共查询到20条相似文献,搜索用时 125 毫秒
1.
以B2H6为掺杂剂,采用射频等离子体增强化学气相沉积技术在玻璃衬底上制备p型氢化微晶硅薄膜.研究了衬底温度和硼烷掺杂比对薄膜的微结构和暗电导率的影响.结果表明:在较高的衬底温度下很低的硼烷掺杂比即可导致薄膜非晶化;在实验范围内,随着衬底温度升高薄膜的晶化率单调下降,暗电导率先缓慢增加然后迅速下降,变化趋势与硼烷掺杂比的影响极为相似.最后着重讨论了p型氢化微晶硅薄膜的生长机理.
关键词:
p型氢化微晶硅薄膜
衬底温度
晶化率
电导率 相似文献
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用PECVD薄膜沉积方法,成功地制备了磷掺杂纳米硅(nc-Si:H(P))薄膜.用扫描隧道电镜(STM)、Raman散射、傅里叶变换红外吸收(FTIR)谱、电子自旋共振(ESR)、共振核反应(RNR)技术对掺磷纳米硅进行了结构分析,确认了样品的微结构为纳米相结构.掺磷后膜中纳米晶粒的平均尺寸d减小,一般在25—45nm之间,且排列更加有序.掺磷nc-Si:H膜具有较高的光吸收系数,光学带隙在173—178eV之间,和本征nc-Si:H相同.掺杂nc-Si:H薄膜电导率在10-1关键词: 相似文献
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掺杂和未掺杂氧化锌薄膜的拉曼光谱 总被引:2,自引:0,他引:2
利用拉曼光谱分别对不同衬底上,未掺杂和掺杂以及掺杂浓度不同的ZnO薄膜进行了系统的分析研究。其中ZnO薄膜均由溶胶-凝胶法制得,掺杂源为LiCl。测得的拉曼光谱显示,Pt/Ti/SiO2/Si衬底上生长的ZnO薄膜的拉曼特征峰(437cm-1)的强度明显高于SiO2/Si衬底上ZnO薄膜的拉曼特征峰的强度,说明Pt/Ti/SiO2/Si衬底上ZnO的晶化程度比SiO2/Si上ZnO的晶化程度高;但ZnO拉曼特征峰的位置和半高宽并没有发生变化,说明两种衬底上ZnO薄膜中应力大小没有发生变化。掺Li+后,580cm-1处的峰位向高频方向移动,且掺杂浓度越大频移量越大,说明掺杂已经在不同程度上引起了ZnO晶体中自由载流子浓度的变化。此外,还分析了掺Li+未在很大程度上引起ZnO晶格畸变的原因。 相似文献
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采用化学气相沉积(CVD)技术,以高温高压(HTHP)合成的(100)金刚石和p型(100)Si为衬底制备了硫掺杂和硼-硫共掺杂金刚石薄膜,利用原子力显微镜(AFM)、扫描隧道显微镜(STM)及隧道电流谱(CITS)等手段分析同质和异质外延CVD掺杂金刚石薄膜的结构和性能.结果表明:异Si衬底上CVD金刚石的形核密度低,薄膜表面比较粗糙,粗糙度达到18.5nm;同质HTHP金刚石衬底上CVD金刚石薄膜晶粒尺寸约为10—50nm,表面平整,表面粗糙度为1.8nm.拉曼测试和电阻测量的结果显示,在HTHP金刚
关键词:
金刚石
掺杂
外延 相似文献
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采用等离子体增强化学气相沉积技术,以N2掺入到SiH4和H2的沉积方式,分别在玻璃和N型单晶硅片(100)衬底上制备富硅氮化硅薄膜。通过紫外-可见光吸收光谱、傅里叶变换红外吸收光谱(FTIR光谱)、拉曼光谱和光致发光谱(PL谱)分别表征掺氮硅薄膜材料的带隙、结构及其发光特性的变化。结果表明:在氢气的氛围中,随着氮气流量的增加,氢原子能够对薄膜缺陷起到抑制作用,并使较低的SiH4/N2流量比下呈现富硅态,但却不利于硅团簇的形成。随着氮原子的掺入,Si—N键的含量增大,带隙增大,薄膜内微结构的无序度也增大,薄膜出现了硅与氮缺陷相关的缺陷态发光;随着氮原子进一步增加,出现了带尾态发光,进一步讨论了发光与结构之间的关联。这些结果有助于采用PECVD制备富硅氮化硅对材料发光与结构特性的优化。 相似文献
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掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质 总被引:3,自引:1,他引:2
采用等离子体增强化学气相沉积(PECVD)方法制备含有纳米晶硅的SiO2(NCSO)和含有非晶纳米硅颗粒的氢化非晶氧化硅(a—SiOx:H)薄膜。采用离子注入和高温退火方法将稀土Er掺入含有纳米晶硅(ncSi)和非晶纳米硅(a—n—Si)颗粒的基体中。利用IFS/20HR傅里叶变换红外光谱仪和微区拉曼散射光谱仪研究含有纳米晶硅和非晶纳米硅颗粒的薄膜掺稀土前后的发光特性。结果表明来自Be-Si在800nm的发光强度比来自a—SiOx:H基体中非晶纳米硅的发光强度高近一个数量级,而来自a-SiOx:H在1.54μm的发光强度比NCSO高4倍。还研究了掺铒a-SiOx:H薄膜中Si颗粒和Er^3+的发光强度随退火温度的变化,结合掺铒纳米晶硅和非晶纳米硅薄膜发光强度随Er掺杂浓度变化和Raman散射等的测量结果,进一步明确指出a-Si颗粒在Er^3+的激发中可以起到和nc-Si同样的作用,即作为光吸收介质和敏化剂的作用。 相似文献
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Quan Wang Ran Hu Jianning Ding Liyun Jiang 《Applied Physics A: Materials Science & Processing》2011,105(1):153-159
Thin films of hydrogenated silicon were deposited on glass and single-crystalline silicon substrates using a capacitively
coupled radio-frequency plasma-enhanced vapor-deposition system with the help of direct-current bias stimulation. Micro-Raman
scattering was applied to investigate the microstructure of the thin films obtained. The crystalline volume fraction, X
c, was obtained from the Raman spectra. Microscopic mechanical characterization of the thin films was carried out by nanoindentation
based on the conventional depth-sensing indentation method. An analytical relation between X
c and the elastic modulus was thereby established. The elastic modulus of the film on a glass substrate was found to be lower
than that of the film on a monocrystalline silicon substrate with the same X
c. The grain size of a phosphorus-doped thin film was smaller than that of the intrinsic one, with greater ordering of the
grains and X
c was found to be usually above 40%. A film with boron doping was on the opposite side, with X
c usually below 40%. In the phosphorus-doped, intrinsic, and boron-doped films, the elastic moduli were lower when the X
c values were 45%, 30%, and 15%, respectively. 相似文献
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Nanoindentation was carried out on thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma-enhanced chemical vapor deposition. The composite values of elastic (Young's) modulus, E c, and hardness, H c, of the film/substrate system were evaluated from the load–displacement curves using the Oliver–Pharr approach. The film-only parameters were obtained employing the extrapolation of the depth profiles of E c and H c. Scanning probe microscopy was employed to image the nanoindenter impressions and to estimate the effect of film roughness and material pile-up on the testing results. It was established that the elastic modulus of thin a-Si:H films is in the range 117–131 GPa, which is lower than for crystalline silicon. In contrast, the values of hardness are in the range 12.2–12.7 GPa, which is comparable to crystalline silicon and higher than for hydrogen-free amorphous silicon. It is suggested that the plastic deformation of a-Si:H proceeds through plastic flow and it is the presence of hydrogen in the amorphous matrix that leads to a higher hardness. 相似文献
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为提高微晶硅薄膜的纵向结晶性能, 在甚高频等离子体增强化学气相沉积技术的基础上, 采用过渡参数缓变和两步法相结合的方法在普通玻璃衬底上高速沉积薄膜. 当功率密度为2.1 W/cm2, 硅烷浓度在6%和9.6%之间变化时, 从薄膜方向和玻璃方向测算的Raman晶化率的差异维持在2%以内. 硅烷浓度为9.6%时, 薄膜沉积速率可达3.43 nm/s, 从薄膜方向和玻璃方向测算的Raman晶化率分别为50%和48%, 差异的相对值仅为4.0%. 合理控制过渡阶段的参数变化, 可使两个方向的Raman晶化率差值下降到一个百分点. 表明采用新方法制备薄膜, 不仅可以抑制非晶孵化层的形成, 改善微晶硅薄膜的纵向结构, 还为制备优质薄膜提供了较宽的参数变化空间.
关键词:
微晶硅薄膜
非晶孵化层
高速沉积
甚高频等离子体增强化学气相沉积 相似文献
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采用射频化学气相沉积法,制备了一系列具有不同晶化率n型掺杂层的n-i-p结构微晶硅薄膜太阳电池.发现本征层的结构很大程度上依赖于n型掺杂层的结构,特别是n/i界面处的孵化层厚度以及本征层的晶化率.该系列太阳电池在100 mW/cm2的白光下照射400 h,实验结果证实了本征层晶化率最大(Xc(i)=65%)的电池性能表现出最低的光致衰退率.拥有非晶/微晶过渡区n型掺杂层的电池(本征层晶化率Xc(i)=54%)分别
关键词:
微晶硅
n-i-p结构太阳电池
光致衰退
晶化率 相似文献
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Mechanical properties of thin films on substrates can be evaluated directly through nanoindentation. For a comprehensive study,
thin films should be characterized via Young’s modulus, yield stress and strain-hardening exponent at constant temperature.
In this paper, we evaluate these effects of thin films on silicon substrate through finite element analysis. Thin films, from
soft to hard relative to the silicon substrate, are investigated in three categories: soft films on hard substrates, soft
to hard films on no elastic mismatch substrates, and hard films on soft substrates. In addition to examining the load-displacement
curve, the normalized hardness versus normalized indentation depth is checked as well to characterize its substrate effect.
We found that the intrinsic film hardness can be acquired with indentation depths of less than 12% and 20% of their film thickness
for soft films on hard substrates and for soft to hard films on no elastic mismatch substrates, respectively. Nevertheless,
nanoindentation of hard films on soft substrates cannot determine the intrinsic film hardness due to the fact that a soft
substrate cannot support a hard film. By examining the von Mises stresses, we discovered a significant bending phenomenon
in the hard film on the soft substrate.
PACS 61.43.Bn; 62.20.-x; 68.03.Hj; 68.05.Cf; 68.08.De 相似文献
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Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by plasma enhanced chemical vapor deposition under the various negative substrate bias voltages with hydrogen as a diluent of silane. The microstructure and optical properties of nc-Si:H thin films were studied by Raman scattering spectroscopy, X-ray diffraction (XRD), transmission electron microscopy, and optical transmission spectroscopy. Raman spectra and XRD pattern reveal that applying negative bias voltages at the moderate level favors the enhancement of crystalline volume fraction, increase of crystallite sizes and decrease of residual stress. We also demonstrated that the negative direct current bias can be used to modulate the volume fraction of voids, refractive index, absorption coefficient, compactness and ordered degree of nc-Si:H films. It is found that the film deposited at −80 V shows not only high crystallinity, size of crystallite, and static index n0 but also low residual stress and volume fraction of voids. Furthermore, the microstructural evolution mechanism of nc-Si:H thin films prepared at different bias voltages is tentatively explored. 相似文献
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采用甚高频等离子增强化学气相沉积(VHF-PECVD)的方法制备了硅烷浓度分别为6%和7%, 随激发频率变化(40—70MHz)的氢化微晶硅(μc-Si∶H)薄膜材料.研究了材料的电学特性、 结构特性、沉积速率与激发频率之间的关系.结果发现材料的光敏性随频率的增加先降低后 提高,晶化率和沉积速率的变化趋势与之相反;在晶化率最高点,材料在(220)的晶向衍射 峰最高.并从光发射谱的角度研究了材料结构和沉积速率随频率变化的原因.
关键词:
甚高频等离子增强化学气相沉积
本征微晶硅
激发频率 相似文献
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Tetragonal lead titanate (PbTiO3, PT) thin films are grown on (1 0 0) MgO substrate by pulsed-laser deposition (PLD) for expected applications in integrated optics. The realisation of outstanding and reliable devices into integrated circuits requires sufficient mechanical resistance despite that the obtained PT films display interesting waveguiding properties associated with low optical losses. Two mechanical properties characteristic of elasticity and hardness of PT films are studied. The elastic modulus (E or Young's modulus) and the hardness (H) are measured by the nanoindentation technique. These mechanical properties are correlated to the crystalline quality of PT/MgO thin films. The films show epitaxial relationship with the MgO substrate and the orientation of crystallites perpendicularly to the surface substrate may be the consequence of a growth process along c-axis, a-axis or both. Differences on curves plotting hardness and elastic modulus as a function of indentation depth are observed as the curves are less dispersed for the films mainly c-axis oriented. 相似文献
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The intrinsic and phosphorous (P)-doped hydrogenated amorphous silicon thin films were crystallized by laser annealing. The structural properties during crystallization process can be investigated. Observed redshifts of the Si Raman transverse optical phonon peak indicate tensile stress present in the films and become intense with the effect of doping, which can be relieved in P-doped films by introducing buffer layer structures. Based on experimental results, the established correlation between the stress and crystalline fraction (XC) suggests that the relatively high stress can limit the increase in XC and the highest crystalline fraction is obtained by a considerable stress release. At high laser energy density of 1250 mJ/cm2, the poorer crystalline quality and disordered structure of the film originating from the irradiation damage and defects lead to the low electron mobility. 相似文献