| CaCu3Ti4O12块材和薄膜的巨介电常数 |
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| 引用本文： | 赵彦立,焦正宽,曹光旱.CaCu3Ti4O12块材和薄膜的巨介电常数[J].物理学报,2003,52(6):1500-1504. |
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| 作者姓名： | 赵彦立 焦正宽 曹光旱 |
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| 作者单位： | (1)浙江大学物理系，杭州 310027; (2)浙江大学物理系，杭州 310027;台州学院物理系，临海 317000 |
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| 基金项目： | 国家重点基础研究专项经费和国家自然科学基金(批准号：10274070)资助的课题. |
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| 摘 要： | 用固相反应法和脉冲激光沉积(PLD)制备了CaCu3Ti4O12块材和薄膜，获得了相对介电常数ε′（1kHz,300K)高于14000的介电特性，是目前该体系最好的结果.报道了(00l)取向高质量CaCu3Ti4O12外延薄膜及其介电性质.C aCu3Ti4O12相对介电常数ε′在100—300K温度范围 内
关键词：
3Ti4O12')" href="#">CaCu3Ti4O12
巨介电常数
PLD
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| 关 键 词： | CaCu3Ti4O12 巨介电常数 PLD |
| 文章编号： | 1000-3290/2003/52(06)/1500-05 |
| 收稿时间： | 2002-07-12 |
| 修稿时间： | 2002年7月12日 |
High dielectric constant in CaCu3Ti4O12 bulk an d thin films |
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| Zhao Yan-Li,Jiao Zheng-Kuan and Gao Guang-Han.High dielectric constant in CaCu3Ti4O12 bulk an d thin films[J].Acta Physica Sinica,2003,52(6):1500-1504. |
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| Authors: | Zhao Yan-Li Jiao Zheng-Kuan and Gao Guang-Han |
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| Abstract: | CaCu3Ti4O12 bulk and thin films are prepared su ccessfully by solid-state reaction and pulsed laser deposition (PLD). Dielectric constants ε′ (1kHz,300K) higher than 14000 are found in both types of CaCu3Ti4< /sub>O12 materials, which is the best result in this system. We first report the c-axis-oriented epitaxial CaCu3Ti4O12 thin film and i ts dieletric properties.Such a high dielectric constant does not depend much upon temperature in the range of 100-300K,showing that this material has high thermal stability.The behaviour of dielectric conductivity σd against frequency can be well ex plained in terms of the hopping mechanism. |
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| Keywords: | CaCu3Ti4O12 high dielectric constant PLD |
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