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1.
采用真空蒸镀方法,利用液体衬底在沉积过程中的线性扩散过程,在玻璃表面制备出斜率仅为10-5的楔形金薄膜逾渗系统,并用四引线方法测量了从该薄膜系统中得到的均匀无序金薄膜的导电特性.实验结果表明:和通常的平整薄膜逾渗系统相比,该薄膜系统呈现更为强烈的跳跃电导和隧道效应. 关键词: 带状薄膜 跳跃电导 隧道效应  相似文献   

2.
沉积在液体衬底上连续铝薄膜的微观结构   总被引:1,自引:0,他引:1       下载免费PDF全文
研究了沉积在硅油衬底表面的连续铝薄膜的微结构及其表面形貌.与沉积在单晶硅表面的铝薄膜相比,两种铝薄膜均属颗粒结构,但硅油表面的铝薄膜具有颗粒尺寸较小、大小不均匀,表面起伏较大等特点,而且在该铝薄膜边缘的下表面,有一明显的波纹状楔型结构,其斜率仅为10-4—10-5.实验结果表明:这一现象是由于液体衬底的热膨胀行为引起的.此外对样品的晶态也进行了研究. 关键词: 铝薄膜 液体衬底 微观结构  相似文献   

3.
以金属W和Ta为热丝,采用热丝化学气相沉积 ,在250℃玻璃衬底上沉积多晶硅薄膜.研究了热丝温度、沉积气压、热丝与衬底间距等沉积参数对硅薄膜结构和光电特性的影响,在优化条件下获得晶态比Xc>90%,暗电导率σd=10-7—10-6Ω -1cm-1,激活能Ea=0.5eV,光能隙Eopt≤1.3 eV的多晶硅薄膜. 关键词: 多晶硅薄膜 热丝化学气相沉积 光电特性  相似文献   

4.
金属Fe薄膜的PLD制备及其非线性光学性质研究   总被引:3,自引:0,他引:3       下载免费PDF全文
采用脉冲激光沉积(PLD)技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时,Fe薄膜在MgO基片上有很好的结晶性,并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性,得到了Fe薄膜的非线性折射率n2=709×10-5cm2/ kW,非线性吸收系数 β=-552×10-3cm/W. 关键词: Fe薄膜 非线性 脉冲激光沉积  相似文献   

5.
张剑楠  李颜涛  范翊  刘星元 《发光学报》2012,33(12):1295-1298
利用电子束沉积技术首次制备了氟化铒 (ErF3) 掺杂的氧化铟(In2O3)透明导电薄膜(IEFO),研究了薄膜的晶体结构、光学特性和电学特性。利用原子力显微镜测试了不同厚度薄膜的形貌,初步研究了薄膜的生长过程。研究发现:IEFO薄膜为多晶结构,Er原子的掺入改变了薄膜的优势生长方向,使薄膜在(211)、(222)、(444)3个方向上的生长趋势基本相同。 薄膜电阻率为1.265×10-3 Ω·cm,电子迁移率为45.76 cm2·V-1·s-1,电子浓度为1.197×1020 cm-3,在380~780 nm范围内的可见光平均透过率为81%。  相似文献   

6.
氮化铝薄膜的硅热扩散掺杂研究   总被引:1,自引:1,他引:0       下载免费PDF全文
采用热扩散方法,对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明:在1 250 ℃的温度下,氮化硅(SiNx)作为Si的扩散源,可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明:在460 ℃测试温度下,AlN薄膜在热扩散掺杂以后,其电导从1.9×10-3 S·m-1增加到2.1×10-2 S·m-1。高温变温电导测试表明:氮空位(V3+N)和Si在AlN中的激活能为1.03 eV和0.45 eV。  相似文献   

7.
制备了Cu-Al2O3-MgF2-Au双势垒隧道发光结,分析了结加上一定偏压后的电子隧穿过程.指出由于构成隧道结的绝缘栅薄膜的厚度及禁带宽度的不同而导致双势垒中能级产生分裂,使电子通过栅区时产生共振隧穿现象.根据这一现象,并结合结的I-V特性,对结的发光性能进行了讨论.这种结构的结与普通单势垒MIM结相比,其发光效率(10-6—10-5)提高了近一个数量级,且发光光谱的波长范围及谱峰均向短波长方向 关键词:  相似文献   

8.
采用传输线模型测量了重B掺杂p型金刚石薄膜(约1020cm-3)上Ti/A u欧姆接触电阻率ρc,测试了500℃退火前后及大电流情况下的I-V特性,研究 了退火对ρc的影响.结果表明,重掺杂和退火工艺是改善欧姆接触的有效手段. ρc随测试温度的变化表明金属/半导体接触界面载流子输运机制为隧道穿透.而 光照对ρc影响的分析表明金刚石可作为理想窗口材料.测试得到的最低ρ c值约为10-4Ωcm2. 关键词: 金刚石薄膜 欧姆接触 接触电阻率  相似文献   

9.
离子束溅射制备Nb2O5光学薄膜的特性研究   总被引:1,自引:0,他引:1       下载免费PDF全文
袁文佳  章岳光  沈伟东  马群  刘旭 《物理学报》2011,60(4):47803-047803
研究了离子束溅射(IBS)制备的Nb2O5薄膜的光学特性、应力、薄膜微结构等特性,系统地分析了辅助离子源的离子束能量和离子束流对薄膜特性的影响.结果显示,在辅助离子源不同参数情况下,折射率在波长550 nm处为2.310—2.276,应力值为-281—-152 MPa.在合适的工艺参数下,消光系数可小于10-4,薄膜具有很好的表面平整度.与用离子辅助沉积(IAD)制备的薄膜相比,IBS制备的薄膜具有更好的光学特性和薄膜微结构. 关键词: 2O5薄膜')" href="#">Nb2O5薄膜 离子束溅射 光学特性 应力  相似文献   

10.
质子注入MBE碲镉汞n-on-p结性能研究   总被引:1,自引:0,他引:1       下载免费PDF全文
基于中波响应波段的分子束外延碲镉汞薄膜材料成功制备出不同质子注入剂量的大光敏元(5 00μm×500μm)的n-on-p结构的p-n结,并对相应的p-n结的电流-电压(I-V)特性进行 了研究.质子注入剂量为2×1015cm-2时R0A达312.5Ω ·cm2,低温热处理后达490Ω·cm2. 关键词: I-V特性 碲镉汞薄膜 质子注入 p-n结  相似文献   

11.
Thin films obtained with glasses of the B2S3Li2S and B2S3Li2SLiI systems, using a vacuum evaporation technique have been investigated. In each system, amorphous thin films and starting glasses have the same composition and similar conductivities, about 10?4 and 10?3Ω?1cm?1 respectively at 25°C. The deposition rate was in both cases 140 Å s?1. However, a thermal treatment at 90°C of the thin films containing lithium iodide enhances the conductivity by a factor of 10 and leads to lower activation energy (0.18 eV). This behavior has been identified as a Phipps effect and can be attributed to a quick ion diffusion along thin film - substrate interface. This interfacial region was found to show unique conduction properties including a very low Li+ migration enthalpy.  相似文献   

12.
The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate).The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry.It was found that for laser fluences up to 1.5 J/cm2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm2 the polyepichlorohydrin films present deviations from the bulk polymer.Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm2).The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material.The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.  相似文献   

13.
CuO薄膜的三阶非线性光学特性研究   总被引:1,自引:0,他引:1       下载免费PDF全文
采用脉冲激光沉积技术在Si(100)和熔石英基片上制备了单相的CuO薄膜.通过X射线衍射仪,拉曼光谱仪,场发射扫描电镜和紫外可见光光度计对薄膜的结构,表面形貌和光学性质进行了表征. 场发射扫描电镜结果表明CuO薄膜中晶粒排列致密且分布均匀,其尺寸约为45nm.结合飞秒激光(800nm,50fs)和Z扫描方法测量了薄膜的三阶非线性光学特性,结果表明CuO薄膜具有超快的非线性光学响应且非线性折射率和非线性吸收系数均为负值,其大小分别为-3.96×10-17 m2< 关键词: CuO薄膜 Z-扫描')" href="#">Z-扫描 三阶光学非线性  相似文献   

14.
p-Type Zn0.9Mg0.1O thin films have been realized via monodoping of Li acceptor by using pulsed laser deposition. The Li-doped Zn0.9Mg0.1O thin films possessed a good crystallinity with a (0 0 0 2) preferential orientation and a high transmittance in the visible region. Secondary ion mass spectroscopy revealed that Li has been successfully incorporated into the Zn0.9Mg0.1O films. The obtained films with the best electrical properties show a hole concentration in the order of 1017 cm−3 and a room-temperature resistivity in the range of 58-72 Ω cm.  相似文献   

15.
Aluminum was evaporated in a conventional evaporator using an oil diffusion pump (p=3 × 10-6torr) and in an ultra-high vacuum system evacuated by ion and titanium sublimation pumps (p=5 × 10-9torr) and deposited at rates ranging from 2.5 Å/sec to 500 Å/sec. For aluminum deposited at rates of 300 Å /sec and greater there is no measurable difference in the visible and ultraviolet reflectance of the two types of films. However, if lower deposition rates are used the reflectance of aluminum films deposited at 5 x 10-9 torr is much less dependent on deposition rate than that of films condensed at 3 x 10-6 torr. Aluminum films deposited at high rates, both in conventional and ultra-high vacuum systems, show less degradation of reflectance during exposure to air than the films deposited at low rates.  相似文献   

16.
The synthesis of nanocrystalline ZnS thin films by pulsed laser deposition and their modification by swift heavy ions are presented. The irradiations with 150 MeV Ni ions at fluences of 1×1011, 1×1012 and 1×1013 ions/cm2 have been used for these studies. Irradiation results in structural phase transformation and bandgap modification of these films are investigated by using X-ray diffraction and UV-visible absorption measurements, respectively. Since stoichiometry changes induced by irradiation can contribute to the modification of these properties, elastic recoil detection analysis has been performed on pristine and 150 MeV Ni ions irradiated ZnS thin films using a 120 MeV Ag ion beam. The stoichiometry of the films has been found to be similar for pristine and ion irradiated samples. A structural phase diagram based on thermal and pressure spikes has been constructed to explain the structural phase transformation.  相似文献   

17.
利用直流溅射方法在液体基底(硅油)表面成功制备出金属铁薄膜系统,研究了其生长机理及特征的表面有序结构.实验发现铁薄膜的生长过程与液相基底表面非磁性金属薄膜的情况类似,基本服从二阶段生长模型.连续铁薄膜中可观测到尺寸巨大的圆盘形有序结构,其生长演化与溅射功率、沉积时间和真空环境中的生长时间等实验条件密切相关.实验证明,此类有序结构是在薄膜内应力作用下,铁原子及原子团簇在液体表面自由扩散迁移,并最终在硅油基底表面某些区域成核凝聚所致.在较大溅射功率和沉积时间条件下,圆盘外部区域的铁薄膜中形成周期分布的波纹褶皱,其波长约为10 μm,波峰基本与圆盘的边界平行.进一步研究表明:在沉积过程中,由于沉积铁原子的局域能量作用,导致硅油的表面层结构发生改变而形成一聚合物层;在随后的冷却过程中,聚合物层的强烈收缩使铁薄膜处于很大的压应力场中,促使薄膜起皱形成波纹结构. 关键词: 液体基底 铁薄膜 生长机理 有序结构  相似文献   

18.
Thin films of ionic conductors have low internal resistance. Hence, it could be used as an electrolyte material in sensors to operate at ambient temperatures. Cerium fluoride, a unipolar fluoride ion conductor, has got a different application in electrochemical sensor. In the present work, cerium fluoride thin films have been prepared by physical vapor deposition method and their electrical properties are studied. X-ray diffraction studies reveal the polycrystalline nature of the prepared thin films and the structure of the material. Scanning electron microscopy (SEM) images show grain-like structures. Conductivity analysis of the thin films has been studied by ac impedance analysis and the maximum conductivity value is found to be 1.04 × 10−6 S cm−1. The impedance spectra emphasize intergranular conduction in the prepared thin films.  相似文献   

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