Co掺杂Bi5Ti3FeO15多铁陶瓷的磁电性能

采用了传统的固相烧结工艺制备出Bi₅Fe_1-xCo _{x Ti3O15(BFCT-x,x=0.0—0.6)多铁陶瓷样品,研究了Co掺杂对Bi5FeTi3O15(BFTO)微观结构、铁电和磁性能的影响.X射线衍射谱显示样品均已形成四层铋系层状钙钛矿相,且随着掺杂量的增加发生了结构变化.拉曼光谱进一步证实掺入的Co占据了< 关键词： 固相烧结 多铁陶瓷 剩余磁化 剩余极化}     

The doping effects of BiFe1-xCoxO3 （x=0.0-0.8） in layered perovskite BiaTi3O12 ceramics

BisFe1-xCoxTi3O15 （x=0.0, 0.2, 0.4, 0.5, 0.6, and 0.8） multiferroic ceramics are synthesized in two steps using the solid state reaction technique. X-ray diffraction patterns show that the samples have four-layer Aurivillius phases. At room temperature （RT）, the samples each present a remarkable coexistence of ferromagnetism （FM） and ferroelectricity （FE）. The remnant polarization （2Pr） reaches its greatest value of 14 gC/cm2 at x = 0.6. Remnant magnetization （2Mr） first increases and then decreases, and the greatest 2Mr is 7.8 menu/g when x = 0.5. The magnetic properties for x = 0.4 are similar to those for x = 0.6, indicating that the magnetic properties originate mainly from the coupling between Fe3＋ and Co3＋ ions, rather than from their own magnetic moments.     

The doping effects of BiFe_1-xCo_xO₃（x=0.0-0.8） in layered perovskite Bi₄Ti₃O₁₂ ceramics

Bi5Fe1-xCoxTi3O15(x = 0.0, 0.2, 0.4, 0.5, 0.6, and 0.8) multiferroic ceramics are synthesized in two steps using the solid state reaction technique. X-ray diffraction patterns show that the samples have four-layer Aurivillius phases. At room temperature (RT), the samples each present a remarkable coexistence of ferromagnetism (FM) and ferroelectricity (FE). The remnant polarization (2P r ) reaches its greatest value of 14 μC/cm 2 at x = 0.6. Remnant magnetization (2M r ) first increases and then decreases, and the greatest 2M r is 7.8 menu/g when x = 0.5. The magnetic properties for x = 0.4 are similar to those for x = 0.6, indicating that the magnetic properties originate mainly from the coupling between Fe 3+ and Co 3+ ions, rather than from their own magnetic moments.     

Multiferroic properties of sol-gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi 5 FeTi 3 O 15 thin films (BFCT-x,Bi 5 Fe 1-x Co x Ti 3 O 15) were prepared using a sol-gel technique.XRD patterns confirm their single phase Aurivillius structure,and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12.The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films.The remanent magnetization (M r) first increases and reaches the maximum value of 0.42 emu/cm 3 at x=0.12 due to the possible Fe 3+-O-Co 3+ ferromagnetic coupling.When x=0.25,the M r increases again because of the dominant Fe 3+-O-Co 3+ ferromagnetic coupling.The remanent polarization (2P r) of BFCT-0.25 was measured to be as high as 62 μC/cm 2,a 75% increase when compared with the non-doped BFCT-0 films.The 2P r remains almost unchanged after being subjected to 5.2 × 10 9 read/write cycles.Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.     

Nd含量对Bi_(6-x)Nd_xFe_(1.4)Ni_(0.6)Ti_3O_(18)多晶材料多铁性的影响

采用柠檬酸-硝酸盐法制备了Bi_(6-x)Nd_xFe_(1.4)Ni_(0.6)Ti_3O_(18)(BNFNT-x,x=0.00,0.10,0.20,0.25和0.30)前驱液,再经过干燥、烧结过程制备了单相多晶材料.研究发现,少量Nd掺杂有助于提高样品的铁电性能,BNFNT-0.25样品的铁电性能(2Pr)最大,约达到19.7μC/cm~2.室温下BNFNT-0.20样品磁性能(2Ms)最大约达到4.132 emu/g(1 emu/g=10–3 A·m~2/g).变温介电损耗结果表明Nd掺杂降低了Fe~(3+)和Fe~(2+)间的电子转移或跃迁的激活能.X射线光电子能谱结果表明小量Nd掺杂有助于增强Bi离子稳定性,对改善样品的铁电性能有积极意义.     

Dy掺杂对Sr2Bi4Ti5O18铁电陶瓷性能的影响

用传统固相烧结法制备了Sr₂Bi_4-xDy_xTi₅ O₁₈(SBDT-x, x=0—0.20)陶瓷样品. x射线衍射分析表明, 微量的Dy掺杂没有影 响Sr₂Bi₄Ti₅O₁₈(SBTi) 原有的层状钙钛 矿结构. 通过研究样品的介电特性, 发现Dy掺杂减小了材料的损耗因子, 降低了样品铁电- 顺电相转变的居里温度. 铁电性能测量结果表明, 随Dy含量的增加, SBDT-x系列样品的剩余 极化先增大, 后减小. 当Dy掺杂量为0.01时, 剩余极化达到最大值, 约为20.1 μC·cm^-2. 掺杂引起剩余极化的变化, 与材料中缺陷浓度、内应力以及晶格畸变程度等因 素有关, 是多种作用机理相互竞争的结果. (Bi₂O₂)²⁺ 层通常被看作是绝缘层和空间电荷库, 对材料的铁电性能起关键作用. 掺杂离子进入(Bi2O₂)²⁺层会导致铁电性能变差. 关键词： 2Bi₄Ti₅O₁₈陶瓷')" href="#">Sr₂Bi₄Ti₅O₁₈陶瓷 Dy掺 杂 铁电性能 居里温度     

(Bi, La)4Ti3O12-Sr(Bi, La)4Ti4O15共生结构铁电材料性能研究

采用固相烧结工艺,制备了不同La掺杂量(x=0.00,0.25,0.50,0.75,1.00,1.25和1.50)的(Bi, La)4Ti3O12-Sr(Bi, La)4Ti4O15 (SrBi8-xLaxTi7O27)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析,并测量铁电、介电性能.结果发现,La掺杂未改变Bi4Ti3O12-SrBi4Ti4O15共生结构铁电材料的晶体结构.随掺杂量的增加,样品的矫顽场(Ec)略有增加,剩余极化(2Pr)先增大,后减小.在x＝0.50时,2Pr达到极大值,为25.6 μC*cm-2,与Bi4Ti3O12-SrBi4Ti4O15相比,2Pr增加了近60%,而Ec仅增加约10%.随La掺杂量的增加,样品的居里温度TC逐渐降低,x＝0.50时,TC=556 ℃.在x=1.50时,样品出现弛豫铁电体的典型特征.     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺,制备了钼掺杂铁电陶瓷样品SrBi4Ti4O15(SBTi)铁电陶瓷SrBi4-2x/3Ti4-xMoxO15(x=0.00,0.003,0.012,0.03,0.06,0.09).X射线衍射的结果表明,样品均为单一的层状钙钛矿结构相,Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现,样品晶粒为片状,随掺杂量的增加,晶粒逐渐变小.铁电测量表明,Mo掺杂使SBTi的铁电性能得到较大改善.随掺杂量x的增加,样品的剩余极化(2Pr)呈现出先增大,后减小的规律.在x=0.06时,2Pr达到最大值26.5 μC/cm2,与SrBi4TiO15(2Pr=12.2 μC/cm2)相比,提高117%.材料的矫顽场Ec在掺杂后增加仅为20%左右.SBTi的居里温度受掺杂的影响甚微,说明Mo对SrBi4Ti4O15的掺杂基本未影响材料原有的良好的热稳定性.     

Co含量对Bi6Fe2-xCoxTi3O18样品多铁性的影响

用固相工艺制备了Bi₆Fe_2-xCo_xTi₃O₁₈ (BFCT-x, x=0, 0.2, 0.6, 0.8, 1.0, 1.2, 1.6, 1.8, 和2.0)多铁陶瓷样品, 样品X射线谱分析发现, 随着Co含量的增加, 样品晶格常数出现了先增大后减小的变化. 室温下, BFCT-0.6样品呈现出相对较高的饱和磁化强度, 2M_s约为4.49 emu/g, BFCT-1.0具有最高的剩余磁化强度, 2M_r约为0.89 emu/g. Co含量在0.2 ≤x≤qslant 1.2范围内, 随着Co含量的增加样品顺磁–铁磁相变温度从752 K降至372 K. 小量的Co改善了样品的铁电性能, 当x=0.6时样品样品的铁电性能最佳, 随着含量增大样品铁电性能下降, 但当x >1.2时样品的铁电性能又得到了改善.     

Multiferroic properties of solben gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi₅FeTi₃O₁₅ thin films (BFCT-x, Bi₅Fe_1-xCo_xTi₃O₁₅) were prepared using a sol—gel technique. XRD patterns confirm their single phase Aurivillius structure, and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12. The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films. The remanent magnetization (M_r) first increases and reaches the maximum value of 0.42 emu/cm³ at x=0.12 due to the possible Fe³⁺—O—Co³⁺ ferromagnetic coupling. When x = 0.25, the M_r increases again because of the dominant Fe³⁺—O—Co³⁺ ferromagnetic coupling. The remanent polarization (2P_r) of BFCT-0.25 was measured to be as high as 62 μC/cm², a 75% increase when compared with the non-doped BFCT-0 films. The 2P_r remains almost unchanged after being subjected to 5.2 × 10⁹ read/write cycles. Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.