| Pd2Si的生成对Pd/Si多层膜衍射性能的影响 |
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| 引用本文： | 殷士龙,王兵,高琛,吴自勤,王晓平,赵特秀.Pd2Si的生成对Pd/Si多层膜衍射性能的影响[J].物理学报,1993,42(4):610-616. |
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| 作者姓名： | 殷士龙 王兵 高琛 吴自勤 王晓平 赵特秀 |
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| 作者单位： | (1)河海大学数理系,南京210024; (2)中国科学技术大学基础物理中心,合肥230026; (3)中国科学技术大学物理系,合肥230026 |
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| 基金项目： | 国家自然科学基金;中国科学技术大学结构分析开放研究实验室科研基金 |
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| 摘 要： | 本文研究了Pd2Si的生成对周期性Pd/Si多层膜X射线衍射性能的影响。X射线衍射强度的测量数据表明Pd2Si的生成对长周期多层膜的衍射强度影响不大,但对短周期多层膜衍射强度的影响较大。在引入折射率修正后,我们不仅用单个峰的位置计算了多层膜的周期,而且还用了以两个峰的位置联立消去折射率修正的方法计算了多层膜的周期,前者的误差大于后者。模拟计算的结果说明:均匀Pd2Si层的生成不足以解释Pd/Si多层膜衍射强度随退火温度的变化,界面的平整化或粗糙化是影响衍射强度的另一个要素。
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| 关 键 词： | 多层膜 铅 硅 X射线衍射 退火 |
| 收稿时间： | 1992-04-20 |
EFFECT OF Pd2Si FORMATION ON X-RAY DIFFRACTION OF Pd/Si MULTILAYERS |
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| YIN SHI-LONG,WANG BING,GAO CHEN,WU ZI-QIN,WANG XIAO-PING and ZHAO TE-XIU.EFFECT OF Pd2Si FORMATION ON X-RAY DIFFRACTION OF Pd/Si MULTILAYERS[J].Acta Physica Sinica,1993,42(4):610-616. |
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| Authors: | YIN SHI-LONG WANG BING GAO CHEN WU ZI-QIN WANG XIAO-PING and ZHAO TE-XIU |
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| Abstract: | The effect of Pd2Si formation on the X-ray diffraction of Pd/Si periodic multilayer films after annealing has been studied by X-ray diffraction in small and high angle regimes. The results show that the influence of Pd2Si in small period multilayers is more severe than that in large period multilayers. The periods of multilayers have been calculated with one peak posi-tion or with two peak positions after introducing the refractive correction, and the latter is more accurate than the former. The results of simulation show that an uniform Pd2Si layer formation in a period is not enough to explain the large variation of intensity after annealing. Roughness of the interface is another important factor to influencing the diffraction intensity. |
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