镶嵌于多孔硅微腔中8-羟基喹啉铝的窄峰发射

利用浸渍法将8羟基喹啉铝(Alq₃)镶嵌到多孔硅微腔中,制备了多孔硅微腔—Alq₃镶嵌膜,研究了多孔硅微腔对镶嵌其中的Alq₃自发发射的微腔效应,观察到了光谱窄化、发光强度增强等现象。镶嵌于多孔硅微腔中的Alq₃荧光光谱的半峰全宽只有15nm,而非微腔样品,即镶嵌于普通的单层多孔硅中Alq₃荧光谱半峰全宽在85nm以上。并且有微腔时Alq₃发光强度比没有微腔时Alq₃发光强度增强一个数量级。随机改变微腔中Bragg反射镜高折射率层的几何厚度可使高反射区展宽,从而更加有效地抑制了多孔硅本身的发光模,使发光色度更纯,但由于峰值透射率减小,导致共振峰强度有所减小。多孔硅微腔有机镶嵌膜有可能成为进一步发展Alq₃在电致发光器件方面应用的一条新途径。     

光照下经H2O2处理的多孔硅的光致发光

光照下经H₂O₂处理的多孔硅其荧光强度随处理时间增加先增强后减弱,处理1min后,荧光强度达极大。未经H₂O₂处理的多孔硅在空气中激光照射下,其荧光退化很快,经H₂O₂处理的多孔硅在同样条件下,荧光退化明显变慢。红外吸收实验表明,H₂O₂处理后多孔硅与氧有关的振动大幅度增强,而各种Si—H键则明显减少。对比红外吸收与荧光强度的变化, 关键词：     

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

利用直流脉冲磁控溅射方法在室温下通过改变O₂流量制备具有不同晶体结构的N掺杂TiO₂薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO_1.68±0.06N_0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO₂薄膜的沉积速率、晶体结构等主要依赖于O₂流量.在O₂流量为2 sccm时,N掺杂TiO₂薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O₂流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O₂流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO₂薄膜,需在高O₂流量(＞10 sccn)条件下制备. 关键词： 2薄膜')" href="#">N掺杂TiO₂薄膜 磁控溅射 化学配比 晶体结构     

通过氧源调控原子层沉积的SnOx层实现高效稳定的钙钛矿太阳能电池

原子层沉积的SnO_x薄膜具有良好的均匀性和致密性,常被用于提升倒置平面结构钙钛矿太阳能电池的稳定性。而SnO_x薄膜的特性对器件能量转换效率(Power conversion efficiency,PCE)有着重要影响。本文通过氧源(H₂O、O₃)调控SnO_x薄膜的能级和导电性,提升器件PCE。结果表明,O₃作为单一氧源的SnO_x薄膜(记为O₃-SnO_x)具有较优的能级排列;而只有H₂O作氧源的SnO_x薄膜(记为H₂O-SnO_x)具有较高的电导率。而采用O₃和H₂O混合氧源制备的SnO_x(记为MIX-SnO_x),则兼顾了能级匹配和良好的导电性,有效提升器件的PCE,达到20.9%。不仅如此,得益于SnO_x     

前驱体和退火温度对Nd2O3薄膜组分影响的定量研究

采用Nd(thd)₃和O₃作为反应前驱体, 利用先进的原子层淀积方法在P型硅(100)衬底上制备了超薄Nd₂O₃介质膜, 并在N₂气氛下进行了退火处理. 采用X射线光电子能谱仪对薄膜样品组分进行分析. 研究结果表明, 淀积过程中将前驱体温度从175 ℃提高到185 ℃后, 薄膜的质量得到提高, O/Nd 原子比达到1.82, 更接近理想的化学计量比, 介电常数也从6.85升高到10.32.     

管径及气体性质对爆轰极限的影响实验研究

本文在大尺度(D=50.3 mm,63.5 mm)光滑管道内对四种预混气(2H₂+O₂+50%Ar,C₂H₂+2.5O₂+70%Ar,C₂H₂+2.5O₂+85%Ar,CH₄+2O₂)进行了爆轰实验研究;获得了爆轰极限p_c和胞格尺寸λ,分析了四种气体的不稳定性,计算了边界层位移厚度δ^*和诱导长度?_i,深入研究了管径和气体性质对爆轰极限的影响。实验结果表明：随着初始压力和管径的减小,边界层位移厚度增大,边界效应加强,热损失增多,爆轰临界压力变大;大尺度管道内,不稳定性对极限的影响占据主导,因此极限情况下不稳定气(CH₄+2O₂)符合判据λ=πD,稳定气(2H₂+O₂+50%Ar,C₂H_2<...     

稀土（Tb，Gd）掺杂多孔硅的光致发光性能研究

用电化学方法对多孔硅薄膜进行了稀土（Tb，Gd）离子的化学掺杂.利用荧光分光光度计测试了样品的光致发光特性.用扫描电子显微镜研究了薄膜的表面形貌.用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况.结果表明，Tb的掺入显著增强了多孔硅的发光强度，并且发光峰位出现蓝移.这是由于Tb³⁺的4f能级⁵D_{4—⁷F3，⁵D4—⁷F关键词： 多孔硅 稀土掺杂 光致发光}     

合成温度和N2/O2流量比对碳纤维衬底上生长的SnO2纳米线形貌及场发射性能影响

采用化学气相沉积法系统研究了合成温度和N₂/O₂流量对生长在碳纤维衬底上的SnO₂纳米线形貌及场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM), X射线衍射(XRD)及能谱仪(EDS)对产物细致表征, 结果表明, SnO₂纳米线长径比随反应温度的升高而增大; 随N₂/O₂流量比值的增大先增大后变小, 场发射测试表明, 合成温度780 ℃, N₂/O₂流量比为300 : 3 时SnO₂纳米线阵列具有最佳的场发射性能, 开启电场为1.03 V/μm, 场强增加到1.68 V/μm时, 发射电流密度达0.66 mA/cm², 亮度约2300 cd/m².     

多孔硅发光稳定性的改进

采用在热ＨＮＯ₃中对多孔度较低的多孔硅样品进行氧化的方法，我们获得了稳定性和均匀性都较好的多孔硅样品。这是一种不同于快速热氧化且更方便易行的方法。另外还用ＳＥＭ和ＦＴＩＲ对其特性进行了研究。 关键词：     

TiO,O2 和TiO2的分析势能函数及光谱研究

用Gaussian09程序包的密度泛函理论DFT方法,在BP86/6-311++g(d,p)水平上对O₂, TiO和TiO₂ 分子进行了优化.得到该系列分子的基态电子态分别为：O₂(X³Σ_g), TiO(X³Π_g), TiO₂(X¹ A₁), TiO₂分子的稳定构型为C_2v构型. 用Murrell-Sorbie势能函数对TiO和O₂分子的扫描势能点进行拟合, 其扫描点都与四参数Murrell-Sorbie函数拟合曲线符合得很好,在此基础上推导出它们的光谱数据和力常数. 用多体项展开理论导出TiO₂分子的全空间解析势能函数,在固定键角∠OTiO=110.5° 的情况下, R_Ti-O = 0.1652 nm处存在一个深度为15.09 eV的势阱, 表明在该处易形成稳定的TiO₂分子. 关键词： TiO 2和TiO₂')" href="#">O₂和TiO₂ 密度泛函理论 势能函数     

The effect of oxidation on physical properties of porous silicon layers for optical applications

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O₂. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.     

Composition and structure of nanoporous silicon layers with galvanically deposited Fe and Co

The morphology and phase composition of porous silicon with galvanically deposited Fe and Co particles were investigated by ultrasoft X-ray emission spectroscopy, X-ray absorption near-edge structure spectroscopy, and scanning electron microscopy. It is shown that iron uniformly covers the surface of porous silicon, whereas cobalt penetrates into pores in the form of nanoparticles. It is established that iron is present mainly in the Fe₂O₃ phase with an admixture of FeO and Fe₃O₄. Cobalt forms a mixture of phases of metallic Co and Co₂O₃.     

Patterning of porous silicon by metal-assisted chemical etching under open circuit potential conditions

Porous silicon is the most studied Si-based light-emitting material. The potential for the application of porous silicon in optoelectronics and also for chemical or biochemical sensing is high. Therefore, the successful patterning of porous silicon on Si wafers is of great interest. HF-based aqueous solutions containing H₂O₂ as oxidizing agent, in combination with appropriate metal deposition, can supply the necessary current in order to sustain the electrochemical etching of single crystalline Si under no external anodic bias. The H₂O₂ concentration can tune the etching rate of the Si wafers as well as the observed photoluminescence intensity and photon energy. We demonstrate that porous silicon growth can be preferentially initiated at sites where metal (Pt) has been deposited and effectively be confined there, in order to form a well-defined pattern of desired geometry. Conventional DC sputtering using stainless-steel masks was applied in order to test various patterning geometries and lengthscales. Photoluminescence spectroscopy, atomic force and optical microscopy were used in order to characterize the produced porous silicon patterns. This method could be a simple, cost-effective way for the production of porous silicon patterns on Si wafers, which could be used in various fields of application.     

Thermal oxidation temperature dependence of 4H-SiC MOS interface

The thermal oxidation temperature dependence of 4H-silicon carbide (SiC) is systematically investigated using X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. When SiC is thermally oxidized, silicon oxycarbides (SiC_xO_y) are first grown and then silicon dioxide (SiO₂) is grown. It is identified by XPS that the SiO₂ films fall into two categories, called SiC-oxidized SiO₂ and Si-oxidized SiO₂ in this paper. The products depend on thermal oxidation temperature. The critical temperature is between 1200 and 1300 °C. The interface trap density (D_it) of the sample possessing Si-oxidized SiO₂, at thermal oxidation temperature of 1300 °C, is lower than SiC-oxidized SiO₂ at and below 1200 °C, suggesting that a decrease of the C component in SiO₂ film and SiO₂/SiC interface by higher oxidation temperature improves the metal-oxide-semiconductor (MOS) characteristics.     

Backscattering of low-energy (0–8 eV) electrons by a silicon surface

An experimental apparatus and method for investigating elastic and inelastic backscattering (180°) of low-energy (0–8 eV) monoenergetic electrons by a solid surface are described and the first results are presented for the reflection of electrons by samples of pure single-crystalline silicon with a polished surface (Si), doped p-type single-crystalline silicon with a porous surface (Si-p) as well as H₂O and H₂O₂ passivated porous samples, Si-p + H₂O and Si-p + H₂O₂. A structure due to the excitation of surface plasmons has been observed for the first time in the loss spectra. Features corresponding to a resonance excited state of molecular nitrogen adsorbed on the surface of porous silicon have been observed in the constant residual energy spectra. Zh. Tekh. Fiz. 67, 103–108 (May 1997)     

Influence of the semiconductor-oxide interlayer on the AC-behaviour of InSb MOS-capacitors

A detailed model of the kinetic law of silicon wafer oxidation is presented. Emphasis is placed on the term that describes the reaction rate of the oxidation equations. The dependence of the electrochemical nature of the oxidizing agent (O^? and O ₂ ⁼ ions) on the kinetic law of oxide layer formation is shown. Results of the silicon dioxide profils accurately measured by an ionic probe are also reported.     

Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy,transmission electron microscopy,X‐ray absorption spectroscopy and X‐ray photoelectron spectroscopy

The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High‐resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)‐ and (100)‐oriented planes which stabilizes against further oxidation of the particles. X‐ray absorption spectroscopy (XANES) and X‐ray photoelectron spectroscopy (XPS) measurements at the O 1s‐edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled for different times. XANES results reveal the presence of the +4 (SiO₂) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2p XPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub‐oxide, +1 (Si₂O), +2 (SiO) and +3 (Si₂O₃), states are present. The analysis of the change in the sub‐oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.     

X-ray spectral analysis of the interface of a thin Al<Subscript>2</Subscript>O<Subscript>3</Subscript> film prepared on silicon by atomic layer deposition

The extent and phase chemical composition of the interface forming under atomic layer deposition (ALD) of a 6-nm-thick Al₂O₃ film on the surface of crystalline silicon (c-Si) has been studied by depthresolved, ultrasoft x-ray emission spectroscopy. ALD is shown to produce a layer of mixed Al₂O₃ and SiO₂ oxides about 6–8 nm thick, in which silicon dioxide is present even on the sample surface and its concentration increases as one approaches the interface with the substrate. It is assumed that such a complex structure of the layer is the result of interdiffusion of oxygen into the layer and of silicon from the substrate to the surface over grain boundaries of polycrystalline Al₂O₃, followed by silicon oxidation. Neither the formation of clusters of metallic aluminum near the boundary with c-Si nor aluminum diffusion into the substrate was revealed. It was established that ALD-deposited Al₂O₃ layers with a thickness up to 60 nm have similar structure.     

Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching

A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC, the electroless process does not require electrical contact during etching. Rather, platinum metal deposited on the wafer before etching serves as a catalyst for the reduction of a chemical oxidant, which combined with UV illumination injects holes into the valence band, the holes subsequently participating in the oxidation and dissolution of the substrate. The etchant is composed of HF and K₂S₂O₈ in water. Various porous morphologies are presented as a function of etchant concentration, time of etching, and SiC polytype. Wafer quality is of the utmost concern when utilizing the electroless wet etchant, since defects such as stacking faults, dislocations, and micropipes have a large impact on the resulting porous structure. Results of imaging and spectroscopic characterization indicate that the porous morphologies produced in this manner should be useful in producing sensors and porous substrates for overgrowth of low dislocation density epitaxial material.