4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底

Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO2 substrate

Magnetic tunnel junctions (MTJs) with different sizes from 5μm×5μm to 15μm×60μm were fabricated on 4_inch Si/SiO_2 substrates. Their mag netoelectronic properties were investigated using the four_probe measuring system. The typical values of junction resistance_area product and tunneling mag netoresistance (TMR) ratio of the MTJs are 16 kΩμm^2and 18% respectively. The absolut eerrors of junction resistance_area product and TMR ratio are within 10% and 7% respectively for all the MTJs. All of the MTJs fabricated and measured show a good uniformity. Our experimental results show that such MTJs can be used to fabrica te the prototype demonstration devices for magnetoresistive random access memory .