p–N(A)Drell–Yan过程K因子的非常数性和核环境影响

在微扰QCD α_s 阶(NLO)近似和核(A)的部分子分布函数采用双重Q²重标度模型(DQ²RM)下,讨论了p-N(A)Drell-Yan过程中K因子的变化.结果表明K因子不能近似当作常数.它随靶核子中部分子相关的运动学变量x_T(A)显著变化.在ISR和SppS能区,当2×10^－3≤x_T(A)<1时,K因子随x_T(A)减小而显著减小;而x_T(A)<2×10^－3 时随x_T(A)继续减小又显著增加.K因子对核(A)也有一定依赖性,这也是在x_T(A)小时较为明显.这种认识对于在超高能对撞区利用Drell-Yan过程(或其类似过程)精确检验某些模型或物理量都是重要的.     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

替代式合金系统的电阻率

本文将文献[1]的无序晶态合金电阻率理论推广到包含长程有序的系统,从而建立了适用于晶态金属,无序及有序替代式合金的Ziman型电阻率理论。根据这个理论我们详细讨论了这类系统电阻率的温度依赖性。文中着重指出:合金系统结构因子的超结构峰对电阻率有重要贡献。这个贡献在低温下是一个T²项,它比电子-电子散射引起的T²项大得多,因而合金系统电阻率在T<<Θ(Θ是德拜温度)时有ρ≈ρ₀+ρ_a(T/Θ)²+ρ_i(T/Θ)⁵的形式。据此,许多A-15化合物正常态电阻率在低温下的反常行为很容易解释。作为例子,我们将低温电阻率的理论表达式与V₃Si的测量值作了比较,符合得很好。     

电解有机溶液法制备CNx薄膜

在60℃和常压下,电解甲醇和脲的混合溶液在硅基片上沉积CN_x薄膜．傅里叶红外和Raman测试表明,所得薄膜是非晶态的,碳和氮主要是以C—N,C—C,C＝C和C＝N的形式成键,有少量的碳和氮以C≡N的形式成键．X射线光电子能谱测试表明,氮是以SP²和SP³杂化形式与碳化学成键来成膜的．测试结果表明通过液相沉积法所得CN_x薄膜与汽相沉积法所得CN_x薄膜的结构比较接近.     

无序晶态合金的电阻率

基于Baym原则,将Ziman型液态金属电阻理论推广到晶态金属及替代式的无序合金系统,给出了电阻率的一般表达式,讨论了它们的低温和高温行为。低温下用德拜晶格振动模型,无序晶态系统的电阻率可表为ρ=ρ₀+ρ_d(T/Θ)²+ρ_i(T/Θ)⁵,与实验一致。高温下,考虑到Debye-Waller因子及多声子效应,电阻率趋向饱和。用独立原子振动近似得到的简单公式与实验资料的比较表明:类似Nb这种电阻率的高温非线性偏离可以在本文的模型中自然地得到说明。     

作用表示波动方程中与面有关项

这篇短文的内容是:(i)对於量子场论中的i(δψ[σ])/(δσ(x))=V(x,σ)ψ[σ] 如何由寻常的“曲面上的薛定谔方程”导出,作一个较严格的讨论,以及 (ii)讨论上式中的V(x,σ)在什么条件下不包含有σ。我们证明了所需的条件是 (?L^I)/(?φ_μ) (?L^I)/(?φ_ν)=(?²L)/(?φ_μ?φ_ν)F(φ,φ_ρ),式中L,L^I代表总拉格朗日及作用拉格朗日,φ代表场量,φ_μ代表φ/x^μ,F(φ,φ_ρ)代表φ及φ_μ的一个任意函数。     

Gd0.55Sr0.45MnO3薄膜光诱导电阻变化特性研究

分别采用固相反应和脉冲激光沉积的方法制备了电荷-轨道有序态锰氧化物Gd_0.55Sr_0.45MnO₃块材和多晶薄膜, 研究了薄膜在光诱导作用下的电阻变化特性. 实验结果表明该薄膜在整个测量温度范围内表现出了半导体型导电特性. 利用变程跳跃模型拟合电阻温度关系可知, 其电荷有序态转变温度为70 K. 激光作用致使薄膜电阻减小, 当激光功率度为40 mW/mm²时, 最大光致电阻相对变化值可达99.8%, 且在8 s的时间内达到了平衡态, 温度对其影响很小; 当激光功率度为6 mW/mm²时, 获得的最大光致电阻相对变化值为44%, 而且时间常数随温度的升高而增大, 这主要是由于光诱导和热扰动共同作用的结果.     

高能电子对原子核C12的弹性散射

In this paper, we have calculated the elastic scattering of high energy electrons with nuclei C¹² by phase shift calculation.We take the charge distribution of the nucleus C¹² as following:(1) exponential distribution:ρ(x)=ρ₀θ^-x/a, (2) gaussian distribution:ρ(x)=ρ₀e^(-x2/a2),(3) uniform distribution: ρ(x) ={ρ₀ when 0kR, where a and b are the parameters, and the constant R is the radius of the nucleus C¹². The energy of the electrons is 187 Mev.The result of the calculation shows that the gaussian distribution confirms the experimental result better than the other two kinds of distributions, and gives R=(12)^1/3r₀, where r₀=1.35×10^-13 cm.     

Gd基非晶与Gd纳米晶复合结构的磁制冷效应

通过调控冷却速率和成分配比, 制备出了Gd基非晶与Gd纳米晶的复合材料. 采用X射线衍射、热分析、原子力和磁力显微镜对其微结构进行表征, 从多个角度证实了非晶/纳米晶的复合结构. 磁性测试结果表明: 内生的纳米晶颗粒能有效改善非晶基体的磁熵效应, 相对于Gd基块体纯非晶和Gd单质, 复合体系的磁制冷效率大幅提高达到了10³ J. kg^-1; 磁熵变化峰Δ S _m的半高宽超过纯Gd的5倍; 最大磁熵变区出现平台区,但Δ S _m峰值有待于进一步提高. 理论分析表明, 复合结构中超顺磁纳米团簇的形成有效提高了磁制冷温区和效率. 结合磁滞小和电阻大等优点, Gd基非晶/Gd纳米晶复合材料具有一定的发展潜力.     

巨磁电阻材料La0.9Sr0.1MnO3与半导体Si组成的二极管的整流特性

掺杂锰氧化物La_0.9Sr_0.1MnO₃薄膜被直接沉积在n型 硅基片上，构成p-n结.这种p-n结在很宽的温度范围内都有很好的整流特性.研究结果表明， 这种p-n结的结电阻对低磁场敏感，在3×10^-2T的磁场下，磁电阻可达70％.磁 电阻的正负依赖于温度.磁电阻的大小可通过加在p-n结上的电压调节.     

MoxGe1-x,MoxSi1-x薄膜的非晶形成成份及超导转变温度

用直流吸气溅射法在液氮冷底板上分别制备了Mo_xGe_1-x,Mo_xSi_1-x的薄膜。其形成非晶的成份分别为Ge>22at%,Si>18at％。超导转变临界温度T_c在非晶状态下随着Ge,Si的含量增加而下降(约6—3K)。非晶Mo₇₇Ge₂₃膜的晶化温度为780℃,而非晶Mo₇₈Si₂₂膜的晶化温度为480℃。 关键词：     

掺饵氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiO_{x∶H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和 1.76时,分别对应77Ｋ和室温测量时最强的1.54μm光致发光.从15到250Ｋ的变温实验显示 出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个 复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解 释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250Ｋ,光致发光强度减弱约1/2. 关键词： 铒 光致发光 氧含量}     

Amorphization of crystalline Co and Sn multilayers by solid state reaction

Co_xSn_1?x amorphous alloys have been formed by solid state reaction at room temperature, from polycrystalline multilayers of Co and Sn deposited at 77 K. The forming ability range, temperature variation of the resistance, crystallization temperature of the amorphous alloys obtained by this new technique are very similar to those of amorphous Co_xSn_1?x alloys formed by vapour quenching.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Structure and d.c. conductivity of amorphous Si1−xSnx alloys

Amorphous Si_1?xSn_x alloys have been prepared by vapor deposition at a pressure of about 10^?8 Torr on substrates maintained at 77 K. Density measurements and electron diffraction show that Sn atoms are substituted for Si in a random continuous network. The d.c. resistivity of samples of stabilized structure is correctly described by the variable range hopping formula. Structural changes are revealed by the variation of the resistivity at 77 K of samples annealed from 77 K to the crystallization temperature.     

Conversion electron Mössbauer study of amorphous FeSi thin films

Amorphous FeSi films deposited at 77 K and at room temperature were studied by CEMS. The CEMS reflection spectra for bulk FeSi show quadrupole splittings, ΔE_S, larger by ～ 0.04 mm sec^?1 than ΔE_B - the ones shown by transmission spectra.For amorphous FeSi films ΔE was found (a) to decrease with the thickness of the film, and (b) to be by 25% larger for an amorphous film than for a crystallized one (of the same thickness).The crystallization was found to start at 240°C for a 300 Å thick film.     

热处理对非晶态合金Nd4Fe96-xBx磁性的影响

本文研究了用单辊急冷方法制备的非晶态合金Nd₄Fe_96-xB_x的晶化,以及热处理对其硬磁性和相组成的影响,发现非晶态合金Nd₄Fe_96-xB_x的晶化温度比相同B含量的非晶态合金Fe_100-xB_x高120—190K,X射线衍射和热磁测量表明,15≤x≤25的样品晶化相是由Nd₂Fe₁₄B(T 关键词：     

Structure and stability of Fe−Mg amorphous alloys prepared by coevaporation

The structure, stability and magnetic properties at 77K of Fe₆₀Mg₄₀ amorphous thin films prepared by coevaporation are investigated using mainly Mössbauer effect working in scattering geometry and transmission electron microscopy. The temperature range of the amorphous to crystal transition is determined; moreover a superparamagnetic-like behaviour of the films is pointed out at 77K.

     

Ion irradiation—a technique providing a criterion to distinguish between amorphous and nanocrystalline In1−x Pd x films

In_1–x Pd _x films with 0.2x0.75 have been prepared by vapour quenching at 4.2 K or 77 K, respectively. To test whether amorphous (a-) phases can be obtained in this way, the resistance behavior and the electron diffraction patterns of the as-prepared and annealed films were studied insitu. For films withx=0.25 additional information could be acquired from their superconducting behavior. Combining these results one concludes that a-phases exist for the compositional range 0.2x0.6, which are stable up to crystallization temperaturesT _x within the range 250 KT _x 420 K. Irradiation of the crystallized films at low temperatures (4.2 K or 77 K) with heavy ions (350 keV Ar⁺ or Kr⁺) leads to complete re-amorphization. Forx=0.67 corresponding to InPd₂ a nanocrystalline (n-) phase is obtained by vapour quenching at 77 K as inferred from x-ray diffraction. AtT _x =700 K, thesen-films exhibit a drop of the electrical resistance indicating the beginning of significant grain growth. After recooling, Kr⁺ bombardment at 77 K does not restore the high electrical resistance of the as-quenchedn-film. This result can be used as a criterion when studying quenched films withx=0.625 corresponding to In₃Pd₅. In this case, a resistance drop is found atT _x =600 K, but the diffraction techniques do not allow an uniquevocal distinction between amorphous and nanocrystalline. This becomes possible by low temperature ion irradiation after annealing atT>T _x . The bombardment results in resistance changes, which saturate well-below the value of the as-quenched sample implying nanocrystallinity for the latter. Based on this criterion, a phase-diagram for quenched In_1–x Pd _x is provided with 0x1 containing the newly detecteda- andn-phases.     

Sm-Fe和Sm-Co非晶态合金薄膜的高场热磁效应

本文研究了Sm_xT_1-x(T=Fe,Co)非晶态薄膜的磁化强度σ与温度T的关系。发现在磁场H=7T下,对Sm_xCo_1-x样品(x=0.46,0.48,0.54,0.65)的升温过程测得的σ(T)曲线上有极大值,它对应的温度都在25—28K范围内,与成分关系不大。非晶态Sm_xFe_1-x(x=0.46,0.73)的结果与之不同,极大值对应的温度与成分有关。对上述样品,还发现在T≈6K附近σ(T)有极小值(和陡变),在近室温端,出现σ(T)下降缓慢的“拖尾巴”现象。我们认为,Sm-Co非晶态薄膜表现的高场热磁效应可能起源于Sm原子磁矩对磁化的贡献不可忽略,作用在Sm原子上的局域无规各向异性很强;这种各向异性在20—30K变化较大。而Sm-Fe薄膜的高场热磁效应可能起源于Fe原子磁矩的分散。σ(T)在6K附近的极小值(和陡变)及其在室温端变化缓慢的原因,可能是合金成分的涨落所致。 关键词：