共查询到16条相似文献,搜索用时 343 毫秒
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《中国光学与应用光学文摘》2005,(5)
O722 2005053902 Hg1-xCdxTe/Cd1-zZnzTe的X射线反射率及半峰全宽的动 力学研究=X-ray reflectivities and FWHM of Hg1-x CdxTe/Cd1-zZnz Te materials[刊,中]/王庆学(中科院上海 技物所半导体材料与器件研究中心.上海(200083)),杨建 荣…∥光学学报.-2005,25(5).-712-716 用X射线动力学理论计算了Hg1-xCdxTe/Cd1-zZnzTe 本征反射率曲线,研究了组分、膜厚分别对本征反射率和 半峰全宽的影响。结果表明Hg1-xCdxTe和Cd1-zZnzTe的 本征反射率和半峰全宽与材料组分和厚度有明显的依赖 关系,且该依赖关系取决于X射线在材料中的散射和吸收 的相对强弱。薄膜的厚度也是直接影响本征摇摆曲线峰 形、半峰全宽和反射率的重要因素,当薄膜厚度小于穿透 深度时,表征本征反射率曲线的各个参量均与薄膜厚度有 直接的关系。对于(333)衍射面,碲镉汞材料厚度大于7 μm后,本征反射率和半峰全宽将不再发生明显变化。图6 参13(杨妹清) 相似文献
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本征反射率是X射线衍射摇摆曲线计算机模拟的基础。用X射线动力学理论研究了组分不均匀对HgCdTe材料X射线反射率的影响。研究结果表明,横向组分不均匀性直接影响摇摆曲线的峰形,峰值反射率和半峰全宽随组分不均匀的增大而分别减小和增大,且与组分不均匀性的均方差近似成指数关系,但其积分反射率却基本保持不变;采用多层模型对具有线性组分梯度的HgCdTe半导体材料反射率的计算结果则表明,纵向组分梯度除导致反射率峰值强度下降外,还会引起摇摆曲线产生单边干涉效应,摇摆曲线的半峰全宽和干涉峰间距随组分梯度的增加而增大,而干涉峰间距与干涉周期之间的关系则随组分梯度的增加其偏离线性的程度增大。 相似文献
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采用低压金属有机化学气相沉积(LP-MOCVD)技术,在普通石英衬底上制备出不同Cd组分(0.02,0.44,0.59,0.83,0.91)的Zn1-xCdxS合金薄膜材料。X射线测量表明样品为单一取向的纤锌矿结构,并且随着x的增加衍射峰位基本成线性地从ZnS衍射峰向CdS衍射峰移动。此外,在PL谱中还可以看出随着样品中Cd含量的增加,发光峰从3.66eV红移到2.43eV。根据发光峰位与Zn1-xCdxS中x的变化关系,推导出它们之间的关系近似为Eg(Zn1-xCdxS)=3.61-1.56x 0.38x^2。还探讨了不同Cd组分薄膜材料的X射线衍射峰半峰全宽以及发光峰半峰全宽的变化。 相似文献
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研究了InP基InGaAsSb外延材料受生长温度和Ⅴ/Ⅲ比的影响。实验中利用高能电子衍射(RHHEED)监测获得了合适的生长温度和Ⅴ/Ⅲ比,采用扫描电子显微镜 (SEM)、X射线光电子能谱(XPS)、X射线双晶衍射(XRDCD)和光致发光(PL)谱等方法研究了InGaAsSb薄膜材料的表面形貌、结晶质量和发光特性。通过控制生长温度和Ⅴ/Ⅲ比,获得了X射线衍射峰半峰全宽较窄的高质量的外延材料。 相似文献
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通过射频磁控溅射技术在GaAs,Au/GaAs,Si和玻璃基片上成功制备了ZnO多晶薄膜,利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征,结果表明ZnO薄膜呈完全c轴取向,Au缓冲层可以有效地改善ZnO薄膜的晶体质量,X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°,同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响,通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测,利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量.
关键词:
ZnO薄膜
X射线衍射
声表面波 相似文献
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采用射频磁控溅射制备了非晶态结构的Hg1-xCdxTe薄膜,并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明,溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大,其生长速率逐渐降低。当溅射气压高于1.1 Pa时,薄膜XRD图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,具有明显的非晶态特征;当溅射气压小于1.1 Pa时,XRD谱表现为多晶结构。另外,随着溅射气压的增加,薄膜表面粗糙度逐渐减小,而且溅射气压对薄膜组成的化学计量比有明显影响,当溅射气压为1.1 Pa时,薄膜中Hg的组分比最低,而Cd组分比最高。 相似文献
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We studied the affection of thin (i.e., 0.2–0.8 nm) Ni films on hydrogen-terminated Si(1 1 1) substrate surface by using strain-sensitive X-ray diffraction. It was reported that Ni deposition onto hydrogen-terminated Si surface apparently does not cause film growth, but rather diffuses into the Si crystal, creating an “Ni diffusion layer” up to Ni deposition 0.8 nm thick. Measured rocking curves of the Si 1 1 3 reflection and integrated intensities of the rocking curves for the substrate provide information about the evolution of the strain field introduced near the substrate surface during Ni diffusion into the substrate. Comparing the measured and calculated rocking curves indicates that compression of the {1 1 1} spacing of the Si occurs gradually up to an Ni thickness of 0.6 nm, and that above this thickness, strain relaxation occurs.
We found that the slope of the integrated intensity of the rocking curve versus X-ray wavelength correlates to the strain field near the surface, in the same way that the shape of the rocking curves correlate to the strain field near the surface. Dynamical diffraction calculations indicate that measurement of the slope of the integrated intensity of the rocking curve versus X-ray wavelength is useful for strain analysis, because the dependence is not only sensitive to strain fields, but is also insensitive to the effect of absorption by the overlayer, which otherwise would cause deformation of the shape of the rocking curve. 相似文献
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Qiumin Yang Jie Zhao Min Guan Chao Liu Lijie Cui Dejun HanYiping Zeng 《Applied Surface Science》2011,257(21):9038-9043
CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 °C shows a polycrystalline structure with rough surface. As the temperature increases over 300 °C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 °C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 °C were annealed in air for 30 min to study the films’ thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 °C, meaning a good thermal stability of the cubic CdSe epilayers. 相似文献