| (111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究 |
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| 引用本文： | 郑分刚,陈建平,李新碗.(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究[J].物理学报,2006,55(6):3067-3072. |
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| 作者姓名： | 郑分刚 陈建平 李新碗 |
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| 作者单位： | (1)上海交通大学区域光纤通信网与新型光通信系统国家重点实验室，上海 200030; (2)苏州大学物理科学与技术学院，苏州 215006;上海交通大学区域光纤通信网与新型光通信系统国家重点实验室，上海 200030 |
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| 基金项目： | 国家自然科学基金(批准号：90204006,60377013,10204016)和国家863计划(批准号:2002AA122022)资助的课题. |
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| 摘 要： | 选用不同浓度的Pb(Zr0.52Ti0.48)O3溶胶，用Sol-gel法在Pt/Ti/SiO2/Si基片上沉积一层厚度不同的Pb(Zr0.52Ti0.48)O3 (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr0.52Ti0.48)O
关键词：
PZT铁电薄膜
择优取向
过渡层
剩余极化强度
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| 关 键 词： | PZT铁电薄膜 择优取向 过渡层 剩余极化强度 |
| 文章编号： | 1000-3290/2006/55（06）/3067-06 |
| 收稿时间： | 12 8 2005 12:00AM |
| 修稿时间： | 2005-12-082005-12-14 |
Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by sol-gel method |
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| Zheng Fen-Gang,Chen Jian-Ping and Li Xin-Wan.Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by sol-gel method[J].Acta Physica Sinica,2006,55(6):3067-3072. |
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| Authors: | Zheng Fen-Gang Chen Jian-Ping and Li Xin-Wan |
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| Institution: | 1.Department of Physics, Suzhou University, Suzhou 215006, China; 2.The State Key Laboratory on Fiber-Optic Local Area Network and Advanced Optical Communication Systems, Shanghai Jiao Tong University, Shanghai 200030, China |
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| Abstract: | Highly (111)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films with a variety of PZT buffer layer thickness were prepared by spin coating on Pt/Ti/SiO2/Si substrates with Sol-Gel process. The thickness of PZT buffer layer was found to play a significant role on grain size and orientation of Pb(Zr0.52Ti0.48)O3 films. With the increasing of PZT buffer layer thickness, both crystallization and orientation were improved obviously. High dielectric constant (1278, 1kHz, for 28nm buffer), low dielectric loss (0.023, 1kHz, for 28nm buffer), symmetric C-V characteristics and P-E curves were obtained. Hysteresis measurements show that the remnant polarization and coercive field of the films reach 43μC·cm-2 and 78kV·cm-1, respectively. |
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| Keywords: | PZT thin film preferred orientation buffer layer remnant polarization |
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