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基于二维材料MXene的仿神经突触忆阻器的制备和长/短时程突触可塑性的实现
引用本文:陈义豪,徐威,王钰琪,万相,李岳峰,梁定康,陆立群,刘鑫伟,连晓娟,胡二涛,郭宇锋,许剑光,童祎,肖建.基于二维材料MXene的仿神经突触忆阻器的制备和长/短时程突触可塑性的实现[J].物理学报,2019,68(9):98501-098501.
作者姓名:陈义豪  徐威  王钰琪  万相  李岳峰  梁定康  陆立群  刘鑫伟  连晓娟  胡二涛  郭宇锋  许剑光  童祎  肖建
作者单位:1. 南京邮电大学电子与光学工程学院, 南京 210023; 2. 盐城工学院材料科学与工程学院, 盐城 224051
基金项目:国家自然科学基金(批准号: 61704088, 61874059)、中国博士后科学基金(批准号: 2018M642290)、射频集成和微组装技术国家地方联合工程实验室开放课题(批准号: KFJJ20170101)、江苏省教育厅省级重点人才项目(批准号: SZDG2018007, TJ218001)和南京邮电大学基金(批准号: NY217116)资助的课题.
摘    要:兼具长时程可塑性与短时程可塑性的电子突触被认为是类脑计算系统的重要基础.将一种新型二维材料MXene应用到忆阻器中,制备了基于Cu/MXene/SiO_2/W的仿神经突触忆阻器.结果表明, Cu/MXene/SiO_2/W忆阻器成功实现了稳定的双极性模拟阻态切换,同时成功模拟了生物突触短时程可塑性的双脉冲易化功能和长时程可塑性的长期增强/抑制行为,其中双脉冲易化的易化指数与脉冲间隔时间相关. Cu/MXene/SiO_2/W忆阻器的突触仿生特性,归功于MXene辅助的Cu离子电导丝形成与破灭的类突触响应机理.由于Cu/MXene/SiO_2/W忆阻器兼具长时程可塑性与短时程可塑性,其在突触仿生电子学和类脑智能领域将会具有巨大的应用前景.

关 键 词:MXene  忆阻器  离子扩散  突触可塑性
收稿时间:2018-12-29

Fabrication of synaptic memristor based on two-dimensional material MXene and realization of both long-term and short-term plasticity
Chen Yi-Hao,Xu Wei,Wang Yu-Qi,Wan Xiang,Li Yue-Feng,Liang Ding-Kang,Lu Li-Qun,Liu Xin-Wei,Lian Xiao-Juan,Hu Er-Tao,Guo Yu-Feng,Xu Jian-Guang,Tong Yi,Xiao Jian.Fabrication of synaptic memristor based on two-dimensional material MXene and realization of both long-term and short-term plasticity[J].Acta Physica Sinica,2019,68(9):98501-098501.
Authors:Chen Yi-Hao  Xu Wei  Wang Yu-Qi  Wan Xiang  Li Yue-Feng  Liang Ding-Kang  Lu Li-Qun  Liu Xin-Wei  Lian Xiao-Juan  Hu Er-Tao  Guo Yu-Feng  Xu Jian-Guang  Tong Yi  Xiao Jian
Institution:1. College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; 2. School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng 224051, China
Abstract:Compared with conventional computation relying on the von Neumann architecture, brain-inspired computing has shown superior strength in various cognitive tasks. It has been generally accepted that information in the brain is represented and formed by vastly interconnected synapses. So the physical implementation of electronic synaptic devices is crucial to the development of brain-based computing systems. Among a large number of electronic synaptic devices, the memristors have attracted significant attention due to its simple structure and similarities to biological synapses. In this work, we first use two-dimensional material MXene as a resistive material and fabricate an electronic synapse based on a Cu/MXene/SiO2/W memristor. By using the unique properties of MXene, the conductance of the memristor can be modulated by the accumulation or reflux of Cu2+ at the physical switching layer, which can vividly simulate the mechanism of bio-synapses. Experimental results show that the Cu/MXene/SiO2/W memristor not only achieves stable bipolar analog resistance switching but also shows excellent long-term and short-term synaptic behaviors, including paired-pulse facilitation (PPF) and long-term potential/depression. By adjusting the pulse interval, the PPF index will change accordingly. In a biological system, the short-term plasticity is considered to be the key point for performing computational functions while the long-term plasticity is believed to underpin learning and memory functions. This work indicates that Cu/MXene/SiO2/W memristor with both long-term and short-term plasticity will have great application prospects for brain-inspired intelligence in the future.
Keywords:MXene  memristor  ion diffusion  synaptic plasticity
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