共查询到18条相似文献,搜索用时 140 毫秒
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用电化学方法制备了不发光多孔硅和发光多孔硅,用X射线双晶衍射对两类多孔硅表面进行了微结构分析和晶体质量表征,实验表明两类多孔硅的微结构间存在着很大差别。不发光多孔硅表面对X射线的双晶衍射摇摆曲线可解叠成两个峰,它们分别来自样品多孔层和单晶硅衬底,而发光多孔硅对X射线的双晶衍射摇摆曲线呈高斯对称分布,不可解叠。发光多孔硅比不发光多孔硅表面晶体质量差,且电化学腐蚀越严重,表面晶体质量下降也越严重。 相似文献
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用X射线衍射动力学理论,模拟计算InP衬底上InGaAs/AllnAs超晶格和InGaAs单层膜的X射线双晶摇摆曲线,计算结果表明:薄膜界面粗糙对单层膜的衍射峰和超晶格的零级衍射峰影响较小,但却明显影响单层膜衍射干涉条纹和超晶格的±1级卫星峰,随着平均界面粗糙度的增大,单层膜衍射干涉条纹强度减弱并趋于消失;超晶格的±1级卫星峰变弱并逐渐展宽,理论计算的模拟双晶摇摆曲线与超晶格实验曲线比较表明:高质量匹配In0.53Ga0.47As(85?)/Al0.4
关键词: 相似文献
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一、双晶衍射仪的原理 当一束入射X射线射入第一晶体A后,从A晶体出来的衍射线,又作为第二晶体B的入射线,从B晶体出来的衍射线用计数管或底片接收进行分析.双晶衍射仪中两个晶体通常处于(n,-n)平行衍射位置.仪罩工作时,第二晶体的转角θ稍微转动,用来记录它的摆动曲线(积分曲线),以测量试样表面层的微量应变或点阵常数的微小变化. 二、仪器的理论精度 分析了W.L.Bond[1]设计的多用途双晶X射线测角仪,就可绘出双晶衍射仪的衍射几何. 测量双晶衍射仪精度的方法,是用铜Ka1辐射作硅(111)面的摆动曲线,测量半峰高宽度(简称半峰宽),再和理论计… 相似文献
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用金属有机物化学气相沉积方法在r面蓝宝石上生长了非极性a面GaN薄膜,通过采用AlGaN多量子阱插入层,得到了高质量的非极性GaN材料. 用原子力显微镜和高分辨X射线衍射仪研究了a面GaN的表面形貌和结晶质量,发现非极性材料上典型的三角坑缺陷被消除,(1120)面X射线双晶摇摆曲线的半峰宽为680″.
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GaN
原子力显微镜
高分辨X射线衍射仪
非极性 相似文献
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J. Larsson A. Allen P.H. Bucksbaum R.W. Falcone A. Lindenberg G. Naylor T. Missalla D.A. Reis K. Scheidt A. Sjögren P. Sondhauss M. Wulff J.S. Wark 《Applied Physics A: Materials Science & Processing》2002,75(4):467-478
We have employed time-resolved X-ray diffraction with picosecond temporal resolution to measure the time-dependent rocking
curves of laser-irradiated asymmetrically cut single InSb crystals. Coherent acoustic phonons were excited in the crystals
by irradiation with 800-nm, 100-fs laser pulses at irradiances between 0.25 and 12 mJ/cm2. The induced time-dependent strain profiles (corresponding to the coherent phonons) were monitored by diffracting collimated,
monochromatic pulses of X-rays from the irradiated crystals. Recording of the diffracted radiation with a fast low-jitter
X-ray streak camera resulted in an overall temporal resolution of better than 2 ps. The strain associated with the coherent
phonons modifies the rocking curve of the crystal in a time-dependent manner, and the rocking curve is recorded by keeping
the angle of incidence of the X-rays upon the crystal fixed, but varying the energy of the incident X-rays around a central
energy of 8.453 keV (corresponding to the peak of the rocking curve of the unperturbed crystal). The observed time-dependent
diffraction from the irradiated crystals is in reasonable agreement with simulations over a wide range of energies from the
unperturbed rocking-curve peak.
Received: 22 March 2002 / Revised version: 25 March 2002 / Published online: 6 June 2002 相似文献
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超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。同时利用X射线双晶衍射,变温(10~300K)光致发光(PL)等方法检测分析了外延薄膜的结构和光电特性。在光致发光谱线中我们得到了发射波长850nm的谱峰,谱峰范围跨跃800~880nm,双晶回摆曲线结果显示了设计的结构得到实现。在注入电流140mA时,器件输出光谱的半峰全宽可以达到26nm,室温下连续输出功率达到6mW。 相似文献
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S. Dinakaran Sunil Verma S. Jerome Das G. Bhagavannarayana S. Kar K. S. Bartwal 《Applied physics. B, Lasers and optics》2011,103(2):345-349
Single crystals of the semi-organic non-linear optical material zinc tris (thiourea) sulphate (ZTS) were grown by slow evaporation
solution growth technique. The crystals were characterized for crystalline perfection and optical homogeneity using high-resolution
X-ray diffraction (HRXRD) and optical interferometric techniques. The FWHM of 6 arc sec in HRXRD rocking curve shows the good
crystalline quality. Transmittance of ∼75% shows that the crystal is free from volume defects. Conoscopy was used to assess
the optical quality and investigate the optical indicatrix of the grown crystal. Birefringence values of the crystal along
the three principal crystallographic axes were measured using birefringence interferometry. Mach–Zehnder interferograms exhibit
good refractive-index homogeneity of the grown crystal. 相似文献
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垂直腔面发射激光器的结构生长及特性研究 总被引:1,自引:1,他引:0
在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器(VCSEL)外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配. 相似文献
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用水溶液生长晶体的方法生长出了不同掺杂的Sr(NO3)2晶体.用电子探针研究了杂质在晶体中的分布情况.结果表明,杂质在晶体中存在扇形分凝,其中Ba在{100}扇形区的含量大于{111}扇形区,而Pb的分凝情况相反,在{111}扇形区的含量大于{100}扇形区.用高分辨X射线衍射摇摆曲线技术研究了纯的、掺Ba的和掺Pb的Sr(NO3)2晶体的完整性情况,并用X射线衍射动力学理论计算了完整Sr(NO3
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高分辨X射线衍射
杂质
水溶液晶体生长 相似文献
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Dislocation images in X-ray topography of protein crystals such as tetragonal hen egg-white lysozyme crystals were analyzed. Not only extinction but also double contrast of dislocation images are clearly observed on the X-ray topographs. It should be noted that the observed image widths of the dislocation contrasts are much less than those calculated on the basis of the kinematical theory in X-ray topography, which has been successfully applied for inorganic crystals and organic crystals of small molecules so far. Moreover, in tetragonal HEW lysozyme crystals, the rocking curve widths of the perfect crystal related to the kinematical theory are less than the measured ones by two orders of magnitude. This discrepancy is consistent with that in the image width of the dislocation contrast. From this correlation, it is suggested that the larger rocking curve width, or higher mosaicity, is mainly responsible for the observed image width in the grown crystals. 相似文献
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X射线衍射摇摆曲线的计算机模拟是一种获得材料晶体质量参量的有效方法,其中材料本征摇摆曲线的计算是计算机模拟的基础。用X射线动力学理论计算了Hg1-xCdxTe和Cd1-zZnzTe本征反射率曲线,并研究了组分、膜厚分别对本征反射率和半峰全宽的影响。结果表明Hg1-xCdxTe和Cd1-zZnzTe的本征反射率和半峰全宽与材料组分和厚度有明显的依赖关系,且该依赖关系取决于X射线在材料中的散射和吸收的相对强弱。薄膜的厚度也是直接影响本征摇摆曲线峰形、半峰全宽和反射率的重要因素,当薄膜厚度小于穿透深度时,表征本征反射率曲线的各个参量均与薄膜厚度有直接的关系。对于(333)衍射面,碲镉汞材料厚度大于7μm后,本征反射率和半峰全宽将不再发生明显变化。 相似文献