TiN和Ti1-xSixNy薄膜的微观结构分析

使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜（AFM）多种观测手段分析了TiN薄膜和Ti_1-xSi_xN_y纳米复合薄膜的微观结构.实验分析证明Ti_1-xSi_xN_y薄膜是由直径为3—5nm的纳米晶TiN和非晶Si₃N₄相构成，并且Ti_1-xSi_{x关键词： 纳米复合薄膜 自由能 表面粗糙度 TiN 1-x}Si_xN_y')" href="#">Ti_1-xSi_xN_y     

双掺杂BaxAgyCa3-x-yCo4O9氧化物的织构与电输运性能

采用柠檬酸溶胶凝胶和放电等离子烧结制备了Ca位双掺杂型的Ba_xAg_yCa_3-x-yCo₄O₉烧结体,利用X射线衍射仪、扫描电子显微镜、电阻率测试仪等研究了烧结体相组成、取向度、织构及电性能.结果表明：含Ag的掺杂试样中出现了偏离化学计量比分布的Ag单质,掺杂试样取向度随Ba与Ag掺杂量之比x/y的增大而提高,含Ag的掺杂试样取向度低于未掺杂试样,不含Ag的掺杂试样取向度高于未掺杂试样.x=y=01的试样导电机理发生变化.Ba,Ag掺杂量相等的试样保持较低取向度的同时具有较低的电阻率,在973 K时达到最低值（73 mΩcm）,而取向度最低的Ag单掺杂试样电阻率在所有试样中最低,在973 K时为63 mΩcm. 关键词： 3Co₄O₉')" href="#">Ca₃Co₄O₉ 双掺杂 织构 电输运性能     

纤维状TiO2/Bi2O3光催化剂的制备及其光催化性能

以C₁₆H₃₆O₄Ti和Bi(NO₃)·5H₂O为原料,以棉花纤维为生物模板,合成了系列纤维状TiO₂/Bi₂O₃光催化剂．采用XRD、SEM、UV-Vis等测试技术对样品的相结构、形貌和吸光性能等进行了表征分析．结果表明,样品中的Bi₂O₃为单斜相和四方相共存的混晶,纤维长度达到毫米级,     

针状纳米MnxNi0.5-xZn0.5Fe2O4的共沉淀法制备及表征

通过在碱液中共沉淀Mn²⁺、Ni²⁺和Fe²⁺后制备了棒状的前躯体,前躯体于不同温度煅烧后制得了Mn_xNi_0:5-xZn_0:5Fe₂O₄棒状体. 利用X射线衍射仪和透射电镜对棒状体的物相、形貌及粒径进行了表征,并利用振动样品磁强计对磁性能进行研究. 结果表明长径比大于15的棒状,随着x值的增加,Mn_xNi_0:5-xZn_0:5Fe₂O₄样品的直径增加,长度下降,长径比变小,当x=0.5时其直径在50 nm左右而长径比减小到7～8. 随着x值的增加,样品的矫顽力先增加后减少,x值达到0.4时样品的矫顽力再次增加,当煅烧温度为600 oC,x=0.5时样品的矫顽力最大为134.3 Oe. 饱和磁化强度随着x值的增加先增加后减少,当煅烧温度为800 oC和x=0.2时达到最大为68.5 Oe.     

Crystallization of Ge2Sb2Te5 phase—change optical disk media

In this paper, the crystallization behaviour of amorphous Ge₂Sb₂Te₅ thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge₂Sb₂Te₅ thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, E_a, is 2.25eV. The crystallization dynamics for Ge₂Sb₂Te₅ thin films obeys the law of nucleation and growth reaction. The sputtered Ge₂Sb₂Te₅ films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge₂Sb₂Te₅ phase-change optical disk.     

Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

在溶胶-凝胶工艺获得高质量Bi₄Ti₃O₁₂薄膜的基础上 ，制备了Ag/Bi₄Ti₃O₁₂栅n沟道铁电场效应晶体管. 研 究了Si基Bi₄Ti₃O₁₂薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明，在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi₄Ti₃O₁₂ 铁电薄膜并有利于改善Bi₄Ti₃O₁₂/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd}-V_G)特性曲线显示Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应. 关键词： 铁电场效应晶体管 4}Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 存储 特性 溶胶-凝胶工艺     

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.     

具有介孔结构的MnSiO3@Fe3O4@C纳米粒子的制备以及作为pH响应的T1-T2*双模MRI造影剂的研究应用

本文通过一个简单的、温和的方案制备了平均尺寸为120 nm,介孔结构的纳米粒子MnSiO₃@Fe₃O₄@C. 粒子的细胞毒性微小,可以用作T₁-T₂^*双模MRI造影剂. 酸性条件下MnSiO₃@Fe₃O₄@C释放出大量的Mn²⁺缩短T₁弛豫时间,提高成像分辨率. 超顺磁性的Fe₃O₄可以增强T₂对比成像,检测病变组织. 类似于肿瘤微环境/细胞器的酸性PBS(pH=5.0)中Mn²⁺的释放率达到31.66%,约为中性条件(pH=7.4)下的7倍. 释放的Mn²⁺通过内吞作用被细胞摄取,经肾脏排出,细胞毒性实验表明,MnSiO₃@Fe₃O₄@C具有低的细胞毒性,即使高浓度的200 ppm MnSiO₃@Fe₃O₄@C对HeLa细胞的毒性也相对较小. 对荷瘤小鼠静脉注射定量MnSiO₃@Fe₃O₄@C后,可以观察到一个快速增强的对比成像,给药24 h后,T₁MRI信号显著增强,达到132%,而T₂信号则明显降低至53.8%,活体MR成像证明了MnSiO₃@Fe₃O₄@C可以同时作为阳性和阴性造影剂. 此外,得益于介孔MnSiO₃优秀的酸敏感性,MnSiO₃@Fe₃O₄@C可以作为一种潜在的药物载体,实现肿瘤的诊疗一体化.     

Na0.25K0.25Bi0.5TiO3无铅压电陶瓷的介电特性研究

用固相反应法制备了Na_0.25K_0.25Bi_0.5TiO₃ (NKBT50)陶瓷，研究了该陶瓷在室温至400℃温度范围内的介电性能.发现该陶瓷的介电温谱与烧结气氛、极化状态有关.在空气中烧结的未极化样品在70℃附近存在介电和损耗峰，而极化后及在氧气氛中烧结的样品并不存在该介电、损耗峰.分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关.热激电流显示，陶瓷的去极化温度为225℃，与此相对应的介电、损耗峰也 关键词： 介电性能 氧空位 极化弛豫 钛酸铋钠钾     

The optical properties of MgxZnl-xO thin films

Mg_xZn_1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of Mg_xZn_1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760\,nm at the incident angle of 70℃. Both absorption coefficients and optical band gaps of Mg_xZn_1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of Mg_xZn_1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important information for the design and modelling of ZnO/ Mg_xZn_1-xO heterostructure optoelectronic devices.     

分子动力学模拟不同组分下CaO-Al2O3-SiO2系玻璃微观结构的转变

采用分子动力学模拟的方法研究了CaO-Al₂O₃-SiO₂系玻璃的微观结构，发现Ca/Al=1/2时CaO-Al₂O₃-SiO₂系玻璃(网硅酸盐体系)并不像传统理论认为的那样是一个完整的三维网络，而是存在一定量的非桥氧，从而从理论上进一步证实了Stebins等人的实验结果.同时也发现不同的Ca/Al比对Si和Al键接方式产生重要影响，在Ca/Al>1/2时，Al比Si容易成为网络的中间体，其首先插入网络体中间；在Ca/Al<1/2时，Si比Al容易成为网络中间体.虽然在能量上Al—O—Si占有扰势，但当Ca/Al从大于1/2变化到小于1/2时，仍有部分Al—O—Si转变成Al—O—Al和Si—O—Si，丰富了Al自回避规则的内容. 关键词： 2O₃-SiO₂')" href="#">CaO-Al₂O₃-SiO₂ 玻璃 微观结构 分子动力学     

Zn0.04Cd0.96Te中深能级的红外光电导谱研究

应用红外光电导谱研究半绝缘p型Zn_0.04Cd_0.96Te中的深能级,在温度从4.2到165K范围内,观察到了位于0.24,0.34,0.38,0.47,0.55和0.80eV处6个光电导响应峰.结合4.2K下光致发光谱的测量结果以及对Zn_xCd_1-xTe中深能级发光光谱、深能级瞬态谱等已有的研究结果,对这些响应峰对应的深能级特性进行了讨论 关键词： xCd_1-xTe')" href="#">Zn_xCd_1-xTe 光电导 杂质 深能级     

高比表面积TiO2与g-C3N4复合材料的光催化性能及机理研究

本文通过简单的溶剂热法制备了g-C₃N₄与高比表面积的TiO₂复合材料,该方法操作简单且能耗低. 甲基橙降解实验结果表明,高比表面积的TiO₂有效提高了光催化活性. 光电化学测试结果表明,与g-C₃N₄复合后,TiO₂的电荷载流子迁移速率得到明显改善. g-C₃N₄/高比表面积-TiO₂的光催化活性很强,在100分钟内,6%-g-C₃N₄/高比表面积-TiO₂对甲基橙的降解程度可达92.44%. 6%-g-C₃N₄/高比表面积-TiO₂不仅具有良好的光催化降解性能,还具有较高的稳定性. 本文对6%-g-C₃N₄/高比表面积-TiO₂的光催化机理也进行了系统的研究.     

低成本溶胶-凝胶法制备SiO2/TiO2双层膜的减反射与自清洁性能

将玻璃基底依次在低成本的SiO₂溶胶和TiO₂溶胶中浸渍后,在500 oC下煅烧制备了同时具备减反射与自清洁性能的SiO₂/TiO₂双层膜．该膜的光学性能与结构特征分别通过紫外-可见分光光度计和场发射扫描电镜进行了表征．同时,源于超亲水性和光催化作用的自清洁性能也凸显出来．实验结果表明制备SiO₂/TiO₂双层膜对光的透射率最高可达到95%,同时具备自清洁性能．     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃     

Elastic constants and thermodynamic properties of Mg2SixSn1-x from first-principles calculations

<正>This paper stuides the elastic constants and some thermodynamic properties of Mg₂Si_xSn_n-1（x=0,0.25,0.5, 0.75,1） compounds by first-principles total energy calculations using the pseudo-potential plane-waves approach based on density functional theory,within the generalized gradient approximation for the exchange and correlation potential. The elastic constants of Mg₂Si_xSn_n-1 were calculated.It shows that,at 273 K,the elastic constants of Mg₂Si and Mg₂Sn are well consistent with previous experimental data.The isotropy decreases with increasing Sn content.The dependences of the elastic constants,the bulk modulus,the shear modulus and the Debye temperatures of Mg₂Si and Mg₂Si_0.5Sn_0.5 on pressure were discussed.Through the quasi-harmonic Debye model,in which phononic effects were considered,the specific heat capacities of Mg₂Si_xSn_1-x at constant volume and constant pressure were calculated.The calculated specific heat capacities are well consistent with the previous experimental data.     

Effect of heat treatment on electronic phase in underdoped La2-xSrxCuO4 single crystal

Superconducting La1.937Sr0.063CuO4 crystals grown by the travelling-solvent floating-zone technique were thermally treated under various temperatures and oxygen pressures for moderately adjusting the oxygen content. The response of intrinsic electronic property of the crystals to the change of hole density in La2-xSrxCuO4 in the vicinity of the magic doping of x= 1/16 （= 0.0625） is studied in detail by magnetic measurements under various fields up to 1 T. It is found that when the superconducting critical temperature （Tc） increases with the oxygen content, there appears also a new subtle electronic state that can be detected from the differential curves of diamagnetic susceptibility dx/dT of the crystal sample. In contrast with the intrinsic state, the new subtle electronic state is very fragile under the magnetic fields. Our results indicate that a moderate change in oxygen doping does not significantly modify the intrinsic electronic state originally existing at the magic doping level.     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si_1-xGe_x合金半导体材料中C_iC_s缺陷的性质进行探讨,同时也对比调查了C_iO_i缺陷在Si和Si_1-xGe_x合金中的性质. 在不同Ge含量的Si_1-xGe_{x关键词： 1-x}Ge_x合金')" href="#">Si_1-xGe_x合金 从头计算法 iC_s缺陷')" href="#">C_iC_s缺陷 iO_i缺陷')" href="#">C_iO_i缺陷     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si_1-xGe_x合金半导体材料中C_iC_s缺陷的性质进行探讨，同时也对比调查了C_iO_i缺陷在Si和Si_1-xGe_x合金中的性质. 在不同Ge含量的Si_1-xGe_{x相似文献}   

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺，制备了钼掺杂铁电陶瓷样品SrBi₄Ti₄O₁₅(SBTi)铁电陶瓷SrBi_4-2x/3Ti_4-xMo_xO₁₅(x=0.00，0.003，0.012，0.03，0.06，0.09).X射线衍射的结果表明，样品均为单一的层状钙钛矿结构相，Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现，样品晶粒为片状，随掺杂量的增加，晶粒逐 关键词： 4Ti₄O₁₅')" href="#">SrBi₄Ti₄O₁₅ Mo掺杂 剩余极化 居里温度