| MOCVD法制备Cu掺杂ZnO薄膜 |
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| 引用本文： | 许露,梁红伟,刘远达,李春野,柳阳,边继明,李国兴,李万程,吴国光,杜国同.MOCVD法制备Cu掺杂ZnO薄膜[J].发光学报,2011,32(9):956-961. |
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| 作者姓名： | 许露 梁红伟 刘远达 李春野 柳阳 边继明 李国兴 李万程 吴国光 杜国同 |
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| 作者单位： | 1. 大连理工大学 物理与光电工程学院, 辽宁 大连 116024;
2. 吉林大学电子与信息工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130023 |
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| 基金项目： | 国家自然科学基金(60976010,10804040,10804014,60877020,11004020,601706045);大连理工大学基本科研业务费(DUT11LK43);辽宁省博士启动基金(20081081)资助项目 |
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| 摘 要： | 通过金属有机物化学气相沉积(MOCVD)设备,在c-Al2 03衬底上生长本征和Cu掺杂ZnO( ZnO∶ Cu)薄膜.X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO∶ Cu样品都呈现出较好的c轴择优取向生长.X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中.利用光致发光(PL)测试对本征ZnO和ZnO∶ C...
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| 关 键 词： | Cu掺杂ZnO MOCVD 蓝紫光发射峰 光致发光 |
| 收稿时间： | 2011-03-08 |
Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition |
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| XU Lu,LIANG Hong-wei,LIU Yuan-da,LI Chun-ye,LIU Yang,BIAN Ji-ming,LI Guo-xing,LI Wan-cheng,WU Guo-guang,DU Guo-tong.Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition[J].Chinese Journal of Luminescence,2011,32(9):956-961. |
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| Authors: | XU Lu LIANG Hong-wei LIU Yuan-da LI Chun-ye LIU Yang BIAN Ji-ming LI Guo-xing LI Wan-cheng WU Guo-guang DU Guo-tong |
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| Institution: | 1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;
2. College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, China |
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| Abstract: | Un-doped and Cu-doped ZnO thin films were grown on c-Al2O3 substrate by metalorganic chemical vapor deposition (MOCVD) system. The way of changing the temperature of Cu(tmhd)2 source bottle was used to change the saturated vapor pressure of Cu (tmhd)2, in the meantime to change the quantity of Cu(tmhd)2 carried into the the reaction chamber. Then the content of Cu in ZnO films was tested to study the effects of Cu doping on the luminescent properties of ZnO, and explore the process technique and condition of controlling Cu valence in ZnO films. X-ray diffraction (XRD) show un-doped ZnO and ZnO:Cu samples have good c-axis preferred orientation growth. The Cu content of these samples were measured by X-ray photoelectron spectroscopy (XPS). The content of Cu in ZnO films were not increased when the Cu(tmhd)2 source temperature was increased, which indicated that increasing the Cu(tmhd)2 source temperature did not lead to any increase of the Cu-doping level, and the solubility of Cu ions in ZnO is quite low. Low-temperature photoluminescence (PL) measurements show a strong and broad blue-violet (BV) light emission peak ranging from 2.8 to 3.3 eV, which could be assigned to donor-acceptor pair (DAP) recombination (between unknown shallow donor level and Cu-related acceptor level). Temperature dependent PL show a red-shift of the BV emission with increasing the temperature from 10 to 180 K, and a new weak shoulder peak appearing at BV emission's high-energy side at 80 K, which could be assigned to eA0. Moreover, the decrease of Cu content in ZnO:Cu film resulted in quenching the intensity of BV emission red-shift of BV emission's peak position. This phenomenon is interesting and rarely reported in the previous works. However, we still need further study to clarify that if it is the electron transition between Zni-related donor energy level and valence band that causes the BV emission. |
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| Keywords: | Cu doped ZnO MOCVD BV emission photoluminescence |
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