一种非连续纳米氧化层自旋阀的显微结构研究

利用高分辨电子显微学方法(HREM)研究了纳米氧化层镜面反射自旋阀多层结构Ta(35nm)Ni80Fe20(2nm)Ir17Mn83(6nm)Co90Fe10(15nm)NOL1Co90Fe10(2nm)Cu(22nm)Co90Fe10(15nm)NOL2Ta(3nm).该自旋阀的巨磁电阻(GMR)效应高达15%,较无此镜面反射纳米氧化层(NOL)的自旋阀提高近1倍,同时交换偏置场亦有所增强.高分辨显微结构分析表明,介于钉扎层与被钉扎层之间的氧化层(NOL1)并未完全氧化,即除氧化过程生成的CoFe氧化物 关键词： 自旋阀 纳米氧化层 高分辨电子显微学 巨磁电阻效应     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

Paramagnetism in Cu-doped ZnO

Zn0.98 Cu0.02 O powders are prepared by the sol-gel method.A small number of CuO impurity phases are observed by the x-ray diffraction,indicating the solubility of Cu in ZnO is less than 2 at.%.The Zn0.98 Cu0.02 O powders exhibit diamagnetism at 300 K and paramagnetism at 5 K.After subtracting the diamagnetic contribution of ZnO bulk and the paramagnetic contribution of defects,Cu ions exhibit weak paramagnetism.By codoping Cu with Co or Mn in ZnO,only paramagnetism is observed at room temperature.     

Ag/Ag3PO4/g-C3N4三元复合光催化剂的制备及其可见光驱动下的光催化活性增强

报道了一种新型Ag/Ag₃PO₄/g-C₃N₄三元复合光催化剂的制备及其半导体界面处的快速载流子分离所引起的光催化活性的显著增强效应。通过X射线衍射,扫描电子显微镜,紫外-可见吸收光谱以及光致发光光谱等就其晶体结构、形貌、组分、光学吸收以及载流子的快速分离行为进行了表征与分析。以罗丹明B作为模型化合物分子,研究发现,所制备的Ag/Ag₃PO₄/g-C₃N₄三元复合光催化剂在可见光照射下表现出比Ag₃PO₄以及Ag₃PO₄/g-C₃N₄二元催化剂更为优异的光催化活性。研究认为,Ag₃PO₄表面尺寸约为40 nm的Ag纳米粒子在可见光下受激所产生的等离子表面共振效应以及Ag₃PO₄与g-C₃N₄界面处所形成的类似异质结结构对所制备的Ag/Ag₃PO₄/g-C₃N₄三元复合光催化剂光催化活性的显著增强起到重要作用。     

高度取向石墨的巨磁电阻效应

石墨是准二维半金属材料，然而在通常细晶粒、无取向的石墨中并没有发现很大的磁电阻效应.在高度取向的石墨中发现了巨大的正磁电阻效应，在8.15 T的外磁场中，4.2，300 K温度下的磁电阻分别高达85300%和4950%.生产这一巨磁电阻效应的机制除正常磁电阻效应外，可能源于磁场诱导的类金属-绝缘体的转变 关键词： 磁电阻效应 石墨     

Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions

Anomalous transport behaviour,i.e.the dependence of the tunnel resistance on the injection current,has been discovered in Ta/Co/Al2O3/FeNi tunnel junctions.The zero-field voltage-current characteristic of the magnetic tunnelling junction obeys the transport principle of the normal tunnel junction at low injection current,but it exhibits a negative resistance behaviour when the injection current is raised to the break-over current level.The physics of the restorable electric breakdown has been initially studied.     

Magnetic-Field-Induced Semimetal-Insulator-like Transition in Highly Oriented Pyrolitic Graphite

We report the extraordinarily large positive magnetoresistances （MR, 69400% at 4.5K under a magnetic field of 8.15 T）, de Hass-van Alphen oscillations effect at 10 K and the semimetal-Jnsulator-like transition in a wide range of temperature in highly oriented pyrolitic graphite （HOPG）. Besides a dominating ordinary MR （OMR） mechanism in the free-electron mode, it is realized from qualitative analysis that the Coulomb interacting quasiparticles within graphite layers play some roles. However it is difficult to associate the transition with the simple OMR theory. In order to investigate the possible origins of the transition, further analysis is carried out. It is revealed that the magnetic-field-induced behaviour is responsible for the semimetal-insulator-like transitions in HOPG.     

Fe/Al2O3/Fe隧道结特性分析

用离子束溅射方法制备磁性隧道结(MTJ). 研究MTJ样品的隧道结磁电阻(TMR)效应.用X射线 光电子能谱分析了MTJ的软、硬磁层和非磁层及其界面的化学组成与微结构.研究了MTJ的微 结构对氧化铝势垒高度与有效宽度和TMR效应的影响. 关键词： 磁性隧道结 X射线光电子能谱 隧道结磁电阻     

Ni0.8Co0.2-SiO2颗粒膜中的Hall效应

对用离子束溅射制备的Ni_0.8Co_0.2-SiO₂颗粒膜的Hall效应进行了研究.当Ni_0.8Co_0.2合金的含量为43vol%时,在9.5×10⁵A/m的外磁场下,样品的室温Hall电阻率达6.3μΩ·cm ,高于普通磁性金属两个数量级以上,还研究了不同NiCo组分样品的电阻率与温度的关系（95—300K）,发现x＜x_c(逾渗组分)时,电阻率与-logT成正比,电阻温度系数为负;当x＜x_c时,逐渐呈现金属性;而当x≈x_c时,为过渡态.还用透射电子显微镜和振动样品磁强计等手段对样品的微结构和磁性进行了对比研究,表明金属-绝缘体颗粒膜中在逾渗阈值附近有较大的Hall效应,这与样品的微结构有密切关系. 关键词：     

退火对Co35(SiO2)65颗粒膜巨磁电阻效应的影响

采用多靶离子束溅射镀膜机制备了一系列不同退火温度的Co₃₅(SiO₂)₆₅（体积百分数）颗粒膜样品,发现样品的巨磁电阻效应随着退火温度T_a的升高而单调下降.应用磁力显微镜对样品的磁结构进行了观测,发现随着退火温度的升高,近邻的Co颗粒的磁矩倾向于平行排列,形成磁畴结构,从而导致Co₃₅(SiO₂)₆₅颗粒膜巨磁电阻效应单调下降. 关键词：