| Crystallization of Ge2Sb2Te5 phase—change optical disk media |
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| 引用本文： | 刘波,阮昊,干福熹.Crystallization of Ge2Sb2Te5 phase—change optical disk media[J].中国物理 B,2002,11(3):293-297. |
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| 作者姓名： | 刘波 阮昊 干福熹 |
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| 作者单位： | Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China |
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| 基金项目： | Project supported by the Shanghai Applied Physics Centre and the National Natural Science Foundation of China (Grant No. 59832060). |
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| 摘 要： | In this paper, the crystallization behaviour of amorphous Ge2Sb2Te5 thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge2Sb2Te5 thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, Ea, is 2.25eV. The crystallization dynamics for Ge2Sb2Te5 thin films obeys the law of nucleation and growth reaction. The sputtered Ge2Sb2Te5 films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge2Sb2Te5 phase-change optical disk.
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| 关 键 词： | GaSb2Te5薄膜 光盘介质 X射线衍射 |
| 收稿时间： | 2001-09-12 |
Crystallization of Ge2Sb2Te5 phase-change optical disk media |
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| Liu Bo,Ruan Hao and Gan Fu-Xi.Crystallization of Ge2Sb2Te5 phase-change optical disk media[J].Chinese Physics B,2002,11(3):293-297. |
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| Authors: | Liu Bo Ruan Hao and Gan Fu-Xi |
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| Institution: | Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China |
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| Abstract: | In this paper, the crystallization behaviour of amorphous Ge2Sb2Te5 thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge2Sb2Te5 thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, Ea, is 2.25eV. The crystallization dynamics for Ge2Sb2Te5 thin films obeys the law of nucleation and growth reaction. The sputtered Ge2Sb2Te5 films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge2Sb2Te5 phase-change optical disk. |
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| Keywords: | Ge2Sb2Te5 phase-change initialization face-centred-cubic |
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