Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

Laser-modified luminescence for optical data storage

The yearly growing quantities of dataflow create a desired requirement for advanced data storage methods. Luminescent materials, which possess adjustable parameters such as intensity, emission center, lifetime, polarization, etc., can be used to enable multi-dimensional optical data storage (ODS) with higher capacity, longer lifetime and lower energy consumption. Multiplexed storage based on luminescent materials can be easily manipulated by lasers, and has been considered as a feasible option to break through the limits of ODS density. Substantial progresses in laser-modified luminescence based ODS have been made during the past decade. In this review, we recapitulated recent advancements in laser-modified luminescence based ODS, focusing on the defect-related regulation, nucleation, dissociation, photoreduction, ablation, etc. We conclude by discussing the current challenges in laser-modified luminescence based ODS and proposing the perspectives for future development.