n型掺杂层结构对n-i-p型微晶硅电池性能和光致衰退特性的影响

采用射频化学气相沉积法,制备了一系列具有不同晶化率n型掺杂层的n-i-p结构微晶硅薄膜太阳电池.发现本征层的结构很大程度上依赖于n型掺杂层的结构，特别是n/i界面处的孵化层厚度以及本征层的晶化率.该系列太阳电池在100 mW/cm²的白光下照射400 h，实验结果证实了本征层晶化率最大（X_c(i)=65%）的电池性能表现出最低的光致衰退率.拥有非晶/微晶过渡区n型掺杂层的电池（本征层晶化率X_c(i)=54%）分别 关键词： 微晶硅 n-i-p结构太阳电池 光致衰退 晶化率

Influence of n-type layer structure on performance and light-induced degradation of n-i-p microcrystalline silicon solar cells

A series of n-i-p microcrystalline silicon thin film solar cells with different values of crystalline volume fraction X_c of n-type layers are prepared by radio frequency plasma enhanced chemical vapor deposition. It is found that the structure of intrinsic layer is strongly dependent on the structure of n-type layer, especially the incubation layer thickness at n/i interface and X_c of intrinsic layer. This series of solar cells were light-soaked under 100 mW/cm² for 400 h. The experiment results demonstrate that the solar cell with the highest X_c of intrinsic layer (X_c(i)=65%) has the lowest light-induced degradation ratio. Then the solar cell with n-type layer deposited in an amorphous silicon/microcrystalline silicon transition region (X_c(i) =54%) is light-soaked under the irradiations of white light, red light and blue light with the same light intensities, separately. After 400 h light-soaking, the light degradation ratio is only 2% for the red light irradiation, while it is 8% for the blue light irradiation.