin current in a quantum wire with weak Dresselhaus spin——orbit coupling

The spin current in a parabolically confined semiconductor heterojunction quantum wire with Dresselhaus spin--orbit coupling is theoretically studied by using the perturbation method. The formulae of the elements for linear and angular spin current densities are derived by using the recent definition for spin current based on spin continuity equation. It is found that the spin current in this Dresselhaus spin--orbit coupling quantum wire is antisymmetrical, which is different from that in Rashba model due to the difference in symmetry between these two models. Some numerical examples for the result are also demonstrated and discussed.     

Magnetic and Distribution of Magnetic Moments in Amorphous Fe89.7P10.3 Alloy Nanowire Arrays

Binary amorphous Fe89.7P10.3 alloy nanowire arrays in been fabricated in an anodic aluminium oxide template diameter of about 40nm and length of about 3μm have by electrodeposition. Magnetic properties of the samples are investigated by mean of vibrating sample magnetometer, transmission Mossbauer spectroscopy and conversion electron Mossbauer spectroscopy at room temperature. It is found that the nanowire arrays have obvious perpendicular magnetic anisotropy, and are ferromagnetic at room temperature, with its Mossbauer spectra consisting of six broad lines. The average angles between the Fe and 28° at the end of the amorphous Fe89.7P10.3 alloy magnetic moment and the wire axis are about 14°inside nanowire arrays, respectively. The magnetic behaviour is decided by the shape anisotropy and the dipolar interaction between wires. In addition, the magnetic moments distribution is theoretically demonstrated by using the symmetric fanning mechanism of the spheres chain model.     

One-dimensional single (In,Ga)As quantum dot arrays formed by self-organized anisotropic strain engineering

Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed on planar singular GaAs (1 0 0) in molecular beam epitaxy by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template. The distinct stages of template formation, which govern the uniformity of the QD arrays, are directly imaged by atomic force microscopy (AFM). The AFM results reveal that excess strain accumulation causes fluctuations of the QWR template and the QD arrays. By reducing the amount of (In,Ga)As and increasing the GaAs separation layer thickness in each SL period, the uniformity of the QD arrays dramatically improves. The single QD arrays are straight over more than 1 μm and extended to 10 μm length. Capped QD arrays show clear photoluminescence emission up to room temperature.     

Electronic transmission through a quantum wire by side-attached nanowires

A system of arrays of nanowires side-coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. An analytical expression of the conductance at zero temperature is given, showing a band with alternating forbidden and allowed minibands due to the discrete structure of the nanowires. A generalization of the odd–even parity symmetry is found in this system, whose conductance exhibits a forbidden miniband in the center of the band for an odd number of sites in the nanowires, while shows an allowed band for an even number.     

多层膜线列阵的巨磁电阻和层间耦合

研究了Fe/［NiFe/Cu］₃₀多层膜线列阵的室温磁电阻和磁滞特性，列阵的线密度为250和500线/mm，采用激光全息光刻和离子束刻蚀技术制成.线列阵样品的磁性与刻线加工前的连续膜有明显区别.最大巨磁电阻率有增也有减，最大增量为3.32%.外场平行线轴的矫顽力有的增加有的不变.这除了因为原始连续膜层间耦合态有差异之外，还与由线列阵加工引入的单轴各向异性和其它变化相关. 关键词：     

Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications

We describe fabrication methods of GaAs and InAs quantum dot (QD) structures and related semiconductor nanostructures having nanoscale heterointerfaces grown by the selective area metalorganic vapor-phase epitaxial (SA-MOVPE) method on partially masked GaAs substrates. GaAs QD arrays and wire–dot coupled structures having strong lateral confinement were fabricated on appropriately designed masked substrates. InAs QDs were also formed on various kinds of GaAs pyramidal and wire structures, where site-selective formation is demonstrated by the combination of self-assembling growth mode and selective area growth. The application of QDs to single-electron transistors using SA-MOVPE is also described.     

Fabrication and optical properties of quantum dots and wires

We describe photoluminescence measurements made on mesa geometry quantum dots and wires with exposed side walls fabricated by laterally patterning undoped GaAs/AlGaAs quantum wells using electron beam lithography and dry etching. At low temperature the photoluminescence efficiency of many but not all of the GaAs quantum dot arrays scales with the volume of quantum well material down to lateral dimensions of 50nm. This behaviour contrasts with that found in wires produced at the same time where the intensity falls off rapidly with decreasing wire width for dimensions below 500nm but is recovered by overgrowth with indium tin oxide, possibly as a result of strain. Narrow overgrown wires exhibit anisotropy in polarized excitation spectra which is discussed in relation to strain and lateral confinement effects.     

Negative Coulomb drag in coupled wire and quantum dot system

We measure the Coulomb drag between parallel split-gate quantum wires with a quantum dot embedded in one of the two wires (drive wire). We observe negative Coulomb drag when a Coulomb oscillation peak appears in the drive wire and the conductance of the other wire (drag wire) is slightly below the first plateau. This indicates that correlation holes are dragged in the drag wire by single electron tunneling through the quantum dot in the drive wire. The drag is only promoted in the drag wire near the barrier regions of the dot, and low compressibility of the drag wire is necessary for the negative drag to occur.     

Single quantum dots as scanning tunneling microscope tips

We report the use of single quantum dot structures as tips on a scanning tunneling microscope (STM). A single quantum dot structure with a diameter of less than 200 nm and a height of 2 μm was fabricated by reactive ion etching. This dot was placed on a 40 μm-high mesa and mounted on the tip of a STM. The topography of large structures such as quantum wires or gold test substrates is clearly resolved with such a tip. To check the transport properties of the tip, quantum dot arrays were fabricated on resonant tunneling double barrier structures using the same process parameters. Conventional tunneling spectroscopy clearly resolved the 0D states in our samples. Using a metal substrate as second electrode such STM tips can be used to perform high resolution energy spectroscopy on single dots and free standing wire structures.     

Fe/[NiFe/Cu]30多层膜线列阵的铁磁共振研究

用铁磁共振(FMR)技术研究Fe/［NiFe/Cu］₃₀多层膜线列阵的特性,线列阵采用激光全息光刻和离子束刻蚀技术加工,线密度为250线/mm和500线/mm.线列阵样品的FMR谱在稍高于主峰（声学峰）的共振场下有光学峰出现,相当层间交换耦合为反铁磁型.光学峰与声学峰的峰位间距沿易轴小于沿难轴.又,来自非磁Cu夹层的顺磁共振峰的幅度远大于原始的连续膜,说明线列阵加工致使层结构退化. 关键词：     

表面绝缘对平面钨丝阵Z箍缩早期过程的影响

在"强光一号"装置上研究了表面绝缘对平面钨丝阵早期过程的影响。通过对实验结果的唯象分析,发现相对于标准丝阵,表面绝缘丝阵X射线辐射被强烈延迟,并与丝阵宽度有较强的依赖关系,在X射线辐射之前存在较强的阴极发射;表面绝缘丝阵X射线辐射副脉冲幅值是标准丝阵两倍,且存在较长的平台期,其单丝等离子体膨胀导致的温度降低效应比标准丝阵强;在快速内爆开始之前,两者形成了类似的宏观磁流体不稳定性结构。     

Scattering of surface states at step edges in nanostripe arrays

Surface states of noble metal surfaces split into Ag-like and Cu-like subbands in stepped Ag/Cu nanostripe arrays. The latter self-assemble by depositing Ag on vicinal Cu(111). Ag-like states scatter at nude step edges in Ag stripes, leading to umklapp bands, quantum size effects, and peak broadening. By contrast, Ag stripe boundaries become transparent to Cu-like states, which display band dispersion as in flat Cu(111). We find a linear relationship between the quantum size shift and peak broadening that applies in a variety of stepped systems, revealing the complex nature of step barrier potentials.