射频磁控溅射法制备SnO2:Sb薄膜的结构和光致发光性质研究

采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡（SnO2₂:Sb）薄膜.制 备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄，晶粒生长的择优取向为［110］.室温下光致发光测量结果表明，在392nm附近存在强的紫外-紫光发射.研究了不同氧分压对薄膜结构及发光性质的影响，并对SnO2₂:Sb的光致发光机制进行了探索性研究.     

非晶SnO2：(Cu，In)薄膜的荧光特性及带尾态

用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO₂：(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220—1100nm范围的透过率,得到的带隙宽度E^opt_g=4.645eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276—550nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术，分别沉积Ti和Ti/Al膜，经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序，分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法，在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构，当薄膜厚度约为30 nm时，薄膜为单一择优取向；当薄膜厚度约为100nm时，薄膜呈多晶结构.原子力显微镜(AFM)分析表明，当膜厚为30nm时，薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄     

CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO₂:F薄膜衬底上制备未掺杂的SnO₂薄膜形成过渡层,并将其在N₂/O₂=4 ∶1,550 ℃环境进行了30 min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复     

MgB2超导薄膜的微波测量

报道了利用蓝宝石介质谐振器技术测量MgB₂超导薄膜的微波表面电阻R_{s、0K时的穿透深度λ(0)和超导能隙Δ(0).λ(0)和Δ(0)的值是通过先测量样品穿透深度λ(T)的变化量Δλ(T)，然后由BCS理论模型拟合Δλ(T)的实验数据得到的.测试样 品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜， 薄膜的超导转变温度和转变宽度分别为38K和01K.微波测试结果表明在10K，18GHz下M gB2薄膜的Rs约为100μΩ，可以和高质量的YBCO薄膜的Rs值相比拟；BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm，Δ(0)=113k Tc.}     

Sb掺和对TeOx薄膜光学和静态记录特性的影响

以真空蒸镀法在K9玻璃基底上制备了TeO_x:Sb单层薄膜,对薄膜的结构、光学和静态记录特性进行了研究.结果表明,Sb掺和后TeO_x薄膜的结构、反射光谱和光学常量均发生了明显变化.TeO_x:Sb薄膜具有良好的写入灵敏性并具有了一定的可擦除性能,该类薄膜有望作为可擦除光存储介质.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

使用金属掺杂SnO2(110)作为表面催化剂的电催化CO2还原反应：通过调控Sn:O原子比例来控制产物

电催化CO₂还原反应可以产生HCOOH和CO,目前该反应是将可再生电力转化为化学能存储在燃料中的最有前景的方法之一. SnO₂作为将CO₂转换为HCOOH和CO的良好催化剂,其反应发生的晶面可以是不同的. 其中(110)面的SnO₂非常稳定,易于合成. 通过改变SnO₂(110)的Sn:O原子比例,得到了两种典型的SnO₂薄膜：完全氧化型(符合化学计量)和部分还原型. 本文研究了不同金属(Fe、Co、Ni、Cu、Ru、Rh、Pd、Ag、Os、Ir、Pt和Au)掺杂的SnO₂(110),发现在CO₂还原反应中这些材料的催化活性和选择性是不同的. 所有这些变化都可以通过调控(110)表面中Sn:O原子的比例来控制. 结果表明,化学计量型和部分还原型Cu/Ag掺杂的SnO₂(110)对CO₂还原反应具有不同的选择性. 具体而言,化学计量型的Cu/Ag掺杂的SnO₂(110)倾向于产生CO(g),而部分还原型的表面倾向于产生HCOOH(g). 此外,本文还考虑了CO₂还原的竞争析氢反应. 其中Ru、Rh、Pd、Os、Ir和Pt掺杂的SnO₂(110)催化剂对析氢反应具有较高的活性,其他催化剂对CO₂还原反应具有良好的催化作用.     

用SCLC法研究低k多孔SiO2:F薄膜的隙态密度

用溶胶-凝胶法制备了低k多孔SiO₂:F薄膜，用空间电荷限制电流法(SCLC)研究了多孔SiO₂:F薄膜中的隙态密度以及掺F量对隙态密度的影响，得到了平衡费米能级附近的隙态密度约为7×10¹⁵cm^-3·eV^-1，以及带隙中隙态随能量的分布. 并对造成隙态的主要原因也进行了讨论.     

Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

SnO₂ thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO₂, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er³⁺ ions was found to be enhanced after doping SnO₂ with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc.     

Stimulated emission from trapped excitons in SnO2 nanowires

The pump fluence dependent photoluminescence (PL) spectra of SnO₂ nanowires were investigated, which were synthesized with a high-temperature chemical reduction method. The integrated intensity of the narrower peak at 3.2 eV experiences a strong superlinear dependence on the pump fluence, and the narrowest width of the sharp peak is only 19 meV. Moreover, under high excitation fluence, an ultrafast decay time (less than 20 ps) appears in the time-resolved PL spectra. The emission of these SnO₂ nanowires shows strong apparent stimulated emission behaviors although the SnO₂ is a dipole forbidden direct gap semiconductor. The stimulated emission should relate to the localized islands on the surface of nanowire, which was observed through the high resolution transmission electron microscopy (HRTEM) image. The giant-oscillator-strength effect of bound exciton generated from the localized islands was considered to induce the stimulated emission of SnO₂ nanowires.     

Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

The Antimony-doped tin oxide (SnO₂:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO₂ and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb₂O₃ phase and Sb₂O₅ phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO₂:Sb films are investigated in detail and corresponding PL mechanism is discussed.     

Structure, microstructure and photoluminescence properties of Fe doped SnO2 thin films

In this paper, effects of Fe doping on crystallinity, microstructure and photoluminescence (PL) properties of sol-gel derived SnO₂ thin films are reported. It is shown that doping of Fe³⁺ ions leads to crystallite size reduction and higher strain in SnO₂ thin films. The room temperature PL spectra show marked changes in intensity and blue-shift of the emission lines upon Fe doping. These observations have been correlated with structural changes and defect chemistry of Fe doped SnO₂ thin films.     

Study of ZnO-coated SnO2 nanostructures synthesized by a two-step process

We investigated the influence of the ZnO coating on the properties of one-dimensional (1D) nanostructures of SnO₂. We have employed X-ray diffraction, scanning electron microscope, transmission electron microscope and photoluminescence (PL) spectroscopy to characterize both as-synthesized and ZnO-coated products. We observed that deposition process of ZnO by using an atomic layer deposition technique resulted in the SnO₂ core/ZnO shell structure. The photoluminescence of the ZnO-coated products exhibited broad bands in the UV and green region, suggesting a possible contribution of the emission from the ZnO outlayers.     

Optical study of Sr2SnO4:Eu phosphor

This work presents the influence of europium dopant on optical properties of Sr₂SnO₄:Eu³⁺ powders fabricated by a facile low temperature method. Powders were obtained from the same amounts of Eu³⁺ doping into the different concentrations of Sr(NO₃)₂. Powders were examined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). SEM measurements different Eu concentrations in fabricated powders was determined to found different morphologies. XRD analysis revealed the existence of crystalline Sr₂SnO₄ in the form of tetragonal and the diffraction intensity was remarkably changed. PL studies showed a red luminescence of Sr₂SnO₄:Eu³⁺ powders. The intensity of luminescence increased with better crystallinity. This approach provides economically viable route for large-scale synthesis of this kind of nanopowders.     

Hydrothermal synthesis and optical characteristics of Eu in Zn2SnO4 nanocrystals

Zn₂SnO₄:Eu³⁺ nanocrystals were one-step synthesized by hydrothermal method for the first time. All the products were systematically characterized by powder X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), electron probe X-ray microanalyzer (EPMA), photoluminescence (PL) and photoluminescent excitation (PLE). The characteristic peak of Eu³⁺-doped in Zn₂SnO₄ nanocrystals was also detected. The luminescent properties of blank and Eu³⁺-doped Zn₂SnO₄ nanocrystals were reported.     

Optical parameters in SnO2 nanocrystalline textured films grown on p-InSb (111) substrates

Spectroscopic ellipsometry and photoluminescence (PL) measurements on SnO₂ nanocrystalline textured films grown on p-InSb (111) substrates by using radio-frequency magnetron sputtering at low temperature were carried out to investigate the dependence of the optical parameters on the SnO₂ thin film thickness. As the SnO₂ film thickness increases, while the energy gap of the SnO₂ film decreases, its refractive index increases. The PL spectra show that the broad peaks corresponding to the donor-acceptor pair transitions are dominant and that the peak positions change with the SnO₂ film thickness. These results can help improve understanding for the application of SnO₂ nanocrystalline thin films grown on p-InSb (111) substrates in potential optoelectronic devices based on InSb substrates.     

The influence of nickel dopant on the microstructure and optical properties of SnO2 nano-powders

The microstructure and optical properties of Ni-doped SnO2 nano-powders are studied in detail. By Ni-doping, not only the grain size reduces, but also the grain shape changes from nano-rods to spherical particles. The crystallization becomes better with annealing temperature increasing. The band gap energy decreases as nickel doping level increases. The sp-d hybridization and alloying effect due to amorphous SnO2-x phase should be responsible for the band gap narrowing effect. Nickel dopant does not change the photoluminescence （PL） peak positions.     

Substrate effects on the oxygen gas sensing properties of SnO2/TiO2 thin films

In this study, SnO₂/TiO₂ thin films are fabricated on SiO₂/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO₂/Si substrates. Therefore, the results suggest that SiO₂/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO₂/TiO₂ films.