In-Situ Conductivity Measurement of BaF2 under High Pressure and High Temperature

We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 GPa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30 GPa, and the conductivity increases gradually with increasing pressure from 30 GPa. However, the metallization predicted by theoretical calculation at 30-33 GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87 GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10^-3Ω^-1 cm^-1 at 37 GPa and 2400 K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction.     

Phase Transition Behavior of LiCr 0.35 Mn0.65O2 under High Pressure by Electrical Conductivity Measurement

The electrical conductivity of powdered LiCr 0.35 Mn0.65O2 is measured under high pressure up to 26.22 GPa in the temperature range 300-413 K by using a diamond anvil cell. It is found that both conductivity and activation enthalpy change discontinuously at 5.36 GPa and 21.66 GPa. In the pressure range 1.10-5.36 GPa, pressure increases the activation enthalpy and reduces the carrier scattering, which finally leads to the conductivity increase. In the pressure ranges 6.32-21.66 GPa and 22.60-26.22 GPa, the activation enthalpy decreases with pressure increasing, which has a positive contribution to electrical conductivity increase. Two pressure-induced structural phase transitions are found by in-situ x-ray diffraction under high pressure, which results in the discontinuous changes of conductivity and activation enthalpy.     

Superconductivity in Topological Semimetal θ-TaN at High Pressure

Recently,θ-TaN was proposed to be a topological semimetal with a new type of triply degenerate nodal points.Here,we report studies of pressure dependence of transport,Raman spectroscopy and synchrotron x-ray diffraction on θ-TaN up to 61 GPa.We find that θ-TaN becomes superconductive above 24.6 GPa with T_c at 3.1 K.The θ-TaN is of n-type carrier nature with carrier density about 1.1 × 10~(20)/cm~3 at 1.2 GPa and 20 K, while the carrier density increases with the pressure and saturates at about 40 GPa in the measured range.However,there is no crystal structure transition with pressure up to 39 GPa,suggesting the topological nature of the pressure induced superconductivity.     

Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

We study the effect of pressure on electronic and thermoelectric properties of Mg_2Si using the density functional theory and Boltzmann transport equations. The variation of lattice constant, band gap, bulk modulus with pressure is also analyzed. Further, the thermoelectric properties(Seebeck coefficient, electrical conductivity, electronic thermal conductivity) have been studied as a function of temperature and pressure up to 1200 K. The results show that Mg_2Si is an n-type semiconductor with a band gap of 0.21 eV. The negative value of the Seebeck coefficient at all pressures indicates that the conduction is due to electrons. With the increase in pressure, the Seebeck coefficient decreases and electrical conductivity increases. It is also seen that, there is practically no effect of pressure on the electronic contribution of thermal conductivity.The paper describes the calculation of the lattice thermal conductivity and figure of merit of Mg_2Si at zero pressure. The maximum value of figure of merit is attained 1.83 × 10~(-3) at 1000 K. The obtained results are in good agreement with the available experimental and theoretical results.     

Phase Transition of FeS in Terms of In-Situ Resistance Measurement

Electrical properties of stoichiometric iron sulfide （FeS） are investigated under high pressure with a designed diamond anvil cell. The process of phase transition is reflected by changing the electrical conductivity under high pressure, and the conductivity of FeS with the NiAs structure is found to be much smaller than other phases. Two new phase transitions without structural change are observed at 34.7 GPa and 61.3 GPa. The temperature dependence of the conductivity is found to be similar to that of a semiconductor when the pressure is higher than 35 GPa     

Raman scattering from highly-stressed anvil diamond

The high-frequency edge of the first-order Raman mode of diamond reflects the stress state at the culet of anvil, and is often used for the pressure calibration in diamond anvil cell(DAC) experiments. Here we point out that the high-frequency edge of the diamond Raman phonon corresponds to the Brillouin zone(BZ) center Γ point as a function of pressure. The diamond Raman pressure gauge relies on the stability of crystal lattice of diamond under high stress. Upon the diamond anvil occurs failure under the uniaxial stress(197 GPa), the loss of intensity of the first-order Raman phonon and a stressdependent broad Raman band centered at 600 cm^-1 are observed, which is associated with a strain-induced local mode corresponding to the BZ edge phonon of the L1 transverse acoustic phonon branch.     

Influence of annealing treatment on as-grown Ib-type diamond crystal at a high temperature and high pressure

In this paper,we report on the influence of annealing treatment on as-grown Ib-type diamond crystal under high pressure and high temperature in a china-type cubic anvil high-pressure apparatus.Experiments are carried out at a pressure of 7.0 GPa and temperatures ranging from 1700 C to 1900 C for 1 h.Annealing treatment of the diamond crystal shows that the aggregation rate constant of nitrogen atoms in the as-grown Ib-type diamond crystal strongly depends on diamond morphology and annealing temperature.The aggregation rate constant of nitrogen remarkably increases with the increase of annealing temperature and its value in octahedral diamond is much higher than that in cubic diamond annealed at the same temperature.The colour of octahedral diamond crystal is obviously reduced from yellow to nearly colorless after annealing treatment for 1 h at 1900 C,which is induced by nitrogen aggregation in a diamond lattice.The extent of nitrogen aggregation in an annealed diamond could approach approximately 98% indicated from the infrared absorption spectra.The micro-Raman spectrum reveals that the annealing treatment can improve the crystalline quality of Ib-type diamond characterized by a half width at full maximum at first order Raman peak,and therefore the annealed diamond crystals exhibit nearly the same properties as the natural IaA-type diamond stones of high quality in the Raman measurements.     

Structural stability and electrical properties of AlB2-type MnB2 under high pressure

The structural stability and electrical properties of AlB2-type MnB2 were studied based on high pressure angledispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell(DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB2-type MnB2 remains stable up to 42.6 GPa. From the equation of state of MnB2, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB2-type MnB2 is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure.     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Structural stability and electrical properties of AIB2-type MnB2 under high pressureStructural stability and electrical properties of AIB2-type MnB2 under high pressureStructural stability and electrical properties of AIB2-type MnB2 under high pressureStructural stability and electrical properties of AIB2-type MnB2 under high pressure

The structural stability and electrical properties of A1B2-type MnB2 were studied based on high pressure angle- dispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell （DAC） and first-principles calcu- lations under high pressure. The x-ray diffraction results show that the structure of A1B2-type MnB2 remains stable up to 42.6 GPa. From the equation of state of MnB2, we obtained a bulk modulus value of 169.9~3.7 GPa with a fixed pressure derivative of 4, which indicates that A1B2-type MnB2 is a hard and incompressible material. The electrical resistance un- dergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure.     

PbMoO4原位高压拉曼光谱和电导率的研究

 钼酸铅（PbMoO₄）具有高的声光品质因数、低的声损耗、良好的声阻抗匹配等性质，被广泛应用于声光偏转器、调制器、可调滤光器、声表面波器件等各类声光器件，其优异的低温闪烁性能亦引起人们的注意，具有在核设备方面的应用潜力。为探讨其晶体结构和物理性质，在金刚石对顶砧上原位测量了PbMoO₄的拉曼光谱，并测量了其在几个不同压力点下电导率随温度的变化。实验发现，压力在12.5 GPa时，拉曼峰完全消失，说明压力在10.8～12.5 GPa之间PbMoO₄样品出现了非晶态转变。当从26.5 GPa卸压到9.4 GPa时，PbMoO₄的拉曼谱在低波数出现无序化，而在2.4 GPa压力下858 cm^-1峰又重新出现，说明样品结构由无序向晶化回复。压力在10.8 GPa以上时，电导率随着温度的增加而显著增加，且随着压力的增加也明显增加。     

Raman Investigation of Sodium Titanate Nanotubes under Hydrostatic Pressures up to 26.9GPa

High pressure behavior of sodium titanate nanotubes （Na2Ti2O5） is investigated by Raman spectroscopy in a diamond anvil cell （DAC） at room temperature. The two pressure-induced irreversible phase transitions are observed under the given pressure. One occurs at about 4.2 GPa accompanied with a new Raman peak emerging at 834 cm-1 which results from the lattice distortion of the Ti-O network in titanate nanotubes. It can be can be assigned to Ti-O lattice vibrations within lepidocrocite-type （H0.7Ti1.825V0.175O4＆#12539;H2O）TiO6 octahedral host layers with V being vacancy. The structure of the nanotubes transforms to orthorhombic lepidocrocite structure. Another amorphous phase transition occurs at 16.7 GPa. This phase transition is induced by the collapse of titanate nanotubes. All the Raman bands shift toward higher wavenumbers with a pressure dependence ranging from 1.58-5.6 cm-1/GPa.     

氧化镍（绿镍矿）等温压缩及高压相变研究

 本文采用DAC（金刚石压砧高压腔）装置，对氧化镍进行了静水压、非静水压、电导率测量等系统高压实验，获取了氧化镍等温压缩、高压相变及电导率压力效应的新结果，并在实验数据的基础上，对其高压相变与电性及磁性变化关系及体弹性模量作了分析讨论。     

冲击压缩下金属的电导率测量

 探索了一种在兆巴压力冲击压缩下测量金属电导率的新方法——四电极垂向引线法，并用刻槽单晶蓝宝石作绝缘腔体，以消除分流效应对测量结果的影响。用二级轻气炮作为加载手段，测量了铁在终态平衡压力为101～208 GPa压力区间内的电导率（电导率从1.45×10⁶ S/m变化到7.65×10⁵ S/m）。将测量铁电导率的压力范围扩展到了200 GPa以上。实验结果表明，关于金属电导率的Bloch-Grüneisen公式在高达200 GPa冲击压力下仍然有效（对于ε-铁）。     

Raman Investigation of BaWO4-II Phase under Hydrostatic Pressures up to 14.8GPa

The BaW04-17 phase is synthesized at 5.0 GPa and 610~C with a cubic-anvil apparatus and identified by XRD. Raman scattering measurement is carried out to investigate the phase behaviour of a pure BaW04-Ⅱ phase （space group P21/n, Z = 8） under hydrostatic pressures up to 14.8 GPa at ambient temperature. In each spectrum recorded for this phase, 27 Raman modes are observed, and all bands shift toward higher wavenumber with a pressure dependence ranging from 3.8 to 0.2 cm- 1/GPa. No pressure-driven phase transition occurs in the entire pressure range in this study. Our results indicate that the previously reported high pressure phase of Ba WO4 at pressure above about 10 GPa and room temperature （Errandonea et al. Phys. Rev. B 73（2006）224103） is not the BaW04-Ⅱ phase.     

高温高压下β相硼的电导率测量

 硼在高压下具有复杂的结构和多样的物理性质,对其结构和性质的深入研究具有很重要的意义,一直引起理论和实验研究领域的关注。高压下进行电学性质测量是获得物质物理性质的有效手段,利用集成在金刚石对顶砧上的微电路,在高压下和两个不同温度范围内对β相硼进行了电导率测量,分析了导电机制随压力的变化规律。在0～28.1 GPa范围内,β相硼的电导率随着压力的增大是逐渐增大的,卸压后样品的电导率不能回到最初的状态,是一个不可逆的变化过程;由室温到423 K的范围内,β硼的电导率随着温度的不断增加有明显的上升趋势,并且随着压力的升高,电导率变化逐渐加快。此外,对样品在14.5 GPa和18.6 GPa压力下,用溅射到金刚石对顶砧上的氧化铝薄膜做绝热层,对样品进行了激光加热实验,最高温度达到2 224 K,电导率随着温度的上升而增大,结果显示,β相硼的电学特征仍然属于半导体的特征范围内。     

ZrN-ZrB2纳米复合材料的高压制备及性能表征

 以金属锆粉（Zr）和六方氮化硼粉（h-BN）为原料,结合高能球磨和高温高压合成技术,制备出了ZrN-ZrB₂纳米复合材料。利用X射线衍射、透射电镜和拉曼光谱等测试手段,对材料的结构和合成规律进行了研究。结果表明,高能球磨过程中只合成出了ZrN_x,没有出现ZrB₂,从N、B原子与Zr进行固态反应的热力学和动力学方面分析了原因。利用Zr与BN粉球磨10 h后的混料,在压力为5 GPa、温度为1 300 ℃的条件下,制备出了具有高致密度的ZrN-ZrB₂纳米复合材料。其维氏显微硬度（17 GPa）、热膨胀系数（7.57×10^-6 ℃^-1）和电阻率-温度系数（8.846×10^-4 ℃^-1）等材料参数的测量结果表明,ZrN-ZrB₂复合材料是一种集优良的力学、热学和电学性能于一体的纳米复合材料。     

Compression Behaviour of Bulk Metallic Glasses and Binary Amorphous Alloy

The compression properties of Zr41Ti14Cu12.aNi10Be22.5, Zr44.4Nb7Cu13.5Ni10.8Be24.3 bulk metallic glasses and Ni77P23 binary amorphous alloy are investigated at room temperature up to 24 GPa, 39 GPa and 30.5 GPa, respectively, using in-situ high pressure energy dispersive x-ray diffraction with a synchrotron radiation source. The pressure-volume relationship of Ni77P23 amorphous alloy is consistent well with the second order BirchMurnaghan （B-M） equation within the experimental pressure range. However, under higher pressure, the experimental data of Zr-based specimens deviate from the B-M equation. Compare to the binary amorphous alloy less excess free volume existing in the bulk metallic glass and multi-component atomic configuration results in a two-stage relationship between compressibility and pressure.     

室温下压致铁钴镍合金的bcc→hcp相变

 本文采用高压X光衍射方法在金刚石对顶压砧中在位地（in situ）研究了Fe₆₈Co₂₄Ni₈（wt%）合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构，晶格常数a₀=(0.287 0±0.000 1) nm，体积V₀=(7.119±0.007) cm³/mol，密度ρ₀=(7.981±0.008) g/cm³；在20.9 GPa附近出现bcc→hcp结构相变，两相共存压力区约10 GPa，在此区域内有晶面间距d(002)_hcp=d(110)_bcc，且原子平面(002)_hcp//(110)_bcc，hcp相比bcc相体积减小(0.33±0.02) cm³/mol；高压相hcp结构的晶格参数比值c/a=1.608±0.004；相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%；用Murnaghan状态方程对实验数据进行最小二乘法拟合，得到bcc相B₀=(130±13) GPa，B₀'=12.6±0.5；hcp相V₀=(6.62±0.04) cm³/mol，B₀=(243±21) GPa，B₀'=6.8±0.3；对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。