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Investigation of photoelectron temporal characteristics in silver halide microcrystals using the microwave absorption technique 总被引:2,自引:0,他引:2 下载免费PDF全文
The free photoelectron lifetime reflects to a large extent the latent image formation efficiency and sensitivity of silver halide material. The microwave absorption dielectric-spectrum technique enables measurement of the photoelectron decay process of silver halide emulsion exposed to 35ps laser pulse. For T-grain AgBr emulsion, the relationship between exciting energy and photoelectron action has been obtained, and the influence of iodide dopants on photoelectron lifetime was measured and analysed. The photoelectron lifetime of dye-sensitized AgBr emulsion with tabular grains is shorter than that with cubic grains, and the latent image formation efficiency of the former is higher than the latter. 相似文献
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本工作利用光学多道分析仪(OMA Ⅲ)测量了脉冲TEA CO2激光诱发的SiH4等离子体内H Balmer系的Hα,Hσ和Hγ线的线型。结果表明,三条谱线的FWHM(半值全宽度)随跃迁上能级的主量子数的增加而增加,即△λ1/2(Hα)<△λ1/2(Hβ)<△λ1/2(Hγ)。通过对等离子体内各类加宽机制的讨论,得出等离子体内谱线的主要加宽机制为Stark加宽。由Hα线的实验线型与Stark加宽理论线型的拟合,得到等离子体的两个重要参量,平均电子密度N≈1017cm-3,电子温度T≈40 000K。由Hβ线的时间分辨测量得到等离子体的电子密度随时间的演变曲线。
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本工作采用光学发射谱方法测量了TEA CO2脉冲激光辐射SiH4+CH4系统产生的等离子体反应过程中的发射谱特性,探测到了Si,Si^+,Si^2+,C,C^+,C^2+,CH,SiH,SiH^+,Si2和H的特征辐射,研究了含C,Si碎片粒子光谱随实验条件的变化规律,并讨论了反应条件对OES的影响。 相似文献
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ELECTRON TRANSPORT BEHAVIOURS IN THE NITROGEN DIRECT CURRENT GLOW DISCHARGE 总被引:9,自引:0,他引:9 下载免费PDF全文
A Monte Carlo simulation is presented to describe the electron transport behaviours in the nitrogen direct current glow discharge. The energy and angular distributions of the electrons at different positions of the cathode dark space are calculated; their energy and density distribution features throughout the entire discharge are discussed. The influence of molecular vibrational excitation, typical for electron-molecule collisions, has been studied and the elementary process of active species generation has been illustrated. The simulated results reveal that, in the cathode dark space, the high-energy electrons are mainly forward scattering and behave as a high-energy ‘electron beam'. The sharp increase of the number of secondary electrons plays an important role in producing active species at the interface between the cathode dark space and the negative glow region. The vibrational excitation enhances the energy loss of electrons in the negative glow region. 相似文献
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利用微波吸收介电谱检测技术,检测均匀掺杂[Fe(CN)6]4-盐的立方体AgCl微晶首次曝光后的自由和浅束缚光电子的衰减时间分辨谱。实验发现,随着掺杂浓度的增加,样品中自由光电子衰减时间逐渐从未掺杂时的116ns延长至1133ns。分析光电子衰减曲线还同时得到,随着掺杂浓度的增加,光电子的前期较慢衰减过程逐渐变快,后期较快衰减过程逐渐变慢,总体上衰减时间逐渐增加,且掺杂浓度变化对后期衰减影响较大。研究表明掺杂使得晶体中引入了能总体上延缓光电子衰减的浅电子陷阱,并且随掺杂浓度的增加,浅电子陷阱特征更加明显。 相似文献
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螺旋波等离子体化学气相沉积法制备纳米碳化硅薄膜 总被引:1,自引:0,他引:1
采用螺旋波等离子体化学气相沉积(HWP-CVD)技术在si(100)和石英衬底上合成了具有纳米结构的碳化硅薄膜。通过X射线衍射(XRD)、傅立叶红外透射(FTIR)和原子力显微镜(AFM)等技术对所制备薄膜的结构、组分和形貌进行了分析,利用光致发光技术研究了样品的发光特性。分析表明,在700℃的衬底温度和1.33Pa的气压条件下所制备纳米SiC薄膜的平均颗粒度在3nm以下,红外透射谱主要表现为si-C吸收。结果说明HWP-CVD为制备高质量纳米SiC薄膜的有效技术,所制备样品呈现出室温短波长可见发光特性,发光谱主峰位于395nm附近。 相似文献