基于二维材料MXene的仿神经突触忆阻器的制备和长/短时程突触可塑性的实现

兼具长时程可塑性与短时程可塑性的电子突触被认为是类脑计算系统的重要基础.将一种新型二维材料MXene应用到忆阻器中,制备了基于Cu/MXene/SiO_2/W的仿神经突触忆阻器.结果表明, Cu/MXene/SiO_2/W忆阻器成功实现了稳定的双极性模拟阻态切换,同时成功模拟了生物突触短时程可塑性的双脉冲易化功能和长时程可塑性的长期增强/抑制行为,其中双脉冲易化的易化指数与脉冲间隔时间相关. Cu/MXene/SiO_2/W忆阻器的突触仿生特性,归功于MXene辅助的Cu离子电导丝形成与破灭的类突触响应机理.由于Cu/MXene/SiO_2/W忆阻器兼具长时程可塑性与短时程可塑性,其在突触仿生电子学和类脑智能领域将会具有巨大的应用前景.     

Ferroelectric polarization reversal tuned by magnetic field in a ferroelectric BiFeO3/Nb-doped SrTiO3 heterojunction

Interfacial resistive switching of a ferroelectric semiconductor heterojunction is highly advantageous for the newly developed ferroelectric memristors. Moreover, the interfacial state in the ferroelectric semiconductor heterojunction can be gradually modified by polarization reversal, which may give rise to continuously tunable resistive switching behavior. In this work, the interfacial state of a ferroelectric BiFeO₃/Nb-doped SrTiO₃ junction was modulated by ferroelectric polarization reversal. The dynamics of surface screening charges on the BiFeO₃ layer was also investigated by surface potential measurements, and the decay of the surface potential could be speeded up by the magnetic field. Moreover, ferroelectric polarization reversal of the BiFeO₃ layer was tuned by the magnetic field. This finding could provide a method to enhance the ferroelectric and electrical properties of ferroelectric BiFeO₃ films by tuning the magnetic field.     

基于忆容器件的神经形态计算研究进展

人工智能的快速发展需要人工智能专用硬件的快速发展,受人脑存算一体、并行处理启发而构建的包含突触与神经元的神经形态计算架构,可以有效地降低人工智能中计算工作的能耗.记忆元件在神经形态计算的硬件实现中展现出巨大的应用价值;相比传统器件,用忆阻器构建突触、神经元能极大地降低计算能耗,然而在基于忆阻器构建的神经网络中,更新、读取等操作存在由忆阻电压电流造成的系统性能量损失.忆容器作为忆阻器衍生器件,被认为是实现低耗能神经网络的潜在器件,引起国内外研究者关注.本文综述了实物/仿真忆容器件及其在神经形态计算中的最新进展,主要包括目:前实物/仿真忆容器原理与特性,代表性的忆容突触、神经元及神经形态计算架构,并通过总结近年来忆容器研究所取得的成果,对当前该领域面临的挑战及未来忆容神经网络发展的重点进行总结与展望.     

忆阻器及其阻变机理研究进展

忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景.本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了展望.     

Au/PZT/BIT/p-Si异质结的制备与性能研究

采用脉冲激光沉积(PLD)工艺,制备了以Bi₄Ti₃O₁₂(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr_0.52Ti_0.48)O₃(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁 关键词： 铁电薄膜 异质结构 脉冲激光沉积(PLD)     

Recent development of studies on the mechanism of resistive memories in several metal oxides

Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performances of those resistive devices are approaching the realistic levels for production.In this paper,we review the progress of valence change type memories,including relevant work reported by our group.Both electrode engineering and in-situ transmission electron microscopy(TEM)high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect.The understanding of resistive memory mechanism is significantly important for device applications.     

Multilevel resistive switching and synaptic behaviors in MnO-based memristor

Exploring new synaptic electronic devices that combine computing and memory is a promising strategy that fundamentally approaches intelligent machines. In this study, the multilevel resistive switching and synaptic behaviors of a MnO-based device is studied. The device is composed of Al/MnO/Ni sandwich structure, has stable resistance switching characteristics, has continuous nonvolatile memory state, can be used as electrically programmable and erasable analog memory. The gradual conductance modulation is realized by changing the compliance current and the maximum scanning voltage. The Al/MnO/Ni devices successfully mimic the basic functions of synapses, including the paired-pulse facilitation, spike-rate-dependent plasticity, excitatory postsynaptic current, short-term plasticity, long-term plasticity, and sike-timing-dependent plasticity.     

Recent progress on two-dimensional neuromorphic devices and artificial neural network

Mimicking biological synapses with microelectronic devices is widely considered as the first step in hardware building artificial neuromorphic networks, which is also the basis of brain-inspired neuromorphic computing. Numerous artificial neurons and synapses making up an artificial neuromorphic network have been gained wide attention due to their powerful and efficient data processing capabilities. Recently, artificial synapses, especially memristor-type and transistor-type synapses based on multifarious two-dimensional (2D) materials have been paid much attention. The unique properties of 2D materials make devices perform well in learning ability and power efficiency when mimicking synaptic behaviors, which highlights the feasibility of 2D neuromorphic devices in constructing artificial neuromorphic networks. Herein, the basic structures and principles of biological synapses are introduced, and the definitions of synaptic behaviors in synaptic electronic devices are discussed. Then, the progress of 2D memristor-type and transistor-type neuromorphic devices involving their device architecture, neuromorphic operational mechanism, and promising applications is reviewed. Finally, the future challenges of artificial synaptic devices based on 2D materials are discussed briefly.     

基于六角氮化硼二维薄膜的忆阻器

报道了一种基于多层六角氮化硼(h-BN)二维薄膜的忆阻器件.该器件不需要电预处理过程,且具有自限流的双极性阻变行为;具有较好的抗疲劳性和较长的数据保持时间.该器件在脉冲编程条件下具有模拟转变特性,即在连续的电压脉冲下器件的电阻态能被连续地调控,使得该器件能够模仿神经网络系统中的神经突触权重变化行为.综上所述,基于多层h-BN的忆阻器具有应用在非易失性存储和神经计算中的潜力.     

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin-orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier. Therefore, the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field. Moreover, we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior. This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.     

Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromorphic systems. Electric-double-layer(EDL) transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application. Here, artificial synapses based on indium-tungsten-oxide(IWO)-based EDL transistors are proposed, and some important synaptic functions(excitatory post-synaptic current, paired-pulse facilitation,filtering) are emulated. Two types of spike-timing-dependent plasticity(Hebbian STDP and anti-Hebbian STDP) learning rules and multistore memory(sensory memory, short-term memory, and long-term memory) are also mimicked. At last, classical conditioning is successfully demonstrated. Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications.     

微秒脉冲电场下Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3陶瓷击穿过程电阻变化规律

陶瓷作为应用非常广泛的一种材料,其电击穿问题一直是研究的重点和热点.由于击穿过程涉及热、光、电多场耦合效应,目前还没有一个普适的模型能够解释陶瓷击穿问题.针对此问题进行分析,实验中采用脉冲高压发生装置击穿陶瓷,通过对陶瓷击穿过程中等效电阻的研究,揭示了PZT95/5陶瓷样品体击穿和沿面闪络形成过程的异同.结果显示,在两种击穿模式下,陶瓷样品内部均会在40 ns左右形成导电通道,陶瓷等效电阻急剧下降至10~5?量级;然后体击穿与沿面闪络的导电通道以不同的速率继续扩展;电阻减小速率与导电通道上载流子的浓度有关,二者的等效电阻以不同速率减小,直至导电通道达到稳定.     

High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

Threshold switching (TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage (0.38 V) and current (200 nA), an extremely steep slope (< 0.1 mV/dec), and a relatively large off/on ratio (> 10³). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.     

多孔未极化Pb(Zr0.95Ti0.05)O3铁电陶瓷单轴压缩力学响应与相变

通过添加造孔剂的方法制备了四种不同孔隙率未极化PZT95/5铁电陶瓷. 采用非接触式的数字散斑相关性分析(digital image correltation, DIC)全场应变光学测量技术, 对多孔未极化PZT95/5 铁电陶瓷开展了单轴压缩实验研究, 讨论了孔隙率对未极化PZT95/5铁电陶瓷的力学响应与畴变、相变行为的影响. 多孔未极化PZT95/5铁电陶瓷的单轴压缩应力-应变关系呈现出类似于泡沫或蜂窝材料的三阶段变形特征, 其变形机理主要归因于畴变和相变的共同作用, 与微孔洞塌缩过程无关. 多孔未极化PZT95/5铁电陶瓷的弹性模量、压缩强度都随着孔隙率的增加而明显降低, 而孔隙率对断裂应变的影响较小. 预制的微孔洞没有改善未极化PZT95/5铁电陶瓷材料的韧性, 这是因为单轴压缩下未极化PZT95/5铁电陶瓷的断裂机理是轴向劈裂破坏, 微孔洞对劈裂裂纹传播没有起到阻碍和分叉作用. 准静态单轴压缩下多孔未极化PZT95/5铁电陶瓷畴变和相变开始的临界应力都随着孔隙率的增大而呈线性衰减, 但相变开始的临界体积应变却不依赖孔隙率.     

基于Au/TiO_2/FTO结构忆阻器的开关特性与机理研究

采用简单的一步水热法在FTO导电玻璃上外延生长了锐钛矿TiO_2纳米线,制备了具有Au/TiO_2/FTO器件结构的锐钛矿TiO_2纳米线忆阻器,系统研究了器件的阻变开关特性和开关机理.结果表明,Au/TiO_2/FTO忆阻器具有非易失的双极性阻变开关特性.同时,在103s的时间内,器件在0.1 V的电阻开关比始终保持在20以上,表明器件具有良好的非易失性.此外,器件在低阻态时遵循欧姆导电特性,而在高阻态时则满足陷阱控制的空间电荷限制电流传导机制,同时提出了基于氧空位导电细丝形成与断开机制的阻变开关模型.研究结果表明Au/TiO_2/FTO忆阻器将是一种很有发展潜力的下一代非易失性存储器.     

Ni/HfO_2/Pt阻变单元特性与机理的研究

研究了Ni/HfO2(10 nm)/Pt存储单元的阻变特性和机理.该器件具有forming-free的性质,还表现出与以往HfO2(3 nm)基器件不同的复杂的非极性阻变特性,并且具有较大的存储窗口值(105).存储单元的低阻态阻值不随单元面积改变,符合导电细丝阻变机理的特征.采用X射线光电子能谱仪分析器件处于低阻态时的阻变层HfO2薄膜的化学组分以及元素的化学态,结果表明,Ni/HfO2/Pt阻变存储器件处于低阻态时的导电细丝是由金属Ni导电细丝和氧空位导电细丝共同形成的.     

Implementation of synaptic learning rules by TaO_x memristors embedded with silver nanoparticles

As an alternative device for neuromorphic computing to conquer von Neumann bottleneck,the memristor serving as an artificial synapse has attracted much attention.The TaO_x memristors embedded with silver nanoparticles(Ag NPs)have been fabricated to implement synaptic plasticity and to investigate the effects of Ag NPs.The TaO_x memristors with and without Ag NPs are capable of simulating synaptic plasticity(PTP,STDP,and STP to LTP),learning,and memory behaviors.The conduction of the high resistance state(HRS) is driven by Schottky-emission mechanism.The embedment of Ag NPs causes the low resistance state(LRS) conduction governed by a Poole-Frenkel emission mechanism instead of a space-charge-limited conduction(SCLC) in a pure TaO_x system,which is ascribed to the Ag NPs enhancing electric field to produce additional traps and to reduce Coulomb potential energy of bound electrons to assist electron transport.Consequently,the enhanced electric fields induced by Ag NPs increase the learning strength and learning speed of the synapses.Additionally,they also improve synaptic sensitivity to stimuli.The linearity of conductance modulation and the reproducibility of conductance are improved as well.     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Forming-free and self-compliant bipolar resistive switching is observed in Cu/TaO_x/TiN conductive bridge random access memory. Generally, Pt has been investigated as an inert electrode. However, Pt is not desirable material in current semiconductor industry for mass production. In this study, all electrodes are adapted to complementary metal-oxide-semiconductor compatible materials. The self-compliant resistive switching is achieved via usage of TiN bottom electrode. Also, dissolved Cu ions in TaO_x lead to forming-free resistive switching behavior. The resistive switching mechanism is formation and rupture of combined oxygen vacancy/metallic copper conductive filament. We propose that Cu/TaO_x/TiN is a promising candidate for a conductive bridge random access memory structure.     

Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

Synapse emulation is very important for realizing neuromorphic computing, which could overcome the energy and throughput limitations of today's computing architectures. Memristors have been extensively studied for using in nonvolatile memory storage and neuromorphic computing. In this paper, we report the fabrication of vertical sandwiched memristor device using ultrathin quasi-two-dimensional gallium oxide produced by squeegee method. The as-fabricated two-terminal memristor device exhibited the essential functions of biological synapses, such as depression and potentiation of synaptic weight, transition from short time memory to long time memory, spike-timing-dependent plasticity, and spike-rate-dependent plasticity. The synaptic weight of the memristor could be tuned by the applied voltage pulse, number,width, and frequency. We believe that the injection of the top Ag cations should play a significant role for the memristor phenomenon. The ultrathin of medium layer represents an advance to integration in vertical direction for future applications and our results provide an alternative way to fabricate synaptic devices.