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Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films
Abstract:Bipolar resistive switching is studied in BiFe0.95Zn0.05O3films prepared by pulsed laser deposition on(001) SrTiO3substrate,with LaNiO3as the bottom electrode,and Pt as the top electrode.Multiple steps of resistance change are observed in the resistive switching process with a slow voltage sweep,indicating the formation/rupture of multiple conductive filaments.A resistive ratio of the high resistance state(HRS) to the low resistance state(LRS) of over three orders of magnitude is observed.Furthermore,the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS,and Ohmic in the LRS.Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure,and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.
Keywords:multiferroics  resistive switching
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