X射线双晶衍射摇摆曲线本征半峰宽的理论计算

本文应用X射线衍射动力学理论,推导出Bragg衍射几何X射线双晶衍射反射率的数学表达式。多种晶体、不同衍射的摇摆曲线计算结果表明,σ偏振的摇摆曲线的峰值和积分强度均比π偏振的高。而且半峰宽较宽。同时指出,对圆偏振X射线入射或者A,B两晶体不同类或者两者的衍射级数不相同时,很多文献给出的双晶衍射摇摆曲线半峰宽的近似表达式2^1/2∞不再适用。 关键词：     

晶体表面偏角对摇摆曲线及其半峰宽的影响

本文应用X射线衍射动力学理论,计算了晶体表面偏角对X射线双晶衍射摇摆曲线及其半峰宽的影响,得出当晶体表面向某一方向存在一定的偏角时,X射线的入射方向不同,将造成摇摆曲线位置的改变和半峰宽的变化,且其变化趋势随着入射角的变小而增大,随着入射角的减小,反射峰的半峰宽增大,并向高角方向漂移,采用掠入射的不对称衍射方式时,偏角的影响更为明显。 关键词：     

晶体表面畸变的X射线双晶衍射研究

本文介绍了表面畸变的晶体中X射线动力学衍射分层模型的计算原理和通过计算机模拟双晶摇摆曲线获得畸变层信息的方法,讨论了不同的双晶排列方式对摇摆曲线和模拟计算的影响,分析了畸变层内应变、损伤分布与摇摆曲线的关系,并以B⁺注入Si(100)晶片为例,给出了模拟结果。 关键词：     

SrTiO3基片的晶体质量及表面粗糙结构的X射线研究

用X射线双晶衍射摇摆曲线以及双晶X射线形貌对两个SrTiO₃基片的单晶质量进行了对比研究，并用X射线掠入射镜面反射及漫散射研究了它们的表面粗糙结构．结果表明，两个SrTiO₃基片中都存在镶嵌缺陷，其中一个样品的晶体质量相对较高．两个样品的表面粗糙结构相差很大，包括均方根粗糙度σ和横向相关长度ξ．σ分别为（0.5±0.1）和（1.3±0.1）nm，ξ分别为（1200±200）和（300±20）nm．样品的表面粗糙将增加Ｘ射线的漫散射强度而降低镜面反射的强度．晶体质 关键词：     

多孔硅层晶格畸变的X射线双晶衍射研究

利用X射线双晶衍射方法,对从同一Si(111)基片上切割的两块样品,在不同电解电流密度下,腐蚀形成的多孔硅层相对于基体硅的晶格畸变进行了分析。这两块样品晶格的畸变明显不同。其中电流密度较小的样品畸变较大,其多孔硅层对于基体硅在垂直和平行于晶体表面的方向上,晶格有不同程度的膨胀,搁置一段时间后,两者晶格渐渐匹配,但存在着弯曲。两者的(111)晶面取向亦有偏差。电流密度较大时多孔硅层较厚,其双晶反射强度很低,且弥散地迭加在基体硅反射峰上。     

X射线双晶衍射技术

一、双晶衍射仪的原理 当一束入射X射线射入第一晶体A后,从A晶体出来的衍射线,又作为第二晶体B的入射线,从B晶体出来的衍射线用计数管或底片接收进行分析.双晶衍射仪中两个晶体通常处于(n,-n)平行衍射位置.仪罩工作时,第二晶体的转角θ稍微转动,用来记录它的摆动曲线(积分曲线),以测量试样表面层的微量应变或点阵常数的微小变化. 二、仪器的理论精度 分析了W.L.Bond[1]设计的多用途双晶X射线测角仪,就可绘出双晶衍射仪的衍射几何. 测量双晶衍射仪精度的方法,是用铜Ka1辐射作硅(111)面的摆动曲线,测量半峰高宽度(简称半峰宽),再和理论计…     

N极性GaN薄膜的MOCVD外延生长

采用MOCVD技术在c面蓝宝石衬底上外延制备了N极性GaN薄膜。通过KOH腐蚀的方法判定了GaN外延薄膜的极性。通过X射线双晶衍射(XRD)摇摆曲线和光致荧光(PL)谱测试研究了成核层生长时间对N极性GaN薄膜晶体质量和发光性能的影响。研究结果表明,成核层生长时间为300 s时,N极性GaN薄膜样品的位错密度最低,发光性能最好。采用拉曼(Raman)光谱对样品的应变状态进行了分析。     

AlGaAs/GaAs波导薄膜X射线双晶衍射研究

本文应用X射线双晶衍射研究AlGaAs/GaAs波导结构薄膜。结合实验结果,应用X射线衍射动力学理论。计算衬底和多层膜的反射强度,得到样品的真实结构。分析影响薄膜双晶衍射摇摆曲线的若干因素。 关键词：     

半导体应变超晶格结构与界面的X射线双晶衍射研究

本文应用X射线在畸变晶体中的动力学衍射理论,分析了超晶格衍射峰强度分布的规律,计算了应变超晶格中界面变化,层厚波动对双晶摇摆曲线的影响,并初步探讨了超晶格衍射峰之间的小峰消失以及衍射峰宽化的原因,研究表明,衍射峰强度分布依赖于超晶格周期中层厚、成份及应变的综合效果,界面和层厚波动将对摇摆曲线产生一定影响,而晶格弯曲是使衍射峰宽化的主要原因。     

预通三甲基铝对AlN薄膜的结构与应变的影响

采用有机金属化学气相沉积设备用两步生长法在(0001)蓝宝石衬底上制备AlN薄膜。研究了预通三甲基铝(TMAl)使衬底铝化对外延AlN的影响。利用高分辨X射线衍射(XRD)技术和扫描电子显微镜(SEM) 分析了样品的结晶质量以及外延膜中的残余应力。通过SEM观察发现,短时间的预通TMAl处理对AlN薄膜表面的影响不大;但随着预通时间的增加,表面会出现六角形的岛。通过优化TMAl的预通时间可以保护衬底被氮化有利于Al极性面AlN的生长,从而得到的Al极性面AlN表面比较平整;但是预通TMAl时间过长会使衬底表面沉积金属态铝而不容易形成平整的表面。X射线双晶摇摆曲线结果表明:样品的(0002)和(101 2)面的X射线双晶摇摆曲线的半峰宽随着预通TMAl时间的不断增加,由此得出薄膜的晶体质量不断下降。这可以解释为:预通TMAl使形成的晶核不再规则,从而在成核层形成了很多亚颗粒降低了晶体质量。进一步对XRD结果分析,我们也发现了这样的应力变化。这种应力的变化起源可以归结于内应力(岛的合并在其晶界引入的应力)与外应力(晶格失配与热失配引起的应力)共同作用的结果。     

Microstructure and optical properties of ZnO/porous silicon nanocomposite films

In this study, porous silicon (PS) templates were formed by electrochemical anodization on p-type (100) silicon wafer and ZnO films were deposited on PS substrates using radio frequency (RF) reactive magnetron sputtering technique. The effects of oxygen partial pressures of growth ZnO films and annealing ambience on the microstructure and photoluminescence (PL) of the ZnO/PS nanocomposite films were systematically investigated by X-ray diffraction and fluorescence spectrophotometry. The results indicated that all ZnO/PS nanocomposite films were polycrystalline in nature with a hexagonal wurtzite structure and the (002) oriented ZnO films had the best crystal quality under O₂:Ar ratio of 10:10 sccm and annealing in vacuum. PL measurements at room temperature revealed that ZnO/PS nanocomposite systems formed a broad PL band including the blue and green emissions from ZnO and red-orange emission from the PS. The mechanism and interpretation of broadband PL of the nanocomposites were discussed in detail using an oxygen-bonding model in PS and a native defects model in ZnO.     

Surface analysis of thermally annealed porous silicon

Quasi-monocrystalline porous silicon (QMPS) has high potential for photovoltaic application for its enhanced optical absorption compared to bulk silicon in the visible range of solar spectrum. In this study, QMPS was formed from low porosity (∼20-30%) porous silicon (PS) produced by electrochemical anodization, and thermal annealing in the temperature range 1050-1100 °C under pure hydrogen ambient for a duration of 30 min. We analyzed the material surface by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and dynamic secondary ion mass spectroscopy (SIMS) study. The crystallinity was confirmed by GIXRD while FESEM studies revealed that the surface layer is pore free with voids embedded inside the body. AFM studies indicated relatively smooth and uniform surface and the dynamic SIMS study showed the depth profiles of impurities present in the material.     

Electrochemical deposition of cerium on porous silicon to improve photoluminescence properties

In this work, we present results for Cerium (Ce) doping effects on photoluminescence (PL) properties of porous silicon (PS). Cerium was deposited using electrochemical deposition on porous silicon prepared by electrochemical anodization of P-type (100) Si. From the photoluminescence spectroscopy, it was shown that porous silicon treated with cerium can lead to an increase of photoluminescence when they are irradiated by light compared to the porous silicon layer without cerium. In order to understand the contribution of cerium to the enhanced photoluminescence, energy dispersive X-ray (EDX) spectroscopy, Fourier transmission infrared spectroscopy (FTIR), X-ray diffraction (XRD) and atomic force microscopy (AFM) were performed, and it was shown that the improved photoluminescence may be attributed to the change of Si–H bonds into Si–O–Ce bonds and to a newly formed PS layer during electrochemical Ce coating.     

无紫外光照射下n型15R-SiC及6H-SiC晶体的电化学腐蚀

本文在无紫外光照射下通过电化学腐蚀法制备了多孔n型15R-及6H-SiC,并用扫描电子显微镜(SEM),拉曼散射及X射线衍射仪(XRD)对多孔层的结构进行了分析。结果表明:晶体的晶型及氧化条件等因素对多孔结构有较大影响。首次观察到多孔n型15-SiC的半圆管状结构,其孔隙率约是66%。     

Buffer layer influence on guiding properties of oxidized porous silicon waveguides

We studied the influence of the thickness and porosity of the buffer layer on the guiding properties of oxidized porous silicon waveguides (OPSWG). It is demonstrated how a modified anodization process acts on the porosity of the final oxidized porous silicon. In this way, it is possible to control the refractive index jump between the core of OPSWG made of compact silicon dioxide and the bottom buffer layer made of porous silicon dioxide. The adoption of a double-step anodization process decreases the propagation losses to 0.5 dB/cm against the 8 dB/cm measured for the waveguide realized using a single-step anodization. The main reason seems not to be the increase of the difference of refractive index values but the more homogeneous buffer layer obtained along the core of the waveguide. This homogeneous layer permits a better lateral confinement of the light as demonstrated by spatial refractive index profile measurement.     

Analysis of characteristics of porous silicon layers obtained on the <Emphasis Type="Italic">p</Emphasis>-type single-crystal silicon

Porous silicon layers on the p-type silicon substrate with different porosity and thickness have been obtained by electrochemical anodization method. Dependences of porosity and thickness of the layers on the content of HF in solution, anodization current density and anodization time were analyzed. The obtained experimental results are approximated by analytical expressions for revealing the regimes at which porous silicon layers with desired parameters can be produced.     

Temperature-dependent photoluminescence and Raman spectra from porous GeSi/Si heterostructures

Porous GeSi/Si heterostructures were fabricated by laterally anodization in HF-based solutions. Photoluminescence spectra have been investigated as a function of temperature (77–300 K), showing that porous GeSi has a quite different temperature dependence from that of porous silicon. Raman spectra indicated that the sample structure changed after anodization. Phonon participation and direct recombination of excitons are proposed to be responsible in the light emission processes of porous GeSi and Si, respectively.     

Studies on the growth,structural, optical and laser damage threshold properties of 4-aminopyridinium p-aminobenzenesulfonate p-ammoniobenzenesulfonate monohydrate crystal

An organic nonlinear optical crystal 4-aminopyridinium 4-aminobenzenesulfonate 4-ammoniobenzenesulfonate monohydrate (4APABS) was grown by slow evaporation solution growth technique. The cell parameters of grown crystal were confirmed by single crystal X-ray diffraction analysis. High resolution X-ray diffraction studies revealed the crystalline perfection of grown crystal. The functional groups present in title compound were confirmed by FTIR spectral studies. UV–vis spectral studies revealed that the grown crystal is transparent in the entire visible region. Single and multiple shots laser induced surface damage threshold values of the grown crystal were measured using Nd:YAG laser. The relative second harmonic generation efficiency of grown crystal was found to be 2.2 times that of KDP crystal.     

Blue–green and red luminescence from ZnO/porous silicon and ZnO:Cu/porous silicon nanocomposite films

Both ZnO and Cu doped ZnO films with strong c-axis preferred orientation have been successfully prepared on porous silicon substrate, formed by electrochemical anodization, using radio frequency reactive magnetron sputtering method. X-ray diffraction measurements showed that the intensity of (0 0 2) diffraction peak first decreased and then increased with the Cu doping content increasing. Meanwhile new weak (1 0 0), (1 0 1), (1 0 2) and (1 1 0) diffraction peaks appeared after doping. The optical band edge of ZnO:Cu films, deduced from the optical absorption spectra, shifted to a longer wavelength comparing with the undoped sample and we attributed this red shift phenomenon to the decreasing of carrier concentration. The broad light emission from 350 to 800 nm was obtained by combining the blue–green emission from ZnO with red–orange emission from porous silicon. This could be used as a source of white light emitting diode chips underlying the importance of our work. The variation and origin of the emission peaks were discussed through the Gaussian deconvolution, and the Raman scattering spectral revealed the characteristics of porous silicon and multiphonon processes.