Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates La10Si6-x Mgx O27-x（x=0–0.4）

Lanthanum silicates La10Si6-xMgxO27-x(x = 0–0.4) were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore,an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of La10Si6-xMgxO27-x(x = 0–0.4) suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6O27, and La10Si5.8Mg0.2O26.8exhibits the highest conductivity with a value of 3.0×10-2S ·cm-1at 700?C. Such conductive behavior agrees well with the refined results.The corresponding mechanism has been discussed in this paper.     

CaF2纳米晶粒结构相变行为的尺寸依赖性（英文）

利用原位高压同步辐射X射线衍射方法,对尺寸为11 nm的CaF₂纳米晶粒进行高压结构相变和压缩特性研究。当压力为12 GPa时,观察到由萤石结构向α-PbCl₂结构转变的一次相变,该相变压力点远高于体材料,但略低于粒径更小的CaF₂纳米晶体。相比体材料,纳米尺寸的CaF₂样品的体弹模量更大,说明其更难被压缩。当压力释放至常压时,11 nm的CaF₂纳米晶粒的α-PbCl₂型亚稳相结构被保留下来,相变不可逆。分析了影响11 nm CaF₂纳米晶粒独特高压行为的原因,判定尺寸效应为主要因素,该尺寸下较高的表面能导致结构稳定性增强和体积模量增加。     

High pressure electrical transport behavior in SrF_2 nanoplates

The charge transport behavior of strontium fluoride nanocrystals has been investigated by in situ impedance measurement up to 35 GPa.It was found that the parameters changed discontinuously at each phase transition.The charge carriers in SrF_2 nanocrystals include both F~-ions and electrons.In the Fm3 m phase,pressure makes the electronic transport easier,while makes it more difficult in the Pnma phase.The defects at grain boundaries dominate the electronic transport process.Pressure could make the charge-discharge processes in the Fm3 m phase much easier,but make it more difficult in the Pnma phase.     

Transport properties of mixing conduction in CaF_2 nanocrystals under high pressure

We report on the intriguing electrical transport properties of compressed CaF_2 nanocrystals. The diffusion coefficient,grain and grain boundary resistances vary abnormally at about 14.37 GPa and 20.91 GPa, corresponding to the beginning and completion of the Fm3m-Pnma structural transition. Electron conduction and ion conduction coexist in the transport process and the electron conduction is dominant. The electron transference number of the Fm3m and Pnma phases increases with pressure increasing. As the pressure rises, the F~- ion diffusion and electronic transport processes in the Fm3m and Pnma phases become more difficult. Defects at grains play a dominant role in the electronic transport process.     

高比表面积TiO2与g-C3N4复合材料的光催化性能及机理研究

本文通过简单的溶剂热法制备了g-C₃N₄与高比表面积的TiO₂复合材料,该方法操作简单且能耗低. 甲基橙降解实验结果表明,高比表面积的TiO₂有效提高了光催化活性. 光电化学测试结果表明,与g-C₃N₄复合后,TiO₂的电荷载流子迁移速率得到明显改善. g-C₃N₄/高比表面积-TiO₂的光催化活性很强,在100分钟内,6%-g-C₃N₄/高比表面积-TiO₂对甲基橙的降解程度可达92.44%. 6%-g-C₃N₄/高比表面积-TiO₂不仅具有良好的光催化降解性能,还具有较高的稳定性. 本文对6%-g-C₃N₄/高比表面积-TiO₂的光催化机理也进行了系统的研究.     

Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates LaloSi6-xMgxO27-x （x= 0-0.4）

Lanthanum silicates LaloSi6 xMgxO27_x （x = 0-0.4） were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore, an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of LaloSi6_xMgxO27 x （x = 0-0.4） suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6027, and LaloSis.8Mgo.2026.8 exhibits the highest conductivity with a value of 3.0× 10-2 S .cm 1 at 700 ℃. Such conductive behavior agrees well with the refined results. The corresponding mechanism has been discussed in this paper.