Li2Mo2O6多晶材料的结构与电性能的研究

本文用固相反应烧结制备出Li₂Mo₂O₆多晶材料。经X射线分析、红外光谱和电子顺磁共振谱(EPR)的研究,确定了它的结构是Li₂Mo₂O₄和MoO₂两个晶相组成的烧结体。钼离子以四价状态存在于MoO₂晶相结构中。采用交流阻抗谱分析了晶界与温度变化的相关性。测得了样品的ln(σ_总T)-1/T 曲线是由两段直线和一段曲线所组成;总电导率化能σ_27℃=1.36×10^-3(Ω·cm)^-1,σ_115℃=1.49×10^-3(Ω·cm)^-1,σ_300℃=9.71×10^-3(Ω·cm)^-1,σ_370℃=2.42×10^-3(Ω·cm)^-1;电导活化能E₁=0.043eV,E₂=0.235eV,E_平均=0.76eV。采用维格纳极化电池法测得电子电导率σ_e,σ_e27℃=2.240×10^-5(Ω·cm)^-1,σ_e300℃=4.476×10^-3(Ω·cm)^-1。实验证明,室温下材料为固体电解质,300℃附近为良好的离子与电子混合导体。 关键词：     

LISICON(锗酸锌锂)单晶的Li+离子电导

本文研究了Lisicon(锗酸锌锂)单晶的Li⁺离子电导率。发现各结晶学方向电导率之间的关系为σ_b≤σ_a≤σ_c≤σ_[110],但各向异性不强。晶体中Li含量对电导率有明显的影响,当Li/Zn比率由6.7变到9.2时,300℃a方向电导率由4.3×10^-2Ω^-1·cm^-1增加到1.25×10^-1Ω^-1·cm^-1,logσT对1/T的曲线显示出三个转变点,分别在～80℃,～140℃和～300℃。电导的激活能分别为0.50—0.58eV(25—80℃),0.92eV(～80—140℃),0.64eV(～140—300℃)和0.36eV(>300℃),极化实验表明单晶的电子电导可以忽略。 关键词：     

过渡族元素掺杂BaTiO3-Tb1-xDyxFe2-y层状复合材料中的磁电效应

用溶胶-凝胶法制备1.0%mol Mn,Cr,Co掺杂 BaTiO₃(BTO)粉体,在1350℃下烧结成多晶陶瓷样品.X射线衍射和差示扫描量热分析表明,室温下掺杂BaTiO₃具有四方钙钛矿结构;居里点和相变潜热随Cr,Mn,Co掺杂逐渐降低.将掺杂BaTiO₃与Tb_1-xDy_xFe_2-y(TDF)胶合制成双层磁电复合材料,并研究了Cr:BTO-TDF,Mn∶BTO-TDF,Co:BTO-TDF层状复合材料中的磁电效应.实验表明,在340×80 A·m^-1偏置磁场下, Cr:BTO-TDF的横向磁电电压系数达到最大值586 mV·cm^-1·(80 A·m^-1)^-1.在400×80 A·m^-1偏置磁场下,Mn∶BTO-TDF和Co:BTO-TDF的横向磁电电压系数的最大值分别为480 mV·cm^-1·(80 A·m^-1)^-1和445mV·cm^-1·(80 A·m^-1)^-1.研究表明掺杂BaTiO₃-TDF层状复合材料中具有较强的磁电耦合.作为无铅压电材料,掺杂BaTiO₃制备的磁电效应器件颇具应用前景. 关键词： 磁电效应 双层复合材料 3')" href="#">掺杂BaTiO₃ 1-xDy_xFe_2-y')" href="#">Tb_1-xDy_xFe_2-y     

Li4SiO4-Li3VO4赝二元系和Li4GeO4-Li4SiO4-Li3VO4赝三元系中新的锂离子导体

本文在室温到300℃的温度范围内研究了Li₄SiO₄-Li₃VO₄和Li₄GeO₄-Li₄SiO₄-Li₃VO₄体系中的离子导电性,发现γ_II相固溶体Li_3+xV_1-xSi_xO₄是好的锂离子导体。所研究的成分中Li_3.3V_0.7Si_0.3O₄的离子电导率最高,室温下为1×10^-5Ω^-1·cm^-1,在42—192℃的电导激活能为0.36eV,电子电导率可以忽略,因而这是迄今所发现的最好的锂离子导体之一。粗略确定了Li₄GeO₄-Li₄SiO₄-Li₃VO₄三元系中电导率高的范围,发现在Li_3.5V_0.5Ge_0.5O₄中Si部分取代Ge可以使电导率进一步提高,Li_3.5V_0.5Ge_0.4Si_0.1O₄的室温电导率可达1.3×10^-5Ω^-1·cm^-1,电导激活能为0.40eV。 关键词：     

新型透明导电薄膜ErF3掺杂In2 O3的研制

利用电子束沉积技术首次制备了氟化铒 (ErF₃) 掺杂的氧化铟(In₂O₃)透明导电薄膜(IEFO),研究了薄膜的晶体结构、光学特性和电学特性。利用原子力显微镜测试了不同厚度薄膜的形貌,初步研究了薄膜的生长过程。研究发现:IEFO薄膜为多晶结构,Er原子的掺入改变了薄膜的优势生长方向,使薄膜在(211)、(222)、(444)3个方向上的生长趋势基本相同。 薄膜电阻率为1.265×10^-3 Ω·cm,电子迁移率为45.76 cm²·V^-1·s^-1,电子浓度为1.197×10²⁰ cm^-3,在380~780 nm范围内的可见光平均透过率为81%。     

10—290 K环境下海藻纤维导热性能的研究

为研究海藻纤维变温环境下的热性能,利用瞬态电热技术（TET）在环境温度10 K—290 K的区间内对材料导热、体积比热等参数受温度影响的情况进行测试分析。结果表明：海藻纤维导热系数和比热均随温度降低而减小,热扩散系数随温度的降低而增大,内部结构较为稳定。海藻纤维的德拜温度分别是202.99 K、192.31 K,低温极限下的残余阻温系数分别为3.46×10⁵ s·m^-2、2.15×10⁵ s·m^-2。     

衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响

研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响. XRD和SEM的研究结果表明，衬底温度对ZnO薄膜的微观结构有显著影响，明显的形貌转变温度大约发生在175℃，低于175℃，薄膜呈镜面结构，晶粒为球状，高于177℃的较高温度范围，薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织；随着温度增加，薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96 cm²/V·s的高迁移率和3.28×10^-2 Ω·cm的低电阻率，对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极. 关键词： MOCVD ZnO薄膜 透明导电氧化物 太阳电池     

高电导a-Si:H:Y合金的电输运特性

本文报道由rf溅射技术将稀土元素Y掺入非晶硅,当掺Y浓度为20％左右时,获得了室温直流电导率为2×10¹Ω^-1·cm^-1的a-Si:H:Y合金膜。测量表明该合金膜是n型。变温电导测量指出,在测量温度范围内lnσ与l/T的关系可拟合于两条直线。对于衬底温度为260℃,290℃和330℃溅射的合金膜,其转折点分别出现在～70℃,～75℃和～90℃。这表明a-Si:H:Y合金膜存在两种电传导机制:在室温附近电子在Y施主杂质带内跳跃传导,在高温情况下电子在导带延展态内传导。并且得到Y施主杂质带中心处于导带E_c以下0.06—0.07eV。 关键词：     

溅射制备Ge,Nb共掺杂窄光学带隙和低电阻率的TiO2薄膜

采用射频磁控溅射技术制备了Ge,Nb共掺杂的锐钛矿结构TiO₂薄膜,详细探讨了薄膜的结构、电阻率及光学带隙等性质随Ge,Nb掺杂量、溅射功率和热处理温度等参数的变化,发现Ge,Nb共掺杂可以同时调节TiO₂薄膜的光学带隙和电阻率.体积分数约为6%Nb和20%Ge的共掺杂TiO₂薄膜电阻率由10⁴Ω/cm减小至10^-1Ω/cm,光学带隙由3.2 eV减小至1.9 eV.退火后掺杂TiO₂薄膜不仅显示更低的电阻率,还表现出更强的可见-红外光吸收.结果表明,改变Ge,Nb的掺杂量和退火条件能够制备出电阻率和带隙都可调的TiO₂薄膜.     

Sm0.9Sr0.1AlO3-δ钙钛矿氧化物的固相反应合成和电学性能

用固相反应法制备了Sm_0.9Sr_0.1AlO_3-δ钙钛矿氧化物陶瓷.通过XRD,SEM和交流复阻抗谱以及氧浓差电池方法研究了样品的物相结构、微观形貌、电学性能及输运机理.结果表明,在1650℃烧结时,可以制备出单相的具有四方钙钛矿结构的氧化物Sm_0.9Sr_0.1AlO_3-δ;1650℃烧结16 h时的Sm_0.9Sr_0.1AlO_3-δ样品具有最高的相对密度和电导率,其值分别为96.7%和1.3×10^-2S/cm(900℃),比未掺杂的SmAlO₃的电导率大4个数量级左右,高温区电导活化能(T>670℃)小于低温区电导活化能(T<670℃);Sm_0.9Sr_0.1AlO_3-δ在空气气氛中是一个氧离子和电子空穴的混合导体,氧离子迁移数在0.7左右,并随温度升高逐渐增加,氧离子电导活化能(0.95eV)大于空穴电导活化能(0.84eV),900℃时氧离子电导率为9.65×10^-3S/cm. 关键词： 3')" href="#">SmAlO₃ 氧离子导电性 混合导体 活化能     

The electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10 15 ions/cm 2 and 10 16 ions/cm 2 . The doped c-BN thin films are then annealed at a temperature between 400°C and 800 C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.     

高温还原氧化石墨烯膜及其导热性能

采用氧化还原法制备了结构致密且具有较高柔韧性的石墨烯薄膜,探究了薄膜经过较高退火温度还原后结构变化,并通过T型稳态法测量了其热导率,研究了还原温度对薄膜热导率和力学性能的影响。结果表明,高温还原有助于氧化石墨烯中含氧官能团的去除和sp2杂化碳晶格的恢复,并且温度越高还原效果越好。当还原温度高达2800℃时,在200~350 K温度范围内石墨烯膜的热导率在336.9~436 W·m^-1·K^-1之间,伴随着温度的升高,热导率有先增大后减小的趋势。     

退火温度对旋涂法制备SnO_2薄膜性能的影响

采用旋涂法在玻璃基底上制备SnO_2薄膜,通过原子力显微镜(AFM)、X射线反射(XRR)、傅氏转换红外线光谱仪(FT-IR)、X射线衍射(XRD)、紫外-可见分光光度计、四探针、开尔文探针系统对薄膜的表面形貌、结构及光学特性、电学特性进行分析,探讨了退火温度对薄膜质量的影响及作用机制。研究发现:随着退火温度升高,薄膜厚度和有机成分杂质减小,薄膜密度递增,但薄膜表面粗糙度有所上升;当退火温度升高至500℃时,薄膜结构由非晶转变为结晶,其主要晶面为氧化锡的(110)、(101)和(211)晶面。旋涂法制备的氧化锡薄膜在可见光区域的平均透光率在90%以上,随着退火温度上升,薄膜在400～800 nm波段的透光率先减小后增大,薄膜的带隙宽度分别为3. 840 eV(沉积态薄膜)、3. 792 eV(100℃)、3. 690 eV(300℃)和3. 768eV(500℃);薄膜的电导率也随着退火温度升高而增加,在500℃时电导率高达916 S/m;薄膜的功函数先增大后减小,分别为(4. 61±0. 005) eV(沉积态薄膜)、(4. 64±0. 005) eV(100℃)、(4. 82±0. 025) eV(300℃)、(4. 78±0. 065) eV(500℃)。     

微量Mg掺杂ZnO薄膜的光致发光光谱和带隙变化机理研究

利用射频磁控溅射(RF-MS)法在450℃玻璃基底上制备了Mg掺杂量分别为0.81at%,2.43at%和4.05at%的ZnO薄膜,对其微观结构、室温光致发光光谱(PL)、光学和电学性质进行了研究.结果发现,微量Mg掺杂ZnO薄膜晶体具有六方纤锌矿结构并保持高结晶质量;掺杂0.81at%和2.43at%Mg的ZnO薄膜室温PL谱中近带边发射(NBE)峰的短波方向出现了高能发射带与NBE峰同时存在;随着Mg掺杂量增加至4.05at%,这个高能发射带逐步将NBE峰掩盖.推测在Mg掺杂ZnO薄膜中,Mg2+替代Zn2+附近核外电子的能量增大并产生了一个高能级.而未被Mg2+替代的Zn2+周围的核外电子能量状态不变,带间能级依然存在,随着Mg掺杂量的增加处于高能级的电子数目逐步增加并占绝对优势.因此,ZnO薄膜随着Mg掺杂量增加薄膜禁带宽度增大,这是由于Mg掺杂后周围电子能量增大与Burstein-Moss效应共同作用的结果.另外,薄膜在可见光区域的平均透射率均大于85%,随着Mg掺杂量的增加,薄膜禁带宽度增大并在3.36—3.52eV内变化;Mg掺杂量为0.81at%,2.43at%和4.05at%时,薄膜电阻率分别为2.2×10-3,3.4×10-3和8.1×10-3Ω.cm.     

Ce1-xErxO2-δ的溶胶-凝胶法合成及其性质

采用溶胶-凝胶法合成Ce1-xExO2-δ(x=0.00～0.30)系列固体电解质,系统地研究了其晶体结构和导电性.X-射线衍射(XRD)结果表明:所有Ce1-xErxO2-δ粉体经800℃焙烧2 h后,均结晶为立方萤石结构,其平均晶粒尺寸为32～43nm,晶胞参数与掺杂量的非线性关系与掺杂离子半径、氧空位及缺位缔合有...     

Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition

Magnesium and aluminum doped CdO thin films were deposited on quartz substrate using pulsed laser deposition technique. Magnesium is used to widen the band gap and aluminum is used to increase carrier concentration of CdO films. The effect of growth temperature on structural, optical, and electrical properties was studied. These films are crystalline in nature and their preferred orientation depends on growth temperature. These films are highly transparent (∼86%) in visible region. The band gap of the films varies from 3.1 eV to 3.4 eV. The electrical conductivity and carrier concentration were found to decrease with increase in growth temperature.     

Electrical conductivity of nitride carbon films with different nitrogen content

The electrical conductivity of nitride carbon (DLC: N) films has been studied. It is found that the electrical conductivity of the deposited films increases slowly with increasing nitrogen content, however, it decreases after the nitrogen content in the film reaches a certain value of 12.8 at%. Thermal treatment results show that the electrical conductivity of the lowly nitrogen doped DLC film increases rapidly, while that of the heavily doped film decreases after annealing at 300 °C for 30 min. Raman and XPS spectra results show that when the nitrogen content in the films reaches a certain value, there appears nonconductive phases. Therefore the electrical conductivity of the heavily doped films decreases. FTIR spectra analysis results show that the nitrogen atom as an impurity center undergoes an ‘activation’ process during the thermal treatment, which leads to the increase of the electrical conductivity. Therefore, the nitrogen in these two kinds of films has different effects on the electrical conductivity.     

等离子增强原子层沉积低温生长AlN薄膜

采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜, 利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、 X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析, 结果表明, 采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200 ℃, 薄膜表面平整光滑, 具有六方纤锌矿结构与(100)择优取向, Al_2p与N_1S的特征峰分别为74.1 eV与397.0 eV, 薄膜中Al元素与N元素以Al-N键相结合, 且成分均匀性良好. 关键词： 氮化铝 等离子增强原子层沉积 低温生长 晶态薄膜     

Atomic diffusion in annealed Cu/SiO2/Si（100） system prepared by magnetron sputtering

Cu thin films are deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The inter-face reaction and atomic diffusion of Cu/SiO2/Si (100) systems are studied by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si(100) is 350 C. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the Cu/SiO2/Si (100) systems copper silicides are not formed below an annealing temperature of 350 C. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450 C.     

High-conductive nanocrystalline silicon with phosphorous and boron doping

Intrinsic, P- and B-doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The microstructures, optical and electronic properties have been evaluated for the undoped and doped nanocrystalline films. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron and phosphorous in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the activation of dopant by annealing increased the room temperature dark conductivity from 3.4 × 10⁻⁴ S cm⁻¹ to 5.3 S cm⁻¹ for the P-doped films and from 1.28 × 10⁻³ S cm⁻¹ to 130 S cm⁻¹ for the B-doped films. Meanwhile, the corresponding value of conductivity activation energies was decreased from 0.29 eV to 0.03 eV for the P-doped films and from 0.3 eV to 5.6 × 10⁻⁵ eV for the B-doped films, which indicated the doped nc-Si films with high conductivity can be achieved with the present approach.