Pd2Si的生成对Pd/Si多层膜衍射性能的影响

本文研究了Pd₂Si的生成对周期性Pd/Si多层膜X射线衍射性能的影响。X射线衍射强度的测量数据表明Pd₂Si的生成对长周期多层膜的衍射强度影响不大,但对短周期多层膜衍射强度的影响较大。在引入折射率修正后,我们不仅用单个峰的位置计算了多层膜的周期,而且还用了以两个峰的位置联立消去折射率修正的方法计算了多层膜的周期,前者的误差大于后者。模拟计算的结果说明:均匀Pd₂Si层的生成不足以解释Pd/Si多层膜衍射强度随退火温度的变化,界面的平整化或粗糙化是影响衍射强度的另一个要素。 关键词：     

[Pd/Co-Nb/Pd/Si]多层膜的结构与磁性

用高频溅射法制备了两套[Pd/Co-Nb/Pd/Si]多层膜,分别用X射线衍射和振动样品磁强计做了结构和磁性测量。随Pd层厚度增加(或Co-Nb层厚度减少),Pd层由非晶态过渡到晶态,并观察到Pd的fcc(111)双峰结构,双峰的位置逐渐从两侧向体材料Pd的fcc(111)峰的位置靠近。双峰来源于Co-Nb层与Pb层、Pd层与Si层的晶格失配度以及靠近这两种界面的Pd原子的极化不同。样品的饱和磁化强度随Pd层增厚(或Co-Nb层增厚)从小于同样成分的Co-Nb合金体材料的饱和磁化强度值单调增大到大于体材料     

薄膜物理及其应用讲座第五讲Fe－Si／X（Si，Cu，Pd，Cr）多层膜的磁性研究

系统研究了由非晶态Ｆｅ－Ｓｉ合金与Ｓｉ，Ｃｕ，Ｐｄ和Ｃｒ四种不同类型的材料组合而成的磁性多层膜的二维磁性，界面的死层效应和极化效应，层间耦合作用。在Ｆｅ－Ｓｉ／Ｃｒ多层膜研究中，发现了饱和磁化强度随Ｃｒ层厚度的改变而出现振荡变化的现象，这是由于磁性层甲内场的变化，特别是顺磁分量发生振荡变化引起的。     

用不同的Mo靶溅射功率制备Mo/Si多层膜

 用磁控溅射法制备了周期厚度和周期数均相同的Mo/Si多层膜，用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时，Mo/Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。研究发现，随着Mo靶溅射功率的增大，Mo/Si多层膜的表面粗糙度增加，Mo的特征X射线衍射峰也增强，Mo/Si多层膜的软X射线峰值反射率先增大后减小。     

Pt974Mn26/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt974Mn26/Co磁性多层膜系列，通过x射线衍射对该多层膜系列进行结构分析；测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性，分析了饱和磁化强度和有效垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致. 关键词： 多层膜 磁性 磁光     

Co/Ti金属磁性多层膜的激光布里渊散射研究(英文)

在室温下利用直流磁控溅射法制备出了具有不同Co层厚度的 [Co(dConm) /Ti(dTinm) ]n 金属磁性多层膜 (其中dCoanddTi是Co和Ti的厚度 ,n薄膜调制周期数 )。在 30 0K下用X射线衍射法 (XRD)和布里渊散射方法研究了Co层厚度分别为dCo=1 ,2 ,2 5 ,3 5nm ,Ti层厚度为dTi=2 5nm的Co/Ti多层膜。XRD的结果所示在Co/Ti多层膜中Co层厚度超过 2 5nm ,其结构类似块材Co的多晶结构。对比之下 ,Co/Ti多层膜中Co层厚度低于 2 5nm ,其XRD衍射峰随Co层厚度减少变的峰形加宽 ,衍射峰的强度减少 ,峰位移动和消失。在Co/Ti多层膜中自旋波的布里渊散射结果表明 :在Co/Ti多层膜中 ,对于dCo>2 5nm磁性呈铁磁性耦合 ,在dCo≤ 2 5nm时 ,其呈反铁磁性耦合。除表面自旋波外 ,在呈反铁磁性耦合的材料中观测到了两个有体特征的自旋波 ,而在呈铁磁耦合的材料中只观测到一个有体特征的自旋波。     

PdMn/Co多层膜的磁性和磁光特性研究

用磁控溅射法制备了不同Mn含量的PdMn/Co磁性多层膜，通过x射线衍射对该多层膜系列进行结构分析；测定了不同Mn含量系列样品的磁滞回线、垂直各向异性及磁力显微镜图，分析了饱和磁化强度、磁畴和垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，简要分析了一定波长下克尔角随Mn含量增加而变化的物理机制. 关键词： 多层膜 磁性 磁光     

一种软X射线多层膜界面粗糙度的计算方法

提出一个利用多层膜小角X射线衍射谱衍射峰积分强度计算多层膜界面粗糙度的公式。用磁控溅射技术制备Mo／Si多层膜，用波长为0．154nm的硬X射线测量样品在小掠入射角区的衍射曲线，分别用本文公式和反射率曲线拟合方法计算了样品的界面粗糙度。实验结果表明：由本文公式获得的界面粗糙度近似于拟合方法获得的界面粗糙度，它们略等于多层膜界面实际粗糙度。     

分子束外延及溅射法制备Co/Cu多层膜结构与磁电阻的比较研究

对用分子束外延（MBE）和溅射方法制备的Co/Cu多层膜样品分别进行了结构及磁性研究．X射线分析表明两者均有良好的调制周期性，并且前者形成外延单晶结构，铁磁共振研究表明了面内六次各向异性对称的存在，说明此超晶格具有完整的面内二维结构．磁电阻测量发现，溅射制备的多层膜具有较高的磁电阻值并明显地随Cu层厚度而振荡，相应的室温磁电阻峰值分别为27%，24%，14%；而MBE制备的超晶格的磁电阻较小，其第二峰的数值只有7%．MBE超晶格界面处可能具有超顺磁性，对磁电阻和磁化强度的不同的外场依赖关系有一定的影响． 关键词：     

Pt97.4Mn2.6/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt97.4Mn2.6/Co磁性多层膜系列,通过x射线衍射对该多层膜系列进行结构分析;测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性,分析了饱和磁化强度和有效垂直各向异性变化的原因;通过测定该多层膜体系的克尔谱,分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致.     

Effect of grain misorientation on the stripe domains in evaporated cobalt films

X-ray diffraction and magnetic force microscopy techniques were used to investigate the structural and the static magnetic properties of vapor-deposited cobalt films with various thicknesses t ranging from 50 to 195 nm. Texture measurements revealed that as the thickness increases, the films become predominantly c-axis oriented. Magnetic stripe domains structure was only observed for the thicker films, with t=195, 173 and 125 nm, while such a magnetic configuration was expected for all the samples based on the theoretical studies. Since the layers present increasing c-axis misorientation when the thickness decreases, we assume that this effect can prevent the stripe domains formation. This behavior is qualitatively explained by a simple model which describes the stripe domains structure taking into account the role of a small misorientation of the anisotropy axis.     

AlN/BN纳米结构多层膜微结构及力学性能

用射频磁控溅射法制备了AlN,BN单层膜及AlN/BN纳米多层膜.采用X射线衍射仪、高分辨率透射电子显微镜和纳米压痕仪对薄膜结构进行表征.分析表明：单层膜AlN为w-AlN结构,BN为非晶相.AlN/BN多层膜中BN的结构与BN层厚有关.当BN层厚小于0.55nm时,由于AlN层模板的作用,BN发生了外延生长,BN与AlN的结构相同;当BN层厚大于0.74nm时,BN为非晶.AlN/BN多层膜的硬度也与BN层的厚度有关.当BN层厚为1—2个分子层时,AlN/BN多层膜具有超硬效应;当BN层厚增加到0.74 关键词： AlN/BN多层膜 BN结构 超硬效应     

Thickness dependence of magnetic anisotropic properties of FeCoNd films

The magnetic FeCoNd films with thickness (t) from 50 to 166 nm were fabricated by RF magnetron co-sputtering at ambient condition. The amorphous structures of all of the films were investigated by X-ray diffraction and transmission electron microscopy. A spin reorientation transition from in-plane single domain state to out-of-plane stripe domain state was observed as a function of t. When t is below a critical thickness, magnetic moments lie in the film plane corresponding to in-plane single domain state because of the strong demagnetization energy. However, when t is increased, out-of-plane stripe domain structure was developed due to a dominated perpendicular magnetic anisotropy. Scanning electron microscopy data indicate that the perpendicular anisotropy, which is responsible for the formation of stripe domains, may result from the shape effect of the columnar growth of the FeCo grains.     

Magnetic and Mössbauer studies of Fe/Mo multilayered thin films

Fe(x)/Mo(y), multilayered thin films (MLF) with y=7.0 nm and x=0.7, 1.3, 2.6, 3.6, 13.0 nm were fabricated by radio frequency (RF) sputtering. X-ray diffraction evidences that these films have a good periodicity and bcc structure for both Fe and Mo layers. Mössbauer spectra at room temperature (RT) are used to investigate the structure and the local magnetic properties of the interfaces between Fe and Mo layers. It is found that the interfaces present alloying features, i.e. the Fe atoms are randomly substituted by Mo atoms. Magnetic anisotropy which forces magnetic moments to lie in the film plane and reduced magnetic moments in interface region were observed. The specific magnetization of the films exhibits a BT^3/2 dependence with very large values of B which can be attributed to the distribution of exchange interaction in the interfaces.     

Growth of crystalline quartz films with AT-cut plane by means of catalyst-enhanced vapor-phase epitaxy under atmospheric pressure

Crystalline quartz films with an AT-cut plane have been grown by catalyst-enhanced vapor-phase epitaxy, at atmospheric pressure, using two quartz buffer layers on a sapphire (110) substrate. In this method, the first quartz buffer layer was deposited on the sapphire (110) substrate at 773 K. After annealing at 823 K, the second buffer layer was deposited at 723 K. The crystal quartz epitaxial layer was then grown at 843 K. The X-ray full-width-at-half-maximum (FWHM) value of the crystalline quartz film obtained was smaller than that of crystalline quartz prepared using a hydrothermal process. The crystalline quality of the quartz films was dependent on the thickness of the buffer layers. Furthermore, it was found that angle control of the cut plane depended on the film thickness of the second buffer layer. The quartz films grown by vapor phase epitaxy show good oscillation characteristics at room temperature.     

Analysis of periodic Mo/Si multilayers: Influence of the Mo thickness

A set of Mo/Si periodic multilayers is studied by non-destructive analysis methods. The thickness of the Si layers is 5 nm while the thickness of the Mo layers changes from one multilayer to another, from 2 to 4 nm. This enables us to probe the effect of the transition between the amorphous and crystalline state of the Mo layers near the interfaces with Si on the optical performances of the multilayers. This transition results in the variation of the refractive index (density variation) of the Mo layers, as observed by X-ray reflectivity (XRR) at a wavelength of 0.154 nm. Combining X-ray emission spectroscopy (XES) and XRR, the parameters (composition, thickness and roughness) of the interfacial layers formed by the interaction between the Mo and Si layers are determined. However, these parameters do not evolve significantly as a function of the Mo thickness. It is observed by diffuse scattering at 1.33 nm that the lateral correlation length of the roughness strongly decreases when the Mo thickness goes from 2 to 3 nm. This is due to the development of Mo crystallites parallel to the multilayer surface.     

Epitaxial growth of lattice mismatched SrF2 films on (100) GaAs

For the first time insulating epitaxial SrF₂ films on (100) GaAs substrates have been grown by thermal deposition followed by in situ annealing process. Structural properties of SrF₂ films examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy indicate a very good crystalline quality. It is observed from the X-ray analysis that SrF₂ layers thinner than 100 nm suffer two dimensional compressive stress due to the lattice misfit while those thicker than 100 nm suffer two dimensional tensile stress due to the difference in the thermal expansion coefficients.NCL Communication No. 5077     

反应磁控溅射ZrN/AlON纳米多层膜的晶体生长和超硬效应

采用Zr靶和Al₂O₃靶通过在Ar，N₂混合气氛中进行反应磁控溅射的方法制备了不同AlON调制层厚和不同ZrN调制层厚的两个系列的ZrN/AlON纳米多层膜.利用X射线能量色散谱仪、X射线衍射仪、高分辨透射电子显微镜和微力学探针研究了多层膜的成分、微结构和力学性能.结果表明，在Ar，N₂混合气氛中对Al₂O₃进行溅射的过程中，N原子会部分取代Al₂O₃中的氧原子，形成AlON化合物.在ZrN/AlON纳米多层膜中，由于受到ZrN晶体调制层的模板作用，溅射条件下以非晶态存在的AlON层在其厚度小于0.9nm时被强制晶化并与ZrN层形成共格外延生长；相应地，多层膜的硬度明显提高，最高硬度达到33.0GPa.进一步增加多层膜中AlON调制层的厚度，AlON层形成非晶结构，破坏了多层膜的共格外延生长，导致其硬度逐步降低. 关键词： ZrN/AlON纳米多层膜 外延生长 非晶晶化 力学性能     

近红外波段锑基铋掺杂薄膜厚度对光学常数与光学带隙的影响

采用磁控溅射法制备了不同厚度的锑基铋掺杂薄膜,用X射线衍射(XRD)和透射电子显微镜(TEM)研究了薄膜结构随厚度的变化。利用椭圆偏振法测定了样品薄膜在近红外波段的光学常数与光学带隙,研究了膜厚对样品薄膜光学常数和光学带隙的影响。结果表明,膜厚从7 nm增加至100 nm时,其结构由非晶态转变为晶态。在950～2200 nm波段,不同厚度薄膜样品的折射率在4.6～8.9范围,消光系数在0.6～5.8范围,光学带隙在0.32～0.16 eV范围。随着膜厚的增加,薄膜的折射率和光学带隙减小,而消光系数升高;光学常数在膜厚50 nm时存在临界值,其原因是临界值前后薄膜微观结构变化不同。