基于二维材料MXene的仿神经突触忆阻器的制备和长/短时程突触可塑性的实现

兼具长时程可塑性与短时程可塑性的电子突触被认为是类脑计算系统的重要基础.将一种新型二维材料MXene应用到忆阻器中,制备了基于Cu/MXene/SiO_2/W的仿神经突触忆阻器.结果表明, Cu/MXene/SiO_2/W忆阻器成功实现了稳定的双极性模拟阻态切换,同时成功模拟了生物突触短时程可塑性的双脉冲易化功能和长时程可塑性的长期增强/抑制行为,其中双脉冲易化的易化指数与脉冲间隔时间相关. Cu/MXene/SiO_2/W忆阻器的突触仿生特性,归功于MXene辅助的Cu离子电导丝形成与破灭的类突触响应机理.由于Cu/MXene/SiO_2/W忆阻器兼具长时程可塑性与短时程可塑性,其在突触仿生电子学和类脑智能领域将会具有巨大的应用前景.     

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

A novel one-dimensional(1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field(RESURF) lateral power device fabricated on silicon on an insulator(SOI) substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.     

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.     

Analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region

By solving the 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previous experimental results, confirming the validity of the models presented here.     

碳纳米管--一种新的巨电致变形纳米智能材料

纳米机电系统的发展要求智能材料具有大的应变和功率密度，以获得优良的能量转换能力．文章介绍了作者的最新发现：在电场的作用下，碳纳米管能产生巨大电致变形；而且与传统智能材料如铁电体等相比，其体积功率密度和质量功率密度预计可分别提高3个和4个量级，是一种极具潜力的新型智能材料．     

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_on,sp) are obtained. The results indicate that the HKSD device has a higher BV and lower R_on,sp compared to the SD device and HK device.     

The coupled effects of mechanical deformation and electronic properties in carbon nanotubes

Coupled effects of mechanical and electronic behavior in single walled carbon nanotu besare investigated by using quantum mechanics and quantum molecular dynamics. It is found that external applied electric fields can cause charge polarization and significant geometric deformation in metallic and semi-metallic carbon nanotubes. The electric induced axial tension ratio can be up to 10% in the armchair tube and 8.5% in the zigzag tube. Pure external applied load has little effect on charge distribution，but indeed influences the energy gap. Tensile load leads to a narrower energy gap and compressive load increases the gap. When the CNT is tensioned under an external electric field, the effect of mechanical load on the electronic structures of the CNT becomes significant, and the applied electric field may reduce the critical mechanical tension load remarkably. Size effects are also discussed.     

轴向磁场对碳纳米管电子性质的影响

用紧束缚法研究了单壁碳纳米管在轴向磁场下费米能级附近电子性质的变化规律.研究发现：能隙随轴向磁场变化的快慢及磁致能隙峰值都与碳纳米管直径有着紧密联系；对于相同直径的碳纳米管，金属性管的磁致能隙峰值最大.具体计算了锯齿型碳纳米管费米能级附近电子态密度随轴向磁场的变化关系,发现所有碳纳米管的电子态密度和能隙变化都体现出周期性.磁场使得碳纳米管发生绝缘体-金属周期性相转变的根本原因是由于在磁场的作用下范霍夫奇异点出现分裂-移动-融合的周期性变化. 关键词： 磁场 碳纳米管 紧束缚法 范霍夫奇异点     

低维碳和氮化硼材料的物理力学研究进展

碳纳米管、石墨烯和六方氮化硼等低维材料具有优异的力学和电学性质,已经引起广泛的科学兴趣。然而由电荷、分子轨道、电子结构和自旋态构成的低维材料的局域场与力学变形、机械运动和物理化学环境等外场间往往存在强烈耦合,这导致低维材料会呈现出新颖独特的物理力学性能。论文对近年来碳纳米管、石墨烯和六方氮化硼等低维材料的力学性能、力电耦合与器件原理、表面和界面结构性能调控、层间相互作用、能量耗散和摩擦等物理力学方面的研究进展进行了简要综述,并讨论了利用低维材料多场耦合特性和结构性能关联发展新型功能器件的方法和途径,以及纳米力学和纳尺度物理力学的前沿和发展趋势。