磁性隧道结Ni80Fe20/Al2O3/Co的研究

用等离子体氧化形成中间绝缘层的方法可重复制备出具有隧道磁电阻（TMR)效应的Ni₈₀Fe₂₀/Al₂O₃/Co磁性隧道结.光透射谱等实验结果表明等离子体氧化能可控制地制备较致密的Al₂O₃绝缘层.样品的TMR比值在室温下最高可达6.0％,反转场可低于800A/m,相应的平台宽度约为2400A/m.结电阻R_j的变化范围从百欧到几百千欧,并且TMR比值随零磁场结偏压增大单调减小. 关键词：     

双合成反铁磁结构及其对自旋阀巨磁电阻效应的影响

用直流磁控溅射方法制备了双合成反铁磁结构Co₉₀Fe₁₀(5 nm)/Ru(x nm)/Co₉₀Fe₁₀(3 nm)/Ru(y nm)/Co₉₀Fe₁₀(5 nm)(x=0.45,0.45,1.00; y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究 关键词： 双合成反铁磁 自旋阀 巨磁电阻     

成分调制的La1－xSrxMnO3复合隧道结

利用磁控溅射和Sr成分的调制以及原位热处理方法，在10mm×10mm大小的(001) 取向SrTiO_３单晶衬底上制备出三明治结构为La_0.7Sr_0.3MnO３(100nm)/La_0.96Sr_0.04MnO_３ (5nm)/ La0.7Sr_0.3MnO_３ (100nm) 的隧道结外延薄膜，然后再次 利用磁控溅射方法，在三层单晶膜上方继续沉积Ir_２２Mn_７８(15n m)/Ni_７９Fe_２１(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝 光和Ar离子束刻蚀等微加工技术，制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形L a_１-xSr_xMnO_３成分调制的复合磁性隧道结.在4.2K和 外加磁场8 T的测试下，La_１-xSr_xMnO_３成分调制的复 合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%, 直接从实验上证实了铁磁性La_{0.7Sr0.3MnO３金属氧化物的自旋极化率（97%）可接近100％，具 有很好的半金属性质. 关键词： １-x}Sr_xMnO_３')" href="#">La_１-xSr_xMnO_３ 半金属 成分调制 复合磁性隧道 结 隧穿磁电阻     

双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用

利用磁控溅射方法沉积双势垒磁性隧道结多层膜, 其中Al-O势垒层由等离子体氧化1 nm厚的 金属铝膜方式制备，然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为 6和3 μm大小的椭圆形双势垒磁性隧道结（DBMTJ），并在室温和低温下对其自旋电子输运 特性进行了研究. DBMTJ的隧穿磁电阻(TMR)比值在室温和42 K分别达到27％和423％， 结电阻分别为136 kΩ·μm²和175 kΩ·μm²，并在实验中观 察到平行状 态下存在低电阻态及共振隧穿效应，反平行态下呈现高电阻态以及TMR随外加偏压或直流电 流的增加而发生振荡现象. 由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶 体管. 关键词： 双势垒磁性隧道结 隧穿磁电阻 共振隧穿效应 自旋晶体管     

利用金属掩模法制备钉扎型磁性隧道结

利用金属掩模法和Ir22Mn78合金反铁磁钉扎层，制备了四种钉扎型的Py/Al2O3/Py，Py/Al2O3/Co，Co/Al2O3/Py和Co/Al2O3/Co磁性隧道结，坡莫合金的成分为Py＝Ni79Fe21.例如：利用狭缝宽度为100?μm的金属掩模，直接制备出室温隧穿磁电阻比值为17.2%的磁性隧道结Co/Al2O3/Co，其结电阻为76Ω,结电阻和结面积的积矢为76×10_{4Ωμm2，自由层的偏转场为1114?A/m，并且在外加磁场0.1114A·m-1之间时室温磁电阻比值 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 金属掩模}     

Fe/Al2O3/Fe隧道结特性分析

用离子束溅射方法制备磁性隧道结(MTJ). 研究MTJ样品的隧道结磁电阻(TMR)效应.用X射线 光电子能谱分析了MTJ的软、硬磁层和非磁层及其界面的化学组成与微结构.研究了MTJ的微 结构对氧化铝势垒高度与有效宽度和TMR效应的影响. 关键词： 磁性隧道结 X射线光电子能谱 隧道结磁电阻     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

用磁控溅射方法制备了两个具有不同Fe层厚度的［Ni₈₀Co₂₀(L)/Fe(t_Fe)］_N多层膜系列样品,其中t_Fe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni₈₀Co₂₀层厚度L的变化关系.在退火态［Ni₈₀Co₂₀(L)/Fe(0.1nm)］_N系列样品中,发现各向异性磁电阻( 关键词： 多层膜 各向异性磁电阻 界面效应 退火     

NiFeNb种子层对坡莫合金磁滞回线的影响

以NiFeNb为种子层，制备(Ni₇₉Fe₂₁)_1-xNb_{x(5nm)/(Ni79Fe21) (20nm)/Ta(3nm)系列膜，并对其颗粒大小、 磁滞回线及表面粗糙度等进行测量，探讨种子层中Nb含量x对坡莫合金磁滞回线的影响.结果 表明，以NiFeNb作种子层能更好地改善坡莫合金的微结构. Nb含量为23％时的磁滞回线有最 小的最大磁能积、矫顽力.种子层影响坡莫合金磁滞回线的一个重要原因是脱附激活能等因 素造成种子层具有不同的表面粗糙度，进而使坡莫合金具有不同的微结构和磁性能. 关键词： NiFeNb种子层 坡莫合金 磁滞回线 粗糙度}     

真空退火对Ni80Fe20/Cu多层膜微结构的影响

用直流磁控溅射法在Si(001)衬底上制备了以Ta为缓冲层、含有15周期的Ni₈₀Fe₂₀（4nm)/Cu(6nm)多层膜.样品分别在150,250,350℃进行了真空退火处理.用低角和高角X射线衍射法研究了多层膜的微结构.结果表明,所有样品均有较好的[111] 取向,而且随退火温度或时间的增加,[111]取向程度变得更高.超晶格周期、平均面间距在退火后略有减小,表明多层膜结构在退火后变得更为致密.多层膜界面粗糙度随退火温度或时间的增加而增大,平均相关长度随退火温度或时间的增加而减小,分析认为这是由于Ni₈₀Fe₂₀/Cu界面存在严重的互扩散所导致的.模拟Ni₈₀Fe₂₀/Cu多层膜高角X射线衍射谱,发现在Ni₈₀Fe₂₀/Cu蜀面有非常厚的混合层存在,而且混合层厚度随退火温度或时间的增加而增大.模拟结果还表明,随退火温度或时间的增加,Ni₈₀Fe₂₀层面间距几乎保持不变,Cu层面间距则随退火温度的增加而略有减小. 关键词：     

Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni₇₉Fe₂₁(5)/Ir₂₂Mn₇₈(12)/Co₆₀Fe₂₀B₂₀(4)/Al(1)–oxide/Co₆₀Fe₂₀B₂₀(6)/Al(1)–oxide/Co₆₀Fe₂₀B₂₀(4)/Ir₂₂Mn₇₈(12)/Ni₇₉Fe₂₁(5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nm×400 nm, 200 nm×200 nm nano-scale were prepared and their R–H, I–V characteristics were measured.     

Transmission electron microscopy of Co2(Cr1−xFex)Al sputtered films and their magnetic tunneling junctions

The microstructures of Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al sputtered films and of their magnetic tunnel junctions (MTJs) have been investigated to discuss the possible reasons for an unexpectedly low tunneling magnetoresistance (TMR). The structure of the Co₂FeAl film changed from B2 to L2₁ with increasing substrate temperature, while that of the Co₂(Cr_0.4Fe_0.6)Al film remained B2 up to 500 °C. The thermodynamically predicted phase separation was not observed in the films. The low TMR values obtained from the MTJs using the Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al films are attributed to the low-spin polarization expected from the low degree of order in these films. The TMR values depend sensitively on the interfacial structure of the tunnel junctions when the degree of order of the film is low.     

Controlling the demagnetizing field of an in-plane free layer by exchange coupling with a perpendicular multilayer

The demagnetizing field of a Co₅₀Fe₅₀ free layer in an in-planemicron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchangecoupling with a [Co₉₀Fe₁₀/Pt] _N multilayer with perpendicular magnetic anisotropy via a Ru interlayer. The perpendicularanisotropy for N = 5 is optimized for nominal CoFe and Pt thicknessof 0.4 nm and 1.0 nm, respectively. An increase of tunnel magnetoresistance (TMR) from 2%to 75% is observed in MTJs as the free layer thickness, t variesfrom 1.0 nm to 3.0 nm. A phenomenological model is developed to interpret the TMRdependence in terms of the free layer magnetization rotation from in-plane to out-of-planewith decreasing t, a consequence of interlayer exchange coupling with theperpendicular multilayer. We suggest that this strategy could significantly reduce theswitching current density in such MTJs.     

Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions

MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir₂₂Mn₇₈ or Fe₅₀Mn₅₀ (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5?t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling magnetoresistance (TMR) is given as a function of the annealing temperature for these MTJs, which shows the TMR ratio changes its sign from inverted to normal at a critical bias voltage (V_C) when an unbalanced synthetic antiferromagnetic stack CoFe/Ru/CoFeB is used. V_Cs change with the thickness of the pinned CoFeB and annealing temperature, which implies one can achieve different V_Cs by artificial control. The asymmetric V_C values suggest that a strong density-of-states modification occurs at bottom oxide/ferromagnet interface.     

Observation of single-spin transport in an island-shaped CoFeB double magnetic tunnel junction prepared by magnetron sputtering

The Co₄₀Fe₄₀B₂₀(CFB)/MgO/CFB/MgO/CFB-based multilayer was prepared by conventional magnetron sputtering and utilised in the fabrication of double magnetic tunnel junctions (DMTJs) for which the middle CFB layers were island-shaped. By analysing the magnetic property of the CFB islands with Langevin’s equation, it was possible to identify their diameters of 7.6, 8.9 and 11.0 nm; accordingly submicron-scaled DMTJs were fabricated to investigate single-spin transport phenomena. The coulomb staircase and the oscillatory tunnel magnetoresistive (TMR) were able to be observed at 6 K, where the TMR ratio was enhanced up to 60%, which is the highest value ever achieved in this structure.     

Observation of a tunneling magnetoresistance effect in magnetic tunneling junctions with a high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 electrode

A high resistance ferromagnetic oxide Fe_2⋅5Mn_0⋅5O₄ (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al-O/Ni₈₀Fe₂₀, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT.     

Acquisition of vector hysteresis loops from micro-arrays of nano-magnets

A modified scanning Kerr microscope has been used as a static Kerr magnetometer to acquire in-plane vector hysteresis loops from square Si/Ta(50 Å)/Co₈₀Fe₂₀(40 Å)/Ni₈₈Fe₁₂(108 Å)/Ta(100 Å) elements with size ranging from 123 nm to 10 μm. The nanoscale elements were arranged in square arrays of 4 μm size. The laser beam was focused to a sub-micron spot, while polarization changes were recorded with an optical bridge detector containing a beam-splitting polarizer and two quadrant photodiodes. The coercive field exhibited a non-monotonic increase from 11 Oe in the 10 μm element to 170 Oe in the 123 nm elements. Loops acquired with the field applied parallel to the easy and hard in-plane uniaxial anisotropy axes were observed to become more similar in shape as the element size decreased.     

Thermal Stability of CoFe/Cu/CoFe/IrMn Top Spin Valve

We present a study of thermal stability of the top spin valve with a structure of seed Ta （Snm）/Co75Fe25 （5 nm ） /Cu （2.5 nm） /Co75Fe25 （5 nm ） /Ir20Mn80（12 nm） /cap Ta （8 nm） deposited at room temperature by magnetron sputtering. A vibrating sample magnetometer fixed with a heater was used to record the magnetic hysteresis loops at variational temperatures and x-ray diffraction was performed to characterize the structure of the multilayer. The exchange field Hex and the coercivity of the pinned CoFe layer Hop decrease monotonically with increasing temperature. The coercivity of the free CoFe layer Hcf in the spin valve shows a maximum at 498K. The temperature dependences of Hex, Hop and Hcf have also been discussed.