Modulation of absorption manner in helicon discharges by changing profile of low axial magnetic field

The modulation of absorption manner in helicon discharge by changing the profile of low axial magnetic field is explored experimentally in this work. The experiments are carried out in Boswell-type antenna driven by 13.56-MHz power source in 0.35-Pa argon environment. The peak of the external non-uniform magnetic field(B_(ex)) along the axis is observed in a range from 0 Gs to 250 Gs(1 Gs = 10~(-4) T), where the electron density varies from 0.5×10~(16) m~(-3) to 9×10~(16) m~(-3).When Bex is located near the tube upper end sealed by a dielectric plate, or near the tube bottom end connected with a diffusion chamber, the plasmas are centralized in the tube in the former case while the strong luminance appears between the edge of the tube and the axial line in the latter case. When Bex is located in the middle of the antenna, moreover, an effective resistance(R_(eff)) peak appears apparently with increasing magnetic field. The glow moves toward first the edge of the tube and then the two antenna legs as the magnetic field increases. The discharge in this case is caused by the absorption of Trivelpiece–Gould(TG) wave. It is suggested that B_(ex) is located in the middle of the antenna to obtain a higher efficiency of power transfer.     

电爆炸法制备纳米颗粒收集方法

金属丝电爆炸法制备纳米材料因其负载可大程度的过热和爆炸产物非平衡扩散过程得到了研究人员的广泛关注,认为是制备新型功能材料的有效方法。研究了不同收集方法对电爆炸法制备钛纳米颗粒的影响,并结合电学、光学、自辐射图像和形貌分析等诊断手段分析了不同方法下产物特性的成因。结果表明,钛丝电爆炸呈现周期型放电模式,产物通道在放电结束前（约40 μs）可膨胀至约1.7 cm处,此后有尖状突刺发展（波阵面后湍流区）,其速度约为55 m/s。为研究爆炸产物不同状态下纳米颗粒形成特性,使用了3种不同的产物收集方法,分别为:①在金属丝径向1.5 cm处放置硅片收集;②在腔体出口处预置滤网收集;③在金属丝一侧电极上通过定向喷涂收集。产物形貌表征结果表明,使用不同收集方法时产物特征存在明显差别,前2种方法爆炸产物先与介质混合再沉积于硅片,得到的产物分别为分散、链状的球状纳米颗粒和密集、堆叠的纳米颗粒团簇;后一种方法电爆炸产物具有较高的密度和定向速度（对硅片）,硅片以金属丝为轴心远近呈现出粉末状和烧结块状两种不同形式。     

Striations in Plasma Display Panel

The phenomenon of striation has been investigated experimentally in a macroscopic ac-plasma display panel （PDP）. The relationship between the characteristics of striation and the operation conditions including voltage, frequency, rib, and electrode configuration, etc is obtained experimentally. The origin of the striations is considered to be the ionization waves in the transient positive column near the dielectric surface in the anode area during the discharge, and the perturbation is caused by resonance kinetic effects in inert gas.     

Effect of Laser Cooling on Frequency Standard of Single Ca^＋ Ion Trapped in a Radio-Frequency Paul Trap

The source of systematic frequency shift of single-ion optical frequency standard of^40 Ca^＋ ion trapped in endcap trap and laser-cooled to a few of mK is analysed and calculated. Second-order Doppler shift, Stark shift due to micromotion and thermal motion, blackbody Stark shift and ac Stark shift are calculated for the ground state and excited 3d ^2D5/2 state. The Hertz-level measurement of the optical clock frequency in a single ^40Ca^＋ ion can be performed.     

一個作圖題的另外解法

本通報1953年1-2月號發表的“東北敬部編譯「平面幾何」中的三個作圖題”一文中第一題“求作一圓,切於已知角的一邊上的已知點,而於另一邊上截取一弦等於已知綫段”,現有文成宜和王麗庭兩位同志提出另外的解法,但兩位同志的解法賞大致相類,為省篇幅,我們經過改寫合併發表於下。 設P是已知角XOY的OX邊上的一個已知點,l為已知綫段,假定所求圓已經作出,它切OX於P點,截OY得AB弦,有AB=l(這裹AB與OY同向)。今將P點依OY的方向平移至Q點,使PQ=l,於是PQBA為平行四邊形;再以直綫OY為軸將Q點反射得Q′點,則有     

金属颗粒-半导体膜Cu:CdS的制备及结构研究

利用磁控溅射产生金属Cu团簇，同时蒸发半导体介质CdS，将Cu团簇包埋在CdS介质中，制备出金属颗粒 半导体膜．团簇大小可通过改变溅射气压控制．用TEM研究了嵌埋团簇的结构．分析表明：CdS很好地包埋了Cu团簇，都呈多晶结构；团簇尺寸在5—20nm，Cu晶格发生了膨胀，膨胀量在7%左右 关键词：     

MeV微集团束与物质的相互作用

简述了有关MeV微集团离子束与物质表面相互作用研究的概况．介绍了在北京大学技术物理系和重离子物理所１．７ＭＶ串列加速器上开展的有关实验研究及取得的初步结果． The recent development on investigation of MeV microcluster beam interaction with matter is outlined. And based on 5SDH 2 Pelletron of Peking University, some relative experimental results, such as identification and Rutherford backscattering measurement of MeV carbon cluster ions, stopping power of MeV silicon microcluster ions in Al film, damage producted in silicon by MeV silicon microcluster irradiation, etc. are briefly introduecd.     

机械制造系统生产水平的综合评价

运用数理统计和模糊数学的某些概念，本文提出了一种评价机械制造系统生产水平的新方法，机械制造系统可以用模糊变换器来描述，这个模糊变换器比较客观和全面地揭示机械制造系统的内在规律。借助这个模糊变换器来综合评价机械制造系统具有很大的理论和实践价值，并为机械制造系统论奠定新的基础。无心磨削系统的实验研究证明了本文基本观点的正确性。     

50MeV/A~(12)C轰击~(197)和~(209)Bi核的线动量转移

用裂变碎片折叠角技术测得50MeV/A~(12)C轰击~(197)Au和~(209)Bi靶的线性动量转移分布,得到每个~(12)C核核子线动量转移的最可几值与靶核相关,其值分别为184和173MeV/c。在线动量转移分布中,0.3附近有一小的突起,似乎可以认为是相应于弹核的α集团转移。     

薄膜界面粗糙对双晶摇摆曲线的影响

用X射线衍射动力学理论,模拟计算InP衬底上InGaAs/AllnAs超晶格和InGaAs单层膜的X射线双晶摇摆曲线,计算结果表明:薄膜界面粗糙对单层膜的衍射峰和超晶格的零级衍射峰影响较小,但却明显影响单层膜衍射干涉条纹和超晶格的±1级卫星峰,随着平均界面粗糙度的增大,单层膜衍射干涉条纹强度减弱并趋于消失;超晶格的±1级卫星峰变弱并逐渐展宽,理论计算的模拟双晶摇摆曲线与超晶格实验曲线比较表明:高质量匹配In_0.53Ga_0.47As(85?)/Al_{0.4 关键词：}