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利用金属掩模法优化了制备磁性隧道结的实验和工艺条件,金属掩模的狭缝宽度为100 μm. 采用4 nm厚的Co75Fe25为铁磁电极和10或08 nm厚的铝氧化物 为势垒膜, 直接制备出了室温隧穿磁电阻(TMR)为30%—48%的磁性隧道结,其结构为Ta(5 nm)/Cu(25 nm)/Ni79Fe21(5 nm)/Ir22Mn78(10 nm)/ Co75Fe25 (4 nm)/Al(08 nm)-O/Co75Fe25(4 nm)/Ni79Fe 21(20 nm)/Ta(5 nm).同时,利用刻槽打孔法和去胶掀离法两种光刻技术并结合Ar离子束刻蚀及化学反应刻 蚀,制备出面积在4 μm×8 μm—20 μm×40 μm、具有室温高TMR和低电阻的高质量磁性 隧道结.300 ℃ 退火前后其室温TMR可分别达到22% 和50%.研究结果表明,采用光刻中的刻 槽打孔或去胶掀离工艺方法制备的小尺寸磁性隧道结,可用于研制磁动态随机存储器和磁读 出头及其他传感器件的磁敏单元.
关键词:
磁性隧道结
隧穿磁电阻
金属掩模法
光刻法 相似文献
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利用磁控溅射方法沉积双势垒磁性隧道结多层膜, 其中Al-O势垒层由等离子体氧化1 nm厚的 金属铝膜方式制备,然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为 6和3 μm大小的椭圆形双势垒磁性隧道结(DBMTJ),并在室温和低温下对其自旋电子输运 特性进行了研究. DBMTJ的隧穿磁电阻(TMR)比值在室温和42 K分别达到27%和423%, 结电阻分别为136 kΩ·μm2和175 kΩ·μm2,并在实验中观 察到平行状 态下存在低电阻态及共振隧穿效应,反平行态下呈现高电阻态以及TMR随外加偏压或直流电 流的增加而发生振荡现象. 由此,设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶 体管.
关键词:
双势垒磁性隧道结
隧穿磁电阻
共振隧穿效应
自旋晶体管 相似文献
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A novel demodulation method for transmission using nitrogen-vacancy-based solid-state quantum sensor 下载免费PDF全文
Ruixin Bai 《中国物理 B》2022,31(7):74203-074203
Diamond based quantum sensing is a fast-emerging field with both scientific and technological significance. The nitrogen-vacancy (NV) center, a crystal defect in diamond, has become a unique object for microwave sensing applications due to its excellent stability, long spin coherence time, and optical properties at ambient condition. In this work, we use diamond NV center as atomic receiver to demodulate on-off keying (OOK) signal transmitted in broad frequency range (2 GHz-14 GHz in a portable benchtop setup). We proposed a unique algorithm of voltage discrimination and demonstrated audio signal transceiving with fidelity above 99%. This diamond receiver is attached to the end of a tapered fiber, having all optic nature, which will find important applications in data transmission tasks under extreme conditions such as strong electromagnetic interference, high temperatures, and high corrosion. 相似文献
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