基于二维材料MXene的仿神经突触忆阻器的制备和长/短时程突触可塑性的实现

兼具长时程可塑性与短时程可塑性的电子突触被认为是类脑计算系统的重要基础.将一种新型二维材料MXene应用到忆阻器中,制备了基于Cu/MXene/SiO_2/W的仿神经突触忆阻器.结果表明, Cu/MXene/SiO_2/W忆阻器成功实现了稳定的双极性模拟阻态切换,同时成功模拟了生物突触短时程可塑性的双脉冲易化功能和长时程可塑性的长期增强/抑制行为,其中双脉冲易化的易化指数与脉冲间隔时间相关. Cu/MXene/SiO_2/W忆阻器的突触仿生特性,归功于MXene辅助的Cu离子电导丝形成与破灭的类突触响应机理.由于Cu/MXene/SiO_2/W忆阻器兼具长时程可塑性与短时程可塑性,其在突触仿生电子学和类脑智能领域将会具有巨大的应用前景.     

Influence of electric field on weak localization

The influence of an electric field on weak localization is investigated. The conductance of thin Au and Ag films is measured for different applied electric fields. The electronic temperature of the conduction electrons is directly measured by the magneto-conductance of the films. The electric field does not alter the conductance and discriminates between the theories by Altshuler et al. and Tsuzuki.     

Fabrication and investigation of ferroelectric memristors with various synaptic plasticities

In the post-Moore era, neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks. Memristors have been proposed as a key part of neuromorphic computing architectures, and can be used to emulate the synaptic plasticities of the human brain. Ferroelectric memristors represent a breakthrough for memristive devices on account of their reliable nonvolatile storage, low write/read latency and tunable conductive states. However, among the reported ferroelectric memristors, the mechanisms of resistive switching are still under debate. In addition, there needs to be more research on emulation of the brain synapses using ferroelectric memristors. Herein, Cu/PbZr_0.52Ti_0.48O₃ (PZT)/Pt ferroelectric memristors have been fabricated. The devices are able to realize the transformation from threshold switching behavior to resistive switching behavior. The synaptic plasticities, including excitatory post-synaptic current, paired-pulse facilitation, paired-pulse depression and spike time-dependent plasticity, have been mimicked by the PZT devices. Furthermore, the mechanisms of PZT devices have been investigated by first-principles calculations based on the interface barrier and conductive filament models. This work may contribute to the application of ferroelectric memristors in neuromorphic computing systems.     

Bi-directional modulation of AMPA receptor unitary conductance by synaptic activity

Background  

Knowledge of how synapses alter their efficiency of communication is central to the understanding of learning and memory. The most extensively studied forms of synaptic plasticity are long-term potentiation (LTP) and its counterpart long-term depression (LTD) of AMPA receptor-mediated synaptic transmission. In the CA1 region of the hippocampus, it has been shown that LTP often involves a rapid increase in the unitary conductance of AMPA receptor channels. However, LTP can also occur in the absence of any alteration in AMPA receptor unitary conductance. In the present study we have used whole-cell dendritic recording, failures analysis and non-stationary fluctuation analysis to investigate the mechanism of depotentiation of LTP.     

Multilevel resistive switching and synaptic behaviors in MnO-based memristor

Exploring new synaptic electronic devices that combine computing and memory is a promising strategy that fundamentally approaches intelligent machines. In this study, the multilevel resistive switching and synaptic behaviors of a MnO-based device is studied. The device is composed of Al/MnO/Ni sandwich structure, has stable resistance switching characteristics, has continuous nonvolatile memory state, can be used as electrically programmable and erasable analog memory. The gradual conductance modulation is realized by changing the compliance current and the maximum scanning voltage. The Al/MnO/Ni devices successfully mimic the basic functions of synapses, including the paired-pulse facilitation, spike-rate-dependent plasticity, excitatory postsynaptic current, short-term plasticity, long-term plasticity, and sike-timing-dependent plasticity.     

High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

Threshold switching (TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage (0.38 V) and current (200 nA), an extremely steep slope (< 0.1 mV/dec), and a relatively large off/on ratio (> 10³). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.     

一类自突触作用下神经元电路的设计和模拟

神经元在自突触作用下可以诱发各类放电活动的迁移, 神经元动作电位对电自突触的响应比较敏感. 通常用包含延迟因子和增益的反馈回路电流来刻画自突触对神经元动作电位的影响. 基于Pspice软件, 设计了包含自突触效应的神经元电路, 用以延迟反馈电路来模拟电自突触对电位的调制作用. 研究结果发现: 1)在外界刺激和电自突触回路协同作用下, 神经元电路输出信号可以呈现静息态, 尖峰放电, 簇放电状态. 2)在时变增大的外界刺激下和自突触回路驱动下, 神经元电路的输出电位序列在多种电活动模式之间(静息, 尖峰放电, 簇放电)交替出现, 其机理在于自突触回路具有记忆特性, 神经元对于不同的外界刺激可以做出不同模式的响应. 3)在给定比较大外界刺激下, 改变反馈回路的增益, 发现电路输出的序列也可以呈现不同模式交替, 即神经元对于相同的刺激可以通过自我调节自突触增益来产生不同模式的响应, 其机理可能在于回路的有效反馈, 这有助于理解突触的可塑性.     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.     

基于抑制性突触可塑性的神经元放电率自稳态机制

神经元放电率自稳态是指大脑神经网络的放电率维持在相对稳定的状态.大量实验研究发现神经元放电率自稳态是神经电活动的重要特征,并且放电率自稳态是实现神经信息处理及维持正常脑功能的基础,因此放电率自稳态的研究是神经科学领域的重要科学问题.脑神经网络是一个高度复杂的动态系统,存在大量输入扰动信号及由于动态链接导致的参数摄动,因此如何建立并维持神经元放电率自稳态及其鲁棒性仍有待深入研究.反馈神经回路是皮层神经网络的典型连接模式,抑制性突触可塑性对神经元放电率自稳态具有重要的调控作用.本文通过构建包含抑制性突触可塑性的反馈神经回路模型对神经元放电率自稳态及其鲁棒性进行计算研究.结果表明:在抑制性突触可塑性的作用下,神经元放电率可自适应地跟踪目标放电率,从而取得放电率自稳态;在有外部输入干扰和参数摄动的情况下,神经元放电率具有良好的抗扰动性能,表明放电率自稳态具有很强的鲁棒性;理论分析揭示了抑制性突触可塑性学习规则是神经元放电率自稳态的神经机制;仿真分析进一步揭示了学习率及目标放电率对放电率自稳态建立过程具有重要影响.     

1-Hexadecylamine as both reducing agent and stabilizer to synthesize Au and Ag nanoparticles and their SERS application

1-Hexadecylamine (HDA)-capped Au and Ag nanoparticles (NPs) have been successfully prepared by a one-pot solution growth method. The HDA is used as both reducing agent and stabilizer in the synthetic process is favorable for investigating the capping mechanism of Au and Ag NPs’ surface. The growth process and characterization of Au and Ag NPs are determined by Ultraviolet–visible (UV–vis) spectroscopy, transmission electron microscopy (TEM), and X-ray diffraction (XRD). Experimental results demonstrate that the HDA-capped Au and Ag NPs are highly crystalline and have good optical properties. Furthermore, surface-enhanced Raman scattering (SERS) spectra of 2-thionaphthol are obtained on the Au and Ag NPs modified glass surface, respectively, indicating that the as-synthesized noble metal NPs have potentially high sensitive optical detection application.     

A direct indication for specular reflection of conduction electrons at the vacuum boundary of metal films

Highly disordered films of Al, Cu, Ag and Au are deposited at low temperatures on top of an annealed layer of the same metal. Although two electric conductors are connected in parallel, the total conductance of the sandwich first decreases, then passes through a minimum, and finally increases with increasing thickness of the disordered overlayer. Such curves of the total conductance versus thickness of the second film are interpreted within the Fuchs-Sondheimer model of the geometrical size effect. This model is used to calculate the fraction of specularly scattered conduction electrons at the uncovered surface, and the mean free path of the conduction electrons in the quench condensed overlayer.     

Dielectric Loss Suppression of Silver/Poly(vinylidene fluoride) Composite Films with Polydopamine

The preparation and dielectric properties of silver-polydopamine/poly(vinylidene fluoride) (Ag-PDOP/PVDF) composite films with suppressed dielectric loss are reported. The dielectric loss tangents of the composite films were found to be rather low similar to that of pure PVDF over the frequency range 100 Hz to 30 kHz, almost regardless of the Ag content, and even lower than that of pristine PVDF in the relatively high frequency region. The nanoscale structure comprised of Ag nanoparticles (Ag NPs), isolated by the PDOP coating and the PVDF matrix, hindered the formation of percolative networks, resulting in the decreased conduction loss in the composite films, even at a high filler loading. The strong interfacial interaction between the Ag@PDOP particles and the PVDF matrix also contributed to the restrained interfacial loss. Consequently, these composite films had higher permittivity and smaller dielectric loss than the PVDF matrix at relatively high frequencies, and would thus be attractive for physically small capacitor applications in electronics and electric power systems.     

Excimer laser photofragmentation of metallic nanoparticles

Copper nanoparticles (Cu NPs) were prepared by different chemical methods possessing different sizes. While, silver nanoparticles (Ag NPs) were prepared by borohydride reduction method. The influences the changes in sizes of Ag NPs and Cu NPs were demonstrated by the absorption spectra. When Ag NPs and Cu NPs irradiated with 193 and 308 nm excimer laser, respectively; the maximum absorption decreased as the number of pulses increased up to 10 thousands pulse; due to the size reduction. The TEM photography gives good criteria about the size reduction process. Moreover, the mechanism of photofragmentation was described.     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

具有感觉记忆的忆阻器模型

人类记忆的形成包括感觉记忆、短期记忆、长期记忆三个阶段,类似的记忆形成过程在不同材料忆阻器的实验研究中有过多次报道.这类忆阻器的记忆形成过程存在有、无感觉记忆的两种情况,已报道的这类忆阻器的数学模型仅能够描述无感觉记忆的忆阻器.本文在已有模型的基础上,根据有感觉记忆的忆阻器的研究文献中所报道的实验现象,设计了具有感觉记忆的忆阻器模型.对所设计模型的仿真分析验证了该模型对于存在感觉记忆的这类忆阻器特性的描述能力:对忆阻器施加连续脉冲激励,在初始若干脉冲作用时忆阻器无明显的记忆形成,此时忆阻器处于感觉记忆阶段,后续的脉冲作用下忆阻器将逐渐形成短期、长期记忆,并且所施加脉冲的幅值越大、宽度越大、间隔越小,则感觉记忆阶段所经历的脉冲数量越少.模型状态变量的物理意义可用连通两电极的导电通道在外加电压作用下的形成与消失来给出解释.     

Synthesis and characterization of silver/lithium cobalt oxide (Ag/LiCoO2) nanofibers via sol–gel electrospinning

We report on the preparation and characterization of Ag/LiCoO₂ nanofibers (NFs) via the sol–gel electrospinning (ES) technique. Ag nanoparticles (NPs) were produced in an aqueous polyvinyl pyrrolidone (PVP) solution by using AgNO₃ precursor. A viscous lithium acetate/cobalt acetate/polyvinylalcohol/water (LiAc/(CoAc)₂/PVA/water) solution was prepared separately. A Ag NPs/PVP/water solution was prepared and added to this viscous solution and magnetically stirred to obtain the final homogeneous electrospinning solution. After establishing the proper electrospinning conditions, as-spun precursor Ag/LiAc/Co(Ac)₂/PVA/PVP NFs were formed and calcined in air at a temperature of 600 °C for 3 h to form well-crystallized porous Ag/LiCoO₂ NFs. Various analytical characterization techniques such as UV–vis, SEM, TEM, TGA, XRD, and XPS were performed to analyze Ag NPs, as-spun and calcined NFs. It was established that Ag NPs in the precursor Ag/LiAc/Co(Ac)₂/PVA/PVP NFs are highly self-aligned as a result of the behavior of Ag in the electric field of the electrospinning setup and the interaction of Ag ions with Li and Co ions in the NF. Ag/LiCoO₂ NFs exhibit a nanoporous structure compared with un-doped LiCoO₂ NFs because the atomic radius of Ag is larger than the radius of Co and Li ion; thus, no substitution between Ag and Li or Ag and Co atoms occurs, and Ag NPs are located at the interlayer of LiCoO₂ while some are left in the fiber.     

Exponential ionic drift: fast switching and low volatility of thin-film memristors

We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulation results explain the very large ratios for the state lifetime to switching speed experimentally observed in devices for which resistance switching is due to ion migration. Given the activation barriers of the drifting species, it is possible to predict the volatility and switching time for various material systems.     

Facile synthesis of SERS active Ag nanoparticles in the presence of tri-n-octylphosphine sulfide

A facile and novel way was reported here for the synthesis of hydrophobic Ag nanoparticles (NPs), using AgNO₃, tri-n-octylphosphine (TOP) and sulfur (S) powder in process. TOP was used as solvent, reducing agent and stabilizer. S could chelate with excessive TOP to form trioctylphosphine sulfide (TOPS), which served as second capping agent. The hydrophobic Ag NPs could be transformed into hydrophilic state through ligand exchange. Furthermore, surface-enhanced Raman scattering (SERS) spectra of 4-aminothiophenol (4-ATP) were obtained on the hydrophobic and hydrophilic Ag NPs modified substrates, indicating that the as-synthesized Ag NPs had great potential for high sensitive optical detection applications.     

Silver nanoparticles generated by pulsed laser ablation in supercritical CO2 medium

Pulsed laser ablation (PLA) has been widely employed in industrial and biological applications and in other fields. The environmental conditions in which PLA is conducted are important parameters that affect both the solid particle cloud and the deposition produced by the plume. In this work, the generation of nanoparticles (NPs) has been developed by performing PLA of silver (Ag) plates in a supercritical CO₂ medium. Ag NPs were successfully generated by allowing the selective generation of clusters. Laser ablation was performed with an excitation wavelength of 532 nm under various pressures and temperatures of CO₂ medium. On the basis of the experimental result, both surface of the irradiated Ag plate and structure of Ag NPs were significantly affected by the changes in supercritical CO₂ pressure and temperature. With increasing irradiation pressure, plume deposited in the surrounding crater created by the ablation was clearly observed. In Field Emission Scanning Electron Microscopy (FE-SEM) the image of the generated Ag NPs on the silicon wafer and the morphology of Ag particles were basically a sphere-like structure. Ag particles contain NPs with large-varied diameter ranging from 5 nm to 1.2 μm. The bigger Ag NPs melted during the ablation process and then ejected smaller spherical Ag NPs, which formed nanoclusters attached on the molten Ag NPs. The smaller Ag NPs were also formed around the bigger Ag NPs. Based on the results, this new method can also be used to obtain advanced nano-structured materials.     

Reduction of silver nanoparticles onto graphene oxide nanosheets with <Emphasis Type="Italic">N</Emphasis>,<Emphasis Type="Italic">N</Emphasis>-dimethylformamide and SERS activities of GO/Ag composites

Silver nanoparticles (Ag NPs) have been homogeneously deposited onto graphene oxide (GO) nanosheets by an optimal method, in which N,N-dimethylformamide (DMF) as a co-dispersant of GO and reductant of sliver ions is added to an aqueous suspension of GO and AgNO₃. GO nanosheets are uniformly covered by Ag NPs with a narrow size distribution and inter-particle gap. Raman signals of GO are greatly enhanced after deposition owing to the charge transfer interaction of GO with Ag NPs. The GO/Ag composite can be further utilized as an effective surface-enhanced Raman scattering (SERS) active substrate. Several new Raman bands and frequency shifts are clearly observed in using 4-aminothiophenol (4-ATP) as a Raman probe on GO/Ag compared to the normal Raman spectrum of solid 4-ATP. The Raman enhancement arises from a major electromagnetic effect and a minor chemical effect.