Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Raman Investigation of BaWO4-II Phase under Hydrostatic Pressures up to 14.8GPa

The BaW04-17 phase is synthesized at 5.0 GPa and 610~C with a cubic-anvil apparatus and identified by XRD. Raman scattering measurement is carried out to investigate the phase behaviour of a pure BaW04-Ⅱ phase （space group P21/n, Z = 8） under hydrostatic pressures up to 14.8 GPa at ambient temperature. In each spectrum recorded for this phase, 27 Raman modes are observed, and all bands shift toward higher wavenumber with a pressure dependence ranging from 3.8 to 0.2 cm- 1/GPa. No pressure-driven phase transition occurs in the entire pressure range in this study. Our results indicate that the previously reported high pressure phase of Ba WO4 at pressure above about 10 GPa and room temperature （Errandonea et al. Phys. Rev. B 73（2006）224103） is not the BaW04-Ⅱ phase.     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

高压下正戊烷的稳定性研究

 利用Raman散射光谱在碳硅石压腔下研究了常温下的正戊烷从0.07~4.77 GPa的稳定性。结果表明：正戊烷的 CH₃、CH₂对称和反对称伸缩振动2 877 cm^-1、2 964 cm^-1和2 856 cm^-1、2 935 cm^-1以及－(CH₂)_n －同步扭曲振动1 303 cm^-1均随压力增大而基本呈线性向高频方向移动,并在2.47 GPa附近发生过压凝固,这是一种平衡稳定态之外的亚稳态现象。另外推测正戊烷在高压下可能发生固－固相变,最后通过平衡的固液共存相确定了正戊烷的平衡凝固压力为(1.90±0.05) GPa。     

Polarized Micro-Raman Study of the Temperature-Induced Phase Transition In 0.67 Pb（Mg1/3Nb2/3）O3-0.33PbTiO3

Polarized Raman spectra of ferroelectric relaxor 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （0.67PMN-0.33PT） single crystal are systematically investigated in a wide temperature range from -196 to 600℃ by micro-Raman scattering technique. The results clearly reveal that there are two structural phase transitions in such composite ferroelectric relaxor： the rhombohedral-tetragonal （R- T） phase transition and the tetragonal-cubic （T- C） phase transition. The former occurs at about TR-T =34℃, corresponding to the vanishing of the soft A1 mode at 106cm^-1 recorded in the parallel polarization. The latter appears at about TT-C = 144℃, which can be verified with the vanishing of mode at 780cm^-1 measured in the crossed polarization.     

Eu3+离子掺杂钛酸盐纳米管的直接水热合成与发光性能

 采用纳米管制备和离子掺杂同步进行的直接水热合成方法，合成了纯钛酸盐纳米管（TNT）和Eu³⁺离子掺杂的纳米管（TNT-Eu）；并利用X射线衍射（XRD）、透射电子显微镜（TEM）、光致发光谱仪研究了纳米管的形貌特征、物相组成、热稳定性和发光性能。结果显示：这种方法简便易行、稳定性好、产率高。钛酸盐纳米管物相可近似表示为(H,Na)₂Ti₃O₇或(H,Na)₂(Ti,Eu)₃O₇。高温处理对钛酸盐纳米管的结构产生很大的影响，450 ℃下纳米管的层状结构被破坏，晶体结构转化为锐钛矿型的TiO₂。TNT-Eu样品的发光性能较强，出现的393.5 nm、593 nm、614 nm的谱带归属于⁵D₀-⁷F₁和⁵D₀-⁷F₂电子的跃迁。     

Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices

Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis： clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.     

室温下压致铁钴镍合金的bcc→hcp相变

 本文采用高压X光衍射方法在金刚石对顶压砧中在位地（in situ）研究了Fe₆₈Co₂₄Ni₈（wt%）合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构，晶格常数a₀=(0.287 0±0.000 1) nm，体积V₀=(7.119±0.007) cm³/mol，密度ρ₀=(7.981±0.008) g/cm³；在20.9 GPa附近出现bcc→hcp结构相变，两相共存压力区约10 GPa，在此区域内有晶面间距d(002)_hcp=d(110)_bcc，且原子平面(002)_hcp//(110)_bcc，hcp相比bcc相体积减小(0.33±0.02) cm³/mol；高压相hcp结构的晶格参数比值c/a=1.608±0.004；相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%；用Murnaghan状态方程对实验数据进行最小二乘法拟合，得到bcc相B₀=(130±13) GPa，B₀'=12.6±0.5；hcp相V₀=(6.62±0.04) cm³/mol，B₀=(243±21) GPa，B₀'=6.8±0.3；对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。     

传压介质对晶格振动和相变压力的影响——α-Bi2O3的高压拉曼光谱研究

 本文分别使用4∶1的甲醇-乙醇混合溶液和固态氩做传压介质测量α-Bi₂O₃的高压拉曼光谱。实验结果表明，传压介质对样品的谱线频移速率及相变压力有明显的影响。通过对拉曼光谱的分析认定，α-Bi₂O₃在高压下可能经历了一次结构相变，在准静水压和非静水压条件下的相变压力分别为23.1 GPa和20.4 GPa。     

氧化镍（绿镍矿）等温压缩及高压相变研究

 本文采用DAC（金刚石压砧高压腔）装置，对氧化镍进行了静水压、非静水压、电导率测量等系统高压实验，获取了氧化镍等温压缩、高压相变及电导率压力效应的新结果，并在实验数据的基础上，对其高压相变与电性及磁性变化关系及体弹性模量作了分析讨论。     

PbMoO4原位高压拉曼光谱和电导率的研究

 钼酸铅（PbMoO₄）具有高的声光品质因数、低的声损耗、良好的声阻抗匹配等性质，被广泛应用于声光偏转器、调制器、可调滤光器、声表面波器件等各类声光器件，其优异的低温闪烁性能亦引起人们的注意，具有在核设备方面的应用潜力。为探讨其晶体结构和物理性质，在金刚石对顶砧上原位测量了PbMoO₄的拉曼光谱，并测量了其在几个不同压力点下电导率随温度的变化。实验发现，压力在12.5 GPa时，拉曼峰完全消失，说明压力在10.8～12.5 GPa之间PbMoO₄样品出现了非晶态转变。当从26.5 GPa卸压到9.4 GPa时，PbMoO₄的拉曼谱在低波数出现无序化，而在2.4 GPa压力下858 cm^-1峰又重新出现，说明样品结构由无序向晶化回复。压力在10.8 GPa以上时，电导率随着温度的增加而显著增加，且随着压力的增加也明显增加。     

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect engineering for SiO2 precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen （SIMOX）. Cavities axe created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120 keV 8.0 ×1016 cm 2 0 ions. The Q ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectionM transmission electron microscopy （XTEM）, Fourier transform infrared absorbance spectrometry （FTIR） and atomic force microscopy （AFM） measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.     

Locally Rotationally Symmetric Bianchi Type-I Model with Time Varying Λ Term

We investigate the locally rotationally symmetric (LRS) Bianchi type-I cosmological model for stiff matter and a vacuum solution with a cosmological term proportional to R^-m (R is the scale factor and m is a positive constant). The cosmological term decreases with time. We obtain that for both the cases the present universe is accelerating with a large fraction of cosmological density in the form of a cosmological term.     

In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4

In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell （DAC） under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.     

Pressure-induced isostructural phase transition in Bi2Sr2CaCu2O8+δ

The high-pressure structures of an underdoped cuprate superconductor Bi₂Sr₂CaCu₂O_8+δ have been studied by synchrotron X-ray diffraction at pressures up to 36.5 GPa. We find that this superconductor retains its orthogonal structure with the space group Amaa in the pressure range studied. Upon compression, both the a and b axes first shrink monotonically up to 17.4 GPa from their ambient pressure values and keep these behaviors with positive compressibilities up to 36.5 GPa after experiencing expansion with negative compressibilities in the pressure regime between 17.4 and 23.7 GPa. However, the c axis decreases continuously with increasing pressure with a slow change at about 23.7 GPa. The results indicate an isostructural phase transition starting at 17.4 GPa and a structural collapse at around 23.7 GPa.     

压力对GdoBr:Eu晶场参数的影响

 在室温下测量了GdoBr:Eu的常压和高压荧光谱，光谱范围在13 000~21 500 cm^-1之间，压力至12 GPa。由光谱数据得到了Eu³⁺晶场能级随压力的变化曲线。⁷F_0～5能级随压力的变化规律比较复杂，而⁵D_0~2各能均随压力的升高几乎线性地降低。在基态谱项⁷F的49个状态上进行了晶场拟合计算，所得常压下的5个非零晶场参数分别为：B₀²＝-1 124.0 cm^-1，B₀⁴＝-969.6 cm^-1，B₄⁴＝827.9 cm^-1，B₀⁶＝889.6 cm^-1，B₄⁶＝377.0 cm^-1。高压下的计算结果表明，B₀⁴、B₀⁶这两个晶场参数随压力的增加而增大，B₄⁶随压力的增加而减小，而B₀²、B₄⁴随压力的变化有些起伏。晶场强度在8 GPa以下随压力增加而减小，其后开始变强。     

50 GPa下NiO等温状态方程的高压X光研究

 本文采用在位的（in situ）高压X光衍射方法研究了近50 GPa和室温下三方结构NiO的等温压缩行为，并用Murnaghan状态方程对实验值进行了最小二乘法拟合，得到的NiO室温状态方程的相应参量分别为：B₀=223 GPa，B₀'=4.21。在室温压力范围内没有观察到第一类结构相变。NiO在六方指标下的轴比c/a随压力的变化在实验压力范围内可用c/a=2.450~1.569×10^-3（GPa）近似描述。     

High-pressure Raman and infrared spectroscopic studies of ZrP2O7

High-pressure Raman and mid-infrared spectroscopic studies were carried out on ZrP₂O₇ to 23.2 and 13 GPa respectively. In the pressure range 0.7–4.3 GPa the lattice mode at 248 cm^?1 disappears, new modes appear around 380 and 1111 cm^?1 and the strong symmetric stretching mode at 476 cm^?1 softens, possibly indicating a subtle phase transition. Above 8 GPa all the modes broaden, and all of the Raman modes disappear beyond 18 GPa. On decompression from the highest pressure, 23.2, to 0 GPa all of the modes reappear but with larger full width at half maximum. Lattice dynamics of the high temperature phase of ZrP₂O₇ were studied using first principles method and compared with experimental values.     

高岭石的高温高压相图及其地学意义

 用阻抗匹配法和PZT压电探针技术,在100 GPa的冲击压力范围内测量了初始密度分别为1.375 g/cm³和2.001 g/cm³两种孔隙度叙永石样品的Hugoniot状态方程。根据其p_H-ρ_H线所给出的高温高压相变点,用Grüneisen状态方程计算其相变点压力所对应的温度,并结合常压下受热相变的温度值,建立了“高岭石/Al₂O₃+SiO₂+H₂O”的温度-压力相平衡图。通过该相图与线性地热线的交点推断：高岭石至少可在上地幔50 km深处作为一种含水（OH^-）矿物而稳定存在;或在俯冲板块中至少于133 km深处作为一种含水（OH^-）泥质沉积物的过渡相而存在。     

立方氮化硼的振动光谱及反射光谱的研究

 将黑色、黄色、棕色三种小于50 μm立方氮化硼粉末为样品，研究了其红外光谱、拉曼光谱、反射光谱，结果表明：（1）样品的红外光谱中，1 818 cm^-1和1 548 cm^-1属于cBN的晶格本征振动，而立方氮化硼的晶格本征振动外的晶体缺陷吸收则发生在~800 cm^-1，1 580 cm^-1~1 740 cm^-1和大于2 400 cm^-1处。（2）拉曼光谱测试表明，在1 052 cm^-1和1 304 cm^-1附近出现的散射与cBN不具有反演中心及cBN具有立方结构这样的事实相一致，并且这种散射伴随着布里渊区中心声子的横向和纵向发射。144 cm^-1附近出现的散射，被认为是由于局部振荡模式的出现，在反斯托克斯区造成的信号，这与晶格中杂质缺陷有关。（3）依据得到的反射光谱，计算了cBN单晶禁带宽度，发现这三种cBN都具有大于金刚石的禁带宽度值，分别为：E_g(黑)=6.21 eV，E_g(黄)=5.73 eV，E_g(棕)=5.71 eV。