Influence of Flexoelectric Effect on Director Alignment of Nematic Liquid Crystals in Axial Arrangement Cylindrical Cells

A positive nematic liquid crystal(5CB) sample is confined in cylindrical cells under strong or weak axial anchoring boundary conditions when a radial nonuniform low-frequency electric field is applied and the flexoelectric effect is taken into account.Based on the Frank elastic free energy,the surface energy of the Rapini–Papoular approximation,the polarization free energy and the flexoelectric free energy caused by electric field,we obtain the free energy density of the nematic and solve the corresponding Euler–Lagrange equation numerically.We investigate the director distribution,the critical voltage and the critical exponent of nematic liquid crystal in cylindrical cells.It follows that the critical exponent is the classical one.It is also shown that the critical voltage in the system is affected by the flexoelectric effect,the geometric effect and radial weak anchoring effect on the cylindrical surfaces.A new type of director transition caused by the flexoelectric effect,the dielectric coupling effect and the radial weak anchoring effect is found.     

LEC法生长富磷掺铁InP单晶晶格应变与残留应力研究

运用原位磷注入合成法在高压单晶炉内合成富磷的InP熔体,并利用液封直拉法(LEC)生长出了3英寸富磷掺Fe的InP单晶.运用高分辨率X射线衍射技术、偏振差分透射谱测试技术、光致荧光谱技术对富磷掺Fe的InP晶片进行了结构、应力及发光特性测试.结果表明,晶格的应变导致了PL发光峰峰位的变化,晶格应变与残留应力测试结果相一致,说明材料生长过程中的热应力是导致样品晶格常数分布不均匀的主要因素.     

非掺杂半绝缘LECGaAs的光电流谱

研究了非掺杂半绝缘ＬＥＣＧａＡｓ的非本征室温（３００Ｋ）光电流谱,在０．４－０．７０９ｅＶ范围发现了一个光响应响应宽带Ｍ１。Ｍ１带在０．４６、０．４９、０．５６、０．６５和０．６９ｅＶ处出现五个峰,其中０．４６、０．４９、０．５６和０．６９ｅＶ峰的起始阈值分别为０．４４、０．４７、０．５１和０．６７ｅＶ。本文讨论了Ｍ１带的起源,提出了０．４４、０．４７和０．５１ｅＶ光电阈值与铜受主,ＥＬ３和氧施主     

几百兆电子伏特/核子能区原子核诱发乳胶核反应靶核蒸发碎片前后发射研究（英文）

对150 AMeV 4He-AgBr,290 AMeV 12C-AgBr,400 AMeV 12C-AgBr,400 AMeV 20Ne-AgBr及500 AMeV 56Fe-AgBr作用靶核蒸发碎片在反应前后半球内的多重数分布、多重数矩、标度方差、熵及约化熵分别进行了分析。实验结果表明,靶核蒸发碎片在前后半球内的多重数分布可以用高斯分布来描述。在前后半球内的多重数分布矩分别随秩数的增加而增加,且前后半球内多重数分布二阶矩与反应类型及束流能量无关。对于所有研究的核反应,其标度方差（一个直接描述多重数涨落的变量）值接近于1,表明在前后半球内靶核蒸发的发射存在较弱的关联。在前后半球内靶核蒸发碎片发射过程中的熵及约化熵在实验误差范围内与反应系统无关。The multiplicity distribution,multiplicity moment,scaled variance,entropy and reduced entropy of target evaporated fragments emitted in forward and backward hemispheres in 150 AMeV 4He-AgBr,290 AMeV 12C-AgBr,400 AMeV 12C-AgBr,400 AMeV 20Ne-AgBr and 500 AMeV 56Fe-AgBr interactions are investigated.It is found that the multiplicity distribution of target evaporated fragments emitted in both forward and backward hemispheres can be fitted by a Gaussian distribution.The multiplicity moments of target evaporated particles emitted in the forward and backward hemispheres increase with the order of the moment q,and the second-order multiplicity moment is energy independent over the entire energy range for all the interactions in the forward and backward hemisphere.The scaled variance,a direct measure of multiplicity fluctuations,is close to one for all the interactions,which indicate a weak correlation among the target evaporated fragments.The entropy of target evaporated fragments emitted in forward and backward hemispheres are the same respectively for all of the interactions,within experimental errors.     

电感耦合等离子体发射光谱法测定钢铁中的磷

探讨电感耦合等离子体发射光谱法测定钢铁中磷的方法。试验确定了微波消解器处理样品的条件、仪器最佳工作参数,研究了共存元素谱线的干扰情况。该法能够准确、快速地测定钢铁样品中0.010％～0.20％范围内的磷,测定结果的相对标准偏差RSD<5％,回收率为98％～104％。     

Triton X-100对染料敏化太阳电池性能影响的研究

采用无水相体系的胶体通过丝网印刷工艺制备TiO2薄膜电极,研究发现曲拉通(TritonX-100)可以明显改变TiO2电极显微结构,且对染料敏化太阳电池的性能影响显著.过少或过多的曲拉通都将导致开路电压、短路电流、填充因子以及效率的降低.由3gP25粉末配制的胶体中,曲拉通适宜的加入量约为0.8mL.     

GaAs中碳受主局域振动模的非简谐性对主吸收带的影响

在ＧａＡｓ中碳受主局域振动模主吸收带低能侧,观察到一个吸收边带,其峰频率与局域振动模吸收主带的峰频率之差为３５ｃｍ＾－１。该边带的积分面积随温度变化,并影响主吸收带积分布积的温度关系。该边带可能起因于局域振动模自身的非简谐性。     

P型ZnO薄膜的制备及其在太阳电池中的初步应用

利用超声雾化热分解技术(USP)、通过N-Al共掺的方法,在coming 7059衬底上生长出P型透明导电膜.该薄膜在可见光范围内的透过率可达到90;以上.X射线衍射的测试结果表明:P型透明导电膜具有c轴择优生长特性.通过霍耳测试得到P型ZnO薄膜的电学特性为:电阻率为4.21 Ω·cm、迁移率是0.22 cm2/(V·s)、载流子浓度为6.68×1018cm-3.此材料初步应用到微晶硅电池中,其开路电压为0.47 V.     

宽带隙化合物半导体Zn1-xMgxO薄膜的制备

利用超声雾化热分解技术,在玻璃衬底上生长出宽带隙的Zn1-xMgxO薄膜.所有样品在可见光范围内的透过率可达到85;以上.X射线衍射的测试结果表明所有样品都具有c轴择优生长特性,并且随薄膜中Mg含量的不同出现规律性变化.光致发光谱表明Mg掺入后ZnO薄膜的紫外发射峰出现了蓝移,实现了对禁带宽度的调节.