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1.
采用脉冲激光沉积(PLD)技术,利用LSCO/CeO2/YSZ多异质缓冲层,在Si(100)基 片上成功地制备了c轴一致取向的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征,考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响,确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线,表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性.
关键词:
3.15Nd0.85Ti3O12')" href="#">Bi3.15Nd0.85Ti3O12
铁电薄 膜
多层异质结
脉冲激光沉积 相似文献
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使用脉冲激光沉积技术,在LaAlO3(001)单晶基片上制备了La2/3Sr1/3MnO3(LSMO)/BaTiO3(BTO)双层薄膜.X射线衍射分析显示,LSMO层和BTO层呈现纯(001)取向.原子力显微镜研究表明,薄膜表面晶粒大小均匀,排列致密,表面均方根粗糙度为1.4 nm.复合薄膜的磁学、电学性能研究表明,其具有良好的磁学和介电性能.电输运测试显示,与在BTO层上施加正方向
关键词:
磁电效应
铁电/铁磁异质结构
脉冲激光沉积 相似文献
7.
采用脉冲激光沉积技术制备了SrTiO3和SrNb0.2Ti0.8O3薄膜.X射线衍射分析表明在LaAlO3(100)单晶平衬底上生长的SrTiO3及SrNb0.2Ti0.8O3薄膜是沿[001]取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO3薄膜的晶格参数减小,而SrNb0.2Ti0.8O3薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO3/SrNb0.2Ti0.8O3)L的最佳氧压为1.0×10-2Pa.另外在LaAlO3(100)倾斜衬底上制备的SrNb0.2Ti0.8O3薄膜中观察到激光感生热电电压效应.
关键词:
0.2Ti0.8O3薄膜')" href="#">SrNb0.2Ti0.8O3薄膜
晶格参数
激光感生热电电压
脉冲激光沉积 相似文献
8.
应用磁控溅射法以Ni-Al同时作为Cu与SiO2/Si,Cu与SRO薄膜之间的阻挡层材料,将Cu与SiO2/Si衬底和氧化物薄膜电极隔离,避免它们在高温氧气氛中发生化学反应和互扩散,实现了Cu薄膜与氧化物铁电电容器的集成.采用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了不同温度下快速退火的SrRuO3(SRO)/Ni-Al/Cu/Ni-Al/SiO2/Si含Cu异质结的微结构和表面形貌,结果发现SRO/Ni-Al/Cu/Ni-Al/SiO2/Si含Cu多层异质结薄膜在高达750 ℃仍然具有较强的Cu衍射峰和比较平整的表面,显示出了很好的高温热稳定性.研究了"室温长高温退"和"低温长高温退"两种工艺手段,发现在制备含Cu多层氧化物薄膜异质结时,低温长高温后退火的方式要优于常规的室温长高温后退火方式,通过低温长高温退工艺可以缓解应力、削弱界面粗化和避免高温生长对阻挡层和Cu薄膜结构的破坏.最后结合sol-gel法将Pb(Zr0.4Ti0.6)O3(PZT)生长在该含Cu异质结上,制备得SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO2/Si含Cu铁电电容器,研究了电容器的薄膜结构、铁电性能和漏电特性等,发现制备的含Cu铁电电容器具有很好的铁电性能,如电滞回线趋势饱和,剩余极化强度高达~42 μC/cm2,矫顽电压为~1.0 V,介电常数~1600,漏电流~1.83×10-4 A/cm2,以及良好的抗疲劳特性和保持特性等,表明导电性优良的Cu薄膜可以应用于高密度高性能铁电电容器.对其漏电机理研究表明,SRO/PZT/SRO含Cu铁电电容器满足空间电荷限制传导机理.
关键词:
Cu
PZT
铁电电容器
Ni-Al 相似文献
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利用脉冲激光沉积法成功制备了BaTiO3/p-Si异质结, 该异质结在80–300 K 显示出了良好的整流特性和光诱导特性. 开启电压随着温度的升高而逐渐降低. 利用不同频率的光子辐照样品, 观察到明显的光电导效应. 且随着照射光子能量的增大, 结电流也相应变大, 光诱导效应越明显. BaTiO3薄膜电阻-温度(R-T) 曲线显示氧缺陷条件下BaTiO3薄膜具有良好的半导体特性.
关键词:
异质结
光诱导效应
3薄膜')" href="#">BaTiO3薄膜 相似文献
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Gasidit Panomsuwan Osamu Takai Nagahiro Saito 《Applied Physics A: Materials Science & Processing》2012,108(2):337-342
Metal?Cferroelectric?Cinsulator?Csemiconductor (MFIS) structures with BaTiO3 (BTO) as a ferroelectric film and SrTiO3 (STO) as an insulating buffer layer were fabricated on p-type Si(001) substrates using an ion beam sputter deposition technique. The effect of out-of-plane orientation on the electrical properties of the MFIS structures, including leakage current density and memory window behavior, were studied using the growth of the BTO ferroelectric film on Si substrate buffered by highly c-axis-oriented and random-oriented STO buffer layers. The experimental results show that the out-of-plane orientations of the BTO films were almost identical to those of the STO buffer layers. The MFIS structure with a high c-axis orientation exhibited a maximum clockwise capacitance-voltage memory window of 1.17?V with a low leakage current of 1.05×10?7?A/cm2 at an applied voltage of 4?V, which is a significant improvement compared to the MFIS structure with a random orientation. The difference in the electrical properties of the MFIS structures with both types of orientation is discussed in detail. The results obtained from this study indicate that the Au/BTO/STO/p-Si MFIS structure with high c-axis orientation has good potential for use in non-volatile memory applications. 相似文献
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运用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上旋涂制备了2-2型CoFe2O4/Pb(Zr0.53Ti0.47)O3磁电复合薄膜.制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小.SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构.制备的复合薄膜具有较好的铁电与铁磁性能.实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势. 相似文献
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Jiagang Wu Jiliang Zhu Dingquan Xiao Jianguo Zhu Junzhe Tan Qinglei Zhang Yuanyu Wang 《Applied Surface Science》2007,253(14):6222-6225
(Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 [PCNZT] thin films were deposited on the Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by RF magnetron sputtering with and without a LaNiO3 [LNO] buffer layer. Ca and Nb elements in PZT films enhance the ferroelectric property, LaNiO3 buffer layer improves the crystal quality of the PCNZT thin films. PCNZT thin films possess better ferroelectric property than that of PZT films for Ca and Nb ion substitution, moreover, PCNZT thin films with a LNO buffer layer possess (1 0 0) orientation and good ferroelectric properties with high remnant polarization (Pr = 38.1 μC/cm2), and low coercive field (Ec = 65 kV/cm), which is also better than that of PCNZT thin films without a LNO buffer layer (Pr = 27.9 μC/cm2, Ec = 74 kV/cm). The result shows that enhanced ferroelectric property of PZT films can be obtained by ion substitution and buffer layer. 相似文献
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采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词:
sol-gel法
铁电薄膜
4Ti3O12')" href="#">Bi4Ti3O12
C-V特性 相似文献
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PbO and PZT thin films were deposited on the p-type (1 0 0) Si substrate by the rf magnetron sputtering method with PbO and Pb1.1Zr0.53Ti0.47O3 targets for the application of the metal-ferroelectric-insulator-semiconductor (MFIS) structure. The MFIS structures with the PbO buffer layer show the good electric properties including a high memory window and a low leakage current density. The maximum value of the memory window is 2.0 V under the applied voltage of 9 V for the Pt/PZT (200 nm, 400 °C)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300 °C. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the substrate temperature of PbO affects the chemical states of the interface between the PbO buffer layer and Si substrate, which results in the inter-diffusion of Pb and the formation of the intermediate phases (PbSiO3). And the existence of the undesired SiO2 layer, which is the low dielectric layer, was confirmed at the surface region of the Si substrate by the XPS depth profile analysis. 相似文献
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Hyun Woo Chung 《Applied Surface Science》2006,252(13):4545-4548
New ferroelectric Pb(Zr,Ti)O3-Pb(Mn,W,Sb,Nb)O3 (PZT-PMWSN) thin film has been deposited on a Pt/Ti/SiO2/Si substrate by pulsed laser deposition. Buffer layer was adopted between film and substrate to improve the ferroelectric properties of PZT-PMWSN films. Effect of a Pb(Zr0.52Ti0.48)O3 (PZT) and (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers on the stabilization of perovskite phase and the suppression of pyrochlore phase has been examined. Role of buffer layers was investigated depending on different types of buffer layer and thickness. The PZT-PMWSN thin films with buffer layer have higher remnant polarization and switching polarization values by suppressing pyrochlore phase formation. The remnant polarization, saturation polarization, coercive field and relative dielectric constant of 10-nm-thick PLT buffered PZT-PMWSN thin film with no pyrochlore phase were observed to be about 18.523 μC/cm2, 47.538 μC/cm2, 63.901 kV/cm and 854, respectively. 相似文献
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Dong Hua Li 《Applied Surface Science》2006,252(13):4541-4544
In order to study the effect of different buffer layers on the Pb(Zr0.52Ti0.48)O3 (PZT) thin films, 10-nm thick (Pb0.72La0.28)Ti0.93O3 (PLT) and Pb(Zr0.52Ti0.48)O3 buffer layers have been deposited on the Pt(1 1 1)/Ti/SiO2/Si substrates by pulsed laser deposition, respectively. The top buffer layers were also deposited on PZT thin films with the same thickness of the seed layers in order to enhance the fatigue characteristics of PZT thin films. We compared the results of dielectric constant, hysteresis loops and fatigue resistance characteristics. It was found that the dielectric properties of PZT thin films with PLT buffer layers were improved by comparing with PZT thin films with PZT buffer layers. The polarization characteristics of PZT thin films with PLT buffer layers were observed to be superior to those of PZT thin films using PZT buffer layers. The remanent polarization of PZT thin films showed 36.3 μC/cm2 and 2.6 μC/cm2 each in the case of use PLT and PZT buffer layers. For the switching polarization endurance analysis, PZT thin films with PLT buffer layers showed more excellent result than that of PZT thin films with PZT buffer layers. 相似文献
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Pb(Zr0.52Ti0.48)O3 (PZT) thin films with large remanent polarization and SrBi2Ta2O9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages, bilayered Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films were fabricated on Pt/TiO2/SiO2/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2Pr) of 18.37 μC/cm2 than pure SBT and less polarization fatigue up to 1 × 109 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications. 相似文献
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建立了多层串联PZT95/5爆电换能组件3维数值模型,对固化封装条件下陶瓷介质击穿问题进行了计算分析,计算结果表明:在不改动器件外部结构尺寸条件下,采用等厚度PZT95/5叠片结构布局对进一步提高输出电压方面存在瓶颈。为克服上述影响以及降低爆电换能组件击穿概率,提出了PZT95/5铁电陶瓷非等厚度布局解决方案。为实现上述设想,通过引入不等式约束条件计算得到一组非等厚度优化布局,将爆电换能组件所用PZT95/5铁电陶瓷数量减至19片,同时有效实现该布局下,各片PZT95/5陶瓷电压均低于对应厚度击穿电压的优化目标。 相似文献
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V. G. Beshenkov V. A. Marchenko A. G. Znamenskii 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2010,4(5):761-765
The composition of PZT thin films deposited by diode HF sputtering of a ceramic target on Pt/Ti/SiO2/Si substrates was studied. The remanent polarization of grown films was to 22 μC/cm2. A technique for verifying the adequacy of elemental and phase composition of thin films to the ferroelectric phase composition was proposed. The problems of reliable contact of Pt electrodes with the PZT layer were considered. 相似文献