分布布喇格反射镜的反射特性

采用等效法布里珀罗(FP)腔方法对分布布喇格反射镜(DBR)的特性进行了研究,计算并讨论了上下两层DBR结构非对称模型反射率的变化.设计了DBR反射镜的反射谱中心波长为850nm的结构.随着DBR周期数的增加,腔反射率峰值逐渐增加.上下两层DBR反射镜的厚度由反射率和中心波长决定.实验表明,下DBR的周期数为30对左右,上DBR的周期数为20对左右,易实现激光输出.非对称的双层DBR的反射特性表明理论计算与实验结果基本一致.     

Oxide-apertured VCSEL with short period superlattice

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1 As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2° off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100℃ and the threshold current increased slowly with the increase of temperature.     

Oxide-apertured VCSEL with short period superlattice

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS)used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2° off toward (111)A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 ℃ and the threshold current increased slowly with the increase of temperature.     

垂直腔面发射激光器的结构生长及特性研究

在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器（VCSEL）外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.