SixNy沉积参数对量子阱混杂效果的影响

Si_xN_y常被用作量子阱混杂（QWI）的抑制材料,为了探索Si_xN_y的生长工艺对InGaAs/GaAs量子阱结构混杂效果的影响,对等离子体增强化学气相沉积（PECVD）法的工艺参数,如沉积时间、SiH₄流量以及射频（RF）功率进行一系列实验。实验结果表明：Si_xN_y可以较好地保护量子阱,但其厚度对QWI抑制效果的影响较小;当SiH₄流量较大时,Si_xN_y中富Si,退火过程中Si可能发生扩散而与P型欧姆接触层形成电补偿,同时诱导量子阱混杂,使其波长发生较大蓝移;减少SiH₄流量,Si_xN_y中Si的含量降低,折射率降低,但蓝移量仍较大;在一定范围内,蓝移量随着RF功率的增大而增大;当RF功率为50 W、SiH₄流量为50 sccm时,Si_xN_y...     

分子动力学模拟H原子与Si的表面相互作用

通过分子动力学模拟了入射能量对H原子与晶Si表面相互作用的影响. 通过模拟数据与实验数据的比较, 得到H原子吸附率随入射量的增加 呈先增加后趋于平衡的趋势. 沉积的H原子在Si表面形成一层氢化非晶硅薄膜, 刻蚀产物(H₂, SiH₂, SiH₃和SiH₄)对H原子吸附率趋于平衡有重要影响, 并且也决定了样品的表面粗糙度. 当入射能量为1 eV时, 样品表面粗糙度最小. 随着入射能量的增加, 氢化非晶硅薄膜中各成分(SiH, SiH₂, SiH₃)的量以及分布均有所变化. 关键词： 分子动力学 吸附率 表面粗糙度 氢化非晶硅薄膜     

SiH4激光等离子体内自由基反应动力学研究

本工作采用时间分辨的OES(Optics Emission Spectroscopy)技术,研究横向激励大气压(TEA)CO₂激光诱发的SiH₄等离子体内碎片反应动力学过程。实验结果表明,等离子体内某些碎片的发光特征谱线主峰位置明显不同。据此,讨论了各碎片的产生及反应过程。比较各碎片发光的持续时间及综合其它OES结果,我们认为SIH₄激光等离子体的最终反应通道为产生Si的通道。 关键词：     

H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

以SiH₄，Ar和H₂为反应气体，采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现，反应气体中H₂的比例是影响薄膜结晶质量的重要因素，在适量的H₂比例下制备的多晶Si薄膜具有结晶相体积分数高，氢含量低，生长速率快、抗杂质污染等特性. 关键词： 低温多晶Si薄膜 等离子体CVD 4')" href="#">Ar稀释SiH₄ 2比例')" href="#">H₂比例     

低温湿氧氧化提高多孔硅发光的稳定性

用低温湿氧氧化方法对多孔硅进行后处理,获得了光致发光强度强、发光稳定的样品,顺磁共振谱表明这种样品表面的悬挂键密度较小,通过对样品红外光谱的测试和分析,指出SiH(O₃),SiH(SiO₂),SiH₂(O₂)结构的产生是实验中多孔硅稳定性提高的原因. 关键词：     

氮化硅薄膜中纳米非晶硅颗粒的键合结构及光致发光

采用螺旋波等离子体化学气相沉积技术以N₂/SiH₄/H₂为反应气体制备了镶嵌有纳米非晶硅颗粒的氢化氮化硅薄膜,通过改变N₂流量实现了薄膜从红到蓝绿的可调谐光致发光.傅里叶红外透射和紫外-可见光吸收特性分析表明,所生长薄膜具有较高的氢含量,N₂流量增加使氢的键合结构发生变化,非晶硅颗粒尺寸减小,所对应的薄膜的光学带隙逐渐增加和微观结构有序度减小.可调光致发光(PL)主要来源于纳米硅颗粒的量子限制效应发光,随N₂流量增加,PL的谱线展宽并逐渐增强. 关键词： 傅里叶红外透射谱 光吸收谱 纳米硅粒子镶嵌薄膜 光致发光     

HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究

用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明，当反应气体中SiH₄浓度在3.6%—50%之间大范围变化时，μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明，在SiH₄浓度较大时制备的薄膜，其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH₄气体高度分解，等离子体高度电离. 关键词： 微波电子回旋共振化学气相沉积 氢化微晶硅薄膜 拉曼散射 X射线衍射     

PECVD a-SiNx:H薄膜中的氢分布

用红外光谱、质子核磁共振谱对以SiH₄/NH₃/N₂混合气体为源、用等离子体增强化学气相淀积法淀积的非晶氢化氮化硅(a-SiNx:H)薄膜进行了分析,结果表明膜中H以Si-H和N-H形式存在,均呈集聚和疏散两种分布状态,衬底温度影响氢的总量和分布均匀性,射频功率显著影响[N-H]/[Si-H],退火后氢仍呈集聚和疏散两种分布.     

SiH4激光等离子体内H谱线的线型研究

本工作利用光学多道分析仪(OMA Ⅲ)测量了脉冲TEA CO₂激光诱发的SiH₄等离子体内H Balmer系的H_α,H_σ和H_γ线的线型。结果表明,三条谱线的FWHM(半值全宽度)随跃迁上能级的主量子数的增加而增加,即△λ_1/2(H_α)<△λ_1/2(H_β)<△λ_1/2(H_γ)。通过对等离子体内各类加宽机制的讨论,得出等离子体内谱线的主要加宽机制为Stark加宽。由H_α线的实验线型与Stark加宽理论线型的拟合,得到等离子体的两个重要参量,平均电子密度N≈10¹⁷cm^-3,电子温度T≈40 000K。由H_β线的时间分辨测量得到等离子体的电子密度随时间的演变曲线。 关键词：     

用耦合簇理论及相关一致五重基研究SiH$lt;sub$gt;2$lt;/sub$gt;($lt;i$gt;X$lt;/i$gt;$lt;sup$gt;1$lt;/sup$gt;$lt;i$gt;A$lt;/i$gt;$lt;sub$gt;1$lt;/sub$gt;)自由基的解析势能函数

运用单双迭代三重激发耦合簇理论和相关一致五重基对SiH₂的基态结构进行了优化, 并在优化结构的基础上进行了离解能和振动频率的计算. 结果表明: SiH₂的基态为C_2v结构, 平衡核间距R_Si—H= 0.15163 nm, H—Si—H键的键角α=92.363°, 离解能D_e（HSi—H）=3.2735 eV, 频率ν₁（a₁）=1020.0095 cm^-1, ν₂（a₁）=2074.8742 cm^-1, ν₃（a₁）=2076.4762 cm^-1. 这些结果与实验值均较为相符. 对H₂的基态使用优选出的cc-pV6Z基组、对SiH的基态使用优选出的aug-cc-pV5Z基组进行几何构型与谐振频率的计算并进行单点能扫描, 且将扫描结果拟合成了解析的Murrell-Sorbie函数. 与实验结果及其他理论计算结果的比较表明, 本文关于SiH自由基光谱常数（D_e,R_e, ω_e, B_e, α_e和ω_eχ_e）的计算结果达到了很高的精度. 采用多体项展式理论导出了SiH₂（C_2v, X¹A₁）自由基的解析势能函数, 其等值势能图准确再现了它的离解能和平衡结构特征. 同时还给出了SiH₂（C_2v, X¹A₁）自由基对称伸缩振动等值势能图中存在的两个对称鞍点, 对应于SiH+H→SiH₂反应, 势垒高度为0.5084 eV. 关键词： 2')" href="#">SiH₂ Murrell-Sorbie函数 多体项展式理论 解析势能函数     

Studies on the 1831 cm−1 SiH band in NTD c-Si containing H

Abstract

The dose dependence and annealing behavior of the 1831 cm^?1 SiH band in NTD c-Si containing H have been studied via FTIR. The annealing kinetics has been found to be of first order with the activation energy equal to 1.45⁺ _? 0.1 eV. The possible models for this SiH band have been discussed.     

Overtone spectrum and the Fermi resonance of the SiH chromophore in SiHCI3

The Fourier transform and Fourier transform intracavity laser absorption spectra of the gas phase SiHCl₃ molecule were recorded from 1000 cm-¹ up to 13 000 cm-¹. The normal mode analysis is carried out to fit the observed band centres. The reduced Hamiltonian models in terms of normal and curvilinear internal coordinates are used to study the Fermi resonance between the SiH stretching and bending modes and analyse the observed band centres associated with the SiH chromophore. The resonance in the SiH chromophore is found not to be important due to the cancellation of the contributions from the kinetic and the potential coupling terms. Off-diagonal anharmonic constants between the SiH stretching and bending manifold and the molecular frame have been determined. The SiH chromophore vibrational intensities are also reported.     

332—362nm范围内CF2Cl自由基的共振增强多光子电离研究

用CF₂Cl₂分子直流脉冲放电的方法产生CF₂Cl自由基，结合共振增强多光子电离(REMPI)技术，测量了332—362nm波长范围内CF₂Cl自由基的(2+1)REMPI光谱，分析并标识了4s Rydberg态带源位于(ν_0—0=55371cm^-1)，两个被激活振动模ω′₃(CF₂剪式振动模)和ω₄′(OPL 关键词：     

Luminescence and decay times of CsI:In+

Luminescence spectra of single crystals of CsI:In⁺ excited in the A(304 nm), B(288 nm), C(268 nm) and D(257 nm) absorption bands have been studied in the temperature range 4.2–300 K. Excitation in the A band at 4.2 K gives rise to the principal emission at 2.22 eV accompanied by a partly-overlapping weak band at 2.49 eV. An additional emission band at about 2.96 eV is observed on excitation in the B, C or D bands. Yet another emission band located at 2.67 eV is excited only in the D band. The relative intensities of the bands are very sensitive to excitation wavelength as well as to temperature. The origin of all these bands is assigned in terms of a model for the relaxed excited states (RES). All the luminescence spectra were resolved into an appropriate number of skew-Gaussian components. Moments analysis leads to a value of (1.35 ± 0.02) × 10¹³ rad s^-1 for the effective frequency (ω_eff) of lattice vibrations coupled to the RES. At the lowest temperature, the radiative decay times of each of the intracenter emission bands (2.22, 2.49 and 2.96 eV) show a slow decay ( ～ 10–100 μs) and a fast decay ( ～ 10–100 ns). The 2.96 eV band, which is assigned to an emission process which is the inverse of the D-band absorption, exhibits a single decay mode ( ～ 10 μs). The intrinsic radiative decay rates (k₁, k₂), the one-phonon transition rate (K) and the second-order spin-orbit splitting (D) for the RES responsible for the principal emission are: k₁ = (6.0±-0.3)×10³ s^-1, k₂ = (1.33±-0.06)×10⁵ s^-1, K = (2.4±-0.4)×10⁷ s^-1 and D = (13.8±-0.5) cm^-1.     

CF自由基二光子共振增强多光子电离研究：5p Rydberg态观测与分析

报道260—360nm波长范围内CF自由基(2+1)共振增强多光子电离(REMPI)激发谱的研究-CF自由基通过Ar/CF₄,Ar/CF₂Cl₂或Ar/CF₃COOH混合气体的直流脉冲放电产生-在260—295nm波长范围内,观测到一个新的高Rydbery态振动序列,其带源位于295-22nm(2hν=67746cm^-1),分析表明,该振动序列来源于5p Rydberg态的二光子共振激发,测得的振 关键词：     

Shock-tube determination of absorption cross sections and A2Δ − X2Π band transition moments of SiH

The overall absorption cross sections and electronic transition moments of the A²Δ ? X²Π band system of SiH have been determined by using an absorption technique with a shock tube at temperatures of 2600–3800 K over the wavelengths of 150–650 nm. Absorption cross sections are shown to be dominated by continua. The possible contributions to the overall cross sections by a low-lying ⁴Σ^- and a high-lying ⁴Σ^- state are discussed. At 200, 228, 340, 405, and 550 nm, the continuum cross sections are (2.9±1.0)×10^-17, (2.0±0.5)×10^-17, (3.2±0.6)×10^-18, (3.8±0.6)×10^-18, and (1.8±0.8)×^-18cm², respectively. The overall emission intensity and the Si+H→SiH+hv radiative recombination rate are (6.7± 2.3)×10^-35(3500/T)^0.7(Si)(H) watt-cm^-3 and (1.3±0.4)×10^-17(3500/T)^1.1(Si)(H) cm^-3-s^-1, respectively. The A ? X transition moments are 0.12±0.04a.u. for the (0, 0) and (1, 1) bands. The intensity of each branch in the A ? X (0, 0) band follows approximately the prediction based on the Hönl-London factors of Kovacs. The data are applied to the study of the flow field around a spacecraft entering the Jovian atmosphere.     

掺铒矾酸钇晶体上转换荧光研究

使用波长为808和658nm的半导体激光器和染料激光器作为激发源，测量了Er³⁺：YVO₄晶体的波长在553和410nm附近的上转换荧光.对激发过程的分析表明，贡献于上转换荧光的主要激发机制为激发态吸收.在不同浓度下对上转换荧光的寿命测量结果显示，随Er³⁺浓度的提高，553nm绿光的荧光寿命随浓度的增加而减小，但410nm的荧光寿命随Er³⁺浓度无明显变化.结合绿光强度随掺杂浓度增加而减小的结果，认为在所测浓度范围内 关键词：     

高效率低阈值Nd:S-FAP晶体激光特性

测量了新型晶体Nd:S-FAP[Nd:Sr₅(PO₄)₃F]的吸收光谱特性,它具有宽的有效吸收带,在575.0nm和805.4nm处有二个强的吸收峰.用可调谐染料激光器测量了575.0nm处的吸收系数为19.7cm^-1,用波长为575.0nm的的染料激光作泵浦源,实现了1.059μm的全偏振光输出,最低闽值为2.5mJ,斜效率为49%.用KTP倍频获得的绿光的波长为0.5295μm,峰值半宽度为1.0nm.     

Quantum Effect on the Energy Levels of Eu2+ Doped K2Ca2(SO4)3 Nanoparticles

Quantum confinement effect on the energy levels of Eu²⁺ doped K₂Ca₂(SO₄)₃ nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu²⁺ doped K₂Ca₂(SO₄)₃ microcrystalline sample observed at ～436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f⁶5d energy level of Eu²⁺. Energy band gap values of the micro and nanocrystalline K₂Ca₂(SO₄)₃ samples were also determined by measuring the UV–visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.     

草酰氯的激光诱导荧光激发谱

本文报道草酰氯C₂O₂Cl₂在358—372.5nm范围的激光诱导荧光(LIF)激发谱。对60多条振动谱带进行了归属,其中24条是吸收光谱中没有的。由振动结构得到C₂O₂Cl₂分子在X基态和?激发态的部分振动频率,其中v＂₇=84cm^-1和v＇₇=164cm^-1是新的数据。对4₀¹振动带的转动结构的分析给出转动常数A=0.190cm^-1,B=0.114cm^-1,C=0.048cm^-1。 关键词：