Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor(HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.     

Effects of Different Plasma Energy Treatments on n-Type Al0.4Ga0.6N Material

El3ctronic properties, surface chemistry and surface morphology of plasma-treated n-Al0.4Ga0.6N material are studied by electrical contact measurements, atomic force microscopy and x-ray photoemission spectroscopy. Although excessive etching can cause the surface roughness to significantly increase, the nitrogen vacancies VN produced by the excessive etching can be compensated for by the negative effects of the rougher surface. Thus, VN produced by excessive etching plays a key role in Ohmic contact of high-A1 content AIGaN and it can reduce Ohmic contact resistance. The effect of rapid thermal annealing on the performance of n-Al0.4Ga0.6N can significantly reduce the etching damage caused by excessive etching.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated by using the finite element method (FEM). The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.     

Structural and optical investigation of nonpolar α-plane GaN grown by metalben organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Nonpolar (1120) α-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire. The samples are irradiated with neutrons under a dose of 1 × 10¹⁵ cm^-2. The surface morphology, the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The AFM result shows deteriorated sample surface after the irradiation. Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction. Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample, indicating that more point defects appear in the irradiated sample. The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results. The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.     

The etching of a-plane GaN epilayers grown by metal--organic chemical vapour deposition

Morphology of nonpolar (1120) a-plane GaN epilayers on r-plane (1102) sapphire substrate grown by low-pressure metal-organic vapour deposition was investigated after KOH solution etching. Many micron-and nano-meter columns on the a-plane GaN surface were observed by scanning electron microscopy. An etching mechanism model is proposed to interpret the origin of the peculiar etching morphology. The basal stacking fault in the a-plane GaN plays a very important role in the etching process.     

金属有机物化学气相沉积生长的a(11-20)面GaN三角坑缺陷的消除研究

用金属有机物化学气相沉积方法在r面蓝宝石上生长了非极性a面GaN薄膜,通过采用AlGaN多量子阱插入层,得到了高质量的非极性GaN材料.用原子力显微镜和高分辨X射线衍射仪研究了a面GaN的表面形貌和结晶质量,发现非极性材料上典型的三角坑缺陷被消除,(11-20)面X射线双晶摇摆曲线的半峰宽为680″.     

基于CLIPS的激光驱动器故障诊断专家系统设计

针对大型激光驱动器故障定位难,诊断、处置效率低的基本现状,提出利用专家系统进行故障诊断的基本思路,并以自动准直子系统为例,介绍了专家系统的体系架构、故障树模型、知识库设计和基于CLIPS工具的实现方法。初步应用结果表明,该专家系统有助于提高装置的故障诊断效率和智能化水平,增强系统可用性。     

基于换能器驱动信号特征的高强度聚焦超声焦域损伤实时监测

高强度聚焦超声(high intensity focused ultrasound,HIFU)焦域的实时监测是聚焦超声临床治疗面临的关键问题,目前临床常采用B超图像强回声的变化实现焦域组织损伤的监测,而B超图像出现的强回声大多与焦域处的空化及沸腾气泡相关,无法准确、实时地监测治疗状态.HIFU治疗中焦域组织会伴随温度升高、空化、沸腾和组织特性等变化,换能器表面的声学负载也在不断变化,针对该问题,本文构建了换能器电压电流实时检测平台,通过测量换能器电学参数来感知焦域组织的状态变化.以离体牛肝组织作为HIFU辐照对象,并将相位差变化的结果与离体牛肝组织损伤的结果进行了对照,实验结果表明,在HIFU辐照过程中,换能器电压与电流的相位会出现由相对平稳到大幅波动的过程,此时停止辐照可见焦域出现明显损伤,而此时B超图像灰度无明显变化;此外,当焦域出现空化时,其波动幅度与范围将较之更大.此方法可为HIFU焦域组织损伤监测提供一种新的研究方案和手段.     

基于多变体的控制软件异构冗余与动态重构技术研究

针对控制软件的防篡改需求,提出利用多变体技术和虚拟化技术实现软件运行态异构冗余、动态重构及多余度表决的动态目标防御方法,介绍了技术路线、系统架构、动态重构策略、表决算法和同步机制。研究结果表明,该技术在提高控制系统可靠性的同时,实现了信息安全主动防御,能够部分解决目前工控系统面临的安全问题。