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1.
MgZnO薄膜及其量子阱和超晶格的发光特性 总被引:11,自引:4,他引:7
MgO和ZnO形成合金MgxZn1-xO的带隙可以在3.3~7.9eV之间变化,在制备紫外波段光电器件方面有着广阔的应用前景.由ZnO和MgZnO交替沉积而成的ZnO/MgxZn1-xO量子阱和超晶格在激光器、光探测器和其他光电器件方面也有潜在的应用价值.回顾最近几年对MgZnO薄膜材料发光特性的研究进展,介绍在不同衬底上用不同方法制备MgZnO合金薄膜的制备技术、发光特性以及发光特性与薄膜中Mg含量的关系;综述近年来在ZnO/MgxZn1-xO超晶格、量子阱研究上的成果,特别介绍了ZnO/MgxZn1-xO对超晶格、量子阱的发光特性、发光机理以及发光特性与势垒层镁含量、器件温度的关系. 相似文献
2.
用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0.16)薄膜,用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示,MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大,(002)XRD峰半高宽(F
关键词:
xZn1-xO薄膜')" href="#">MgxZn1-xO薄膜
射频磁控溅射
退火 相似文献
3.
MgxZn1-xO thin films have been prepared on silicon substrates by radio
frequency magnetron sputtering at 60℃. The thin films have hexagonal
wurtzite single-phase structure and a preferred orientation with the c-axis
perpendicular to the substrates. The refractive indices of MgxZn1-xO films
are studied at room temperature by spectroscopic ellipsometry over the wavelength
range of 400--760\,nm at the incident angle of 70℃. Both absorption
coefficients and optical band gaps of MgxZn1-xO films are determined by
the transmittance spectra. While Mg content is increasing, the absorption edges of
MgxZn1-xO films shift to higher energies and band gaps linearly increase
from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important
information for the design and modelling of ZnO/ MgxZn1-xO heterostructure
optoelectronic devices. 相似文献
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用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0.16)薄膜,用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示,MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大,(002)XRD峰半高宽(FWHM)减小.结果证明,用射频磁控溅射法通过适当控制退火温度可得到高质量MgxZn1-xO薄膜. 相似文献
6.
用射频磁控溅射法在80℃的衬底温度下制备出MgxZn1-xO(0≤x ≤030)薄膜.x射线 衍射(XRD)结果表明,MgxZn1-xO薄膜为单相六角纤锌矿结构, 没有形成任何显著 的MgO分离相,MgxZn1-xO薄膜的择优取向平行于与衬底垂直的 c轴;c轴晶格常数随着Mg含量的增加逐渐减小.在MgxZn1-xO薄膜的光透射谱中出现 锐利的吸收边,由透 射谱估算出MgxZn1-xO薄膜的带隙宽度由332eV(x=0)线性地 增加到396eV(x=030).
关键词:
xZn1-xO薄膜')" href="#">MgxZn1-xO薄膜
射频磁控溅射
Mg含量 相似文献
7.
用射频磁控溅射法在80℃的衬底温度下制备出MgxZn1-xO(0≤x≤0.30)薄膜.x射线衍射(XRD)结果表明,MgxZn1-xO薄膜为单相六角纤锌矿结构,没有形成任何显著的MgO分离相,MgxZn1-xO薄膜的择优取向平行于与衬底垂直的c轴;c轴晶格常数随着Mg含量的增加逐渐减小.在MgxZn1-xO薄膜的光透射谱中出现锐利的吸收边,由透射谱估算出MgxZn1-xO薄膜的带隙宽度由3.32eV(x=0)线性地增加到3.96eV(x=0.30). 相似文献
8.
用射频磁控溅射法在蓝宝石、硅和石英衬底上沉积出具有好的择优取向的多晶ZnO薄膜. 在270 nm波长的光激发下室温下可观察到显著的紫外光发射(波长为356 nm)和较弱的蓝光发射(波长为446 nm). 经高温退火后薄膜的结晶质量显著提高, 在蓝宝石、石英衬底上沉积的薄膜,其积分发光强度分别增加了7倍和14倍.而硅衬底上的膜发光强度增强不太显著.紫外光发射源于电子的带间跃迁,而蓝光发射是由电子从氧空位浅施主能级到价带顶的跃迁引起的.
关键词:
ZnO薄膜
射频磁控溅射
紫外发光
退火 相似文献
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MgxZn1xO (x ≤ 0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of Mg x Zn 1 x O films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x=0 to 3.90 eV at x=0.30. 相似文献