替代式合金系统的电阻率

本文将文献[1]的无序晶态合金电阻率理论推广到包含长程有序的系统,从而建立了适用于晶态金属,无序及有序替代式合金的Ziman型电阻率理论。根据这个理论我们详细讨论了这类系统电阻率的温度依赖性。文中着重指出:合金系统结构因子的超结构峰对电阻率有重要贡献。这个贡献在低温下是一个T²项,它比电子-电子散射引起的T²项大得多,因而合金系统电阻率在T<<Θ(Θ是德拜温度)时有ρ≈ρ₀+ρ_a(T/Θ)²+ρ_i(T/Θ)⁵的形式。据此,许多A-15化合物正常态电阻率在低温下的反常行为很容易解释。作为例子,我们将低温电阻率的理论表达式与V₃Si的测量值作了比较,符合得很好。     

Pentaquark Θ+的介质效应

在密度相关的相对论平均场理论基础上, 假定Θ⁺通过交换有效的同位旋标量介子σ和ω与其他重子发生相互作用, 研究了强子在包含Θ⁺的奇异核物质中的性质改变. 讨论并计算了介质中的Θ⁺和核子有效质量及其对重子密度的依赖关系, 分析了Θ⁺在核物质中包含的成分大小以及核子的同位旋效应对奇异核物质性质的影响, 进一步计算了不同重子组成比例下奇异核物质的标量密度ρ_S和矢量密度ρ_B的对应曲线.     

具有双Y-型结构的Θ+的研究

采用由单胶子交换产生的库仑势加上流管模型给出的双Y-型禁闭势之和的相互作用势,分别计算了正、负宇称态的Θ⁺的质量, 给出负宇称态Θ⁺的质量为1.935GeV, 正宇称态Θ⁺的质量为2.082GeV. 其中较低的负宇称态仍比实验给出的Θ⁺(1540)的共振峰高出近400MeV.     

采用二维坐标和变分方法计算磷烷阳离子的伞型振动

提出一个新的二维变分方法计算PH₃⁺(X²A₂")的对称伸缩振动(v1)和伞形振动(v2). 因为采用了对称化的笛卡尔坐标,所以动能项变得简单,同时伞形振动模式也能得到很好的反映. 相比采用经常使用的一维模型计算伞形振动,这个二维模型不需要约化质量的假设,同时也考虑了v1和v2振动模式之间的相互作用. 用二维模型对PH₃⁺首次进行了计算, 前七个能级的理论值和实验值的平均相对误差小于3 cm^{-1. 用相同的方法也计算了NH₃,结果没有PH₃+理想,说明这个方法有一定的局限性.}     

Ti+(CO2)2Ar和Ti+(CO2)n(n=3-7)络合物离子的红外光解离光谱 (cited: 1)

利用脉冲激光溅射-超声分子束载带方法制备了气相Ti⁺(CO₂)₂Ar和Ti⁺(CO₂)_n(n=3-7)络合物离子．采用红外光解离光谱研究了这些选定的质量离子的振动光谱． 对于每一种络合物离子, 在CO伸缩振动频率范围都观察到了振动峰,表明这些离子具有插入的OTi⁺CO(CO₂)_n-1结构． 对于n≦5的OTi⁺CO(CO₂)_n-1离子,其CO振动和CO₂的反对称伸缩振动频率都比自由的CO和CO₂的频率要高,表明CO和CO₂配体与中心金属离子之间主要是静电相互作用．实验结果还表明TiO⁺可以直接络合五个配体(1个CO和4个CO₂分子)．对于n=2络合物体系,除了插入的OTi⁺CO(CO₂)结构以外,还观察到了具有弯曲结构的OCO-Ti⁺-OCO异构体的存在     

氮化钒的选态双色可见紫外共振增强光电离和脉冲场光电子研究 (cited: 4)

对气态氮化钒(VN)分子在光子总能量为56900～59020 cm^-13∏0, v'=0)的单转动态, 然后再被紫外激光电离．这样的双色激光模式可以测量电子态、振动态和转动态都被选择和解析的氮化钒阳离子VN⁺(X²△; v⁺=0, 1, 2)光谱． 通过对转动解析的PFI-PE光谱模拟分析, 确定J⁺=3/2为基态离子态的最低转动能级, 从而确认VN⁺的基态电子态为²△_3/2．通过对VN+(PFI-PE)光谱的分析得到如下物理量的精确数值：VN⁺(X²△_3/2)的绝热电离能为IE(VN)=56909.5±0.8 cm^-1(7.05588±0.00010 eV),振动常数ω_e⁺=1068.0±0.8 cm^-1,反常振动常数ω_e⁺χ_e⁺=5.8±0.8 cm^-1;VN⁺(X²△_3/2)的转动常数B_e⁺=0.6563±0.0005 cm^-1,α_e⁺=0.0069±0.0004 cm^-1,平衡键长为1.529 ?;VN⁺(X²△_5/2)的转动常数B_e⁺=0.6578±0.0028 cm^-1,α_e⁺=0.0085±0.0028 cm^-1,平衡键长为1.527 ?;X²△_5/2,3/2自旋轨道耦合常数A=153.3±0.8 cm^-1     

AsO+同位素离子X2∑+和A2∏电子态的多参考组态相互作用方法研究

采用包含Davidson修正多参考组态相互作用(MRCI)方法结合价态范围内的最大相关一致基As/aug-cc-pV5Z和O/aug-cc-pV6Z, 计算了AsO⁺ (X²∑⁺)和AsO⁺(A²∏)的势能曲线. 利用AsO⁺离子的势能曲线在同位素质量修正的基础上, 拟合出了同位素离子⁷⁵As¹⁶O⁺和⁷⁵As¹⁸O⁺的两个电子态光谱常数. 对于X²∑⁺态的主要同位素离子⁷⁵As¹⁶O⁺, 其光谱常数R_e, ω_e, ω_ex_e, B_e和α_e分别为 0.15770 nm, 1091.07 cm^-1, 5.02017 cm^-1, 0.514826 cm^-1和0.003123 cm^-1; 对于A²∏态的主要同位素离子⁷⁵As¹⁶O⁺, 其T_e, R_e, ω_e, ω_ex_e, B_e和α_e分别为5.248 eV, 0.16982 nm, 776.848 cm^-1, 6.71941 cm^-1, 0.443385 cm^-1和0.003948 cm^-1. 这些数据与已有的实验结果均符合很好. 通过求解核运动的径向薛定谔方程, 找到了J=0时AsO⁺(X²∑⁺)和AsO⁺(A²∏)的前20个振动态. 对于每一振动态, 还分别计算了它的振动能级、转动惯量及离心畸变常数, 并进行了同位素质量修正, 得到各同位素离子的分子常数. 这些结果与已有的实验值非常一致. 本文对于同位素离子⁷⁵As¹⁶O⁺(X¹∑⁺), ⁷⁵As¹⁸O⁺(X¹∑⁺), ⁷⁵As¹⁶O⁺(A¹∏)和⁷⁵As¹⁶O⁺(A¹∏)的光谱常数和分子常数属首次报导.     

在193 nm关于Si2分子的离子解离动力学的成像研究

在193 nm的单色激光实验中,本文利用时间切片离子速度成像技术,研究了经193 nm双光子电离得到的Si₂⁺的解离反应动力学过程. 根据实验得到的Si⁺离子的速度成像,观测到了两种离子直接解离通道：Si(³P_g)+Si⁺(²P_u)和Si(¹D₂)+Si⁺(²P_u). 电子基态的Si₂分子处于v=0∽5的振动态上,其经过双光子电离后激发到Si₂⁺离子的多个电子激发态势能面,生成主要通道Si(³P_g)+Si⁺(²P_u),其中v=1的解离信号最强. 此外,由于势能曲线2²Π_g与3²Π_g相同对称性引起的避免性势能面交叉,生成次要反应通道Si(¹D₂)+Si⁺(²P_u). 通道Si(¹D₂)+Si⁺(²P_u)的产物亦可以由生成的基态Si₂⁺(X⁴Σ_g^-)吸收一个193 nm光子后解离得到,其对应产物则具有更大的动能.     

OCS+分子经由B2∑+←X2∏跃迁的光解离谱

制备出确定旋轨态的OCS⁺(X²∏)离子,在260～325 nm波长范围内研究了OCS^{+经由B2∑+←X2∏_3/2(000)和B2∑+←X2∏_1/2(000,001)跃迁的分质量光解离谱．由光解离谱得到OCS+(B2∑+)电子态的光谱常数υ1(CS stretch)=828.9(810.4) cm-1,υ2(bend)=491.3 cm-1和υ3(CO stretch)=1887.2 cm-1．在B2∑+←X2∏跃迁谱中只能观察到B2∑+(010)←X2∏_1/2(000)跃迁的谱峰, 而观察不到B2∑+←X2∏_3/2(000)跃迁的谱峰． 用X2∏电子态的(000)2∏_1/2和(010)2∑+_1/2电子振动能级之间的K耦合解释了这种B2∑+的υ2弯曲振动模的激发对X2∏电子态的旋轨分裂分量(Ω=1/2,3/2)的相关性}     

层子模型中重子的半轻子衰变和高能中微子反应

本文从层子模型的结构观点出发,应用文献[1]中的层子与轻子的弱相互作用等效哈密顿量和文献[2]中给出的(1/2)⁺重子波函数及文献[3]中定出的参数,对(1/2)⁺重子的半轻子衰变和高能中微子的弹性和准弹性反应进行了讨论。文中得到的(1/2)⁺重子的半轻子衰变的理论结果与实验符合较好;得到的ΔS=0过程的轴矢形状因子和ν_μ+n→p+μ^-过程的截面在误差范围内均与实验相符合;得到的ΔS=1过程的轴矢形状因子和ν_μ+p→Λ+μ⁺过程的截面与目前实验给出的粗略结果也是符合的。特别需要指出的是,本文在讨论反应问题时,理论中所包含的参数全部从电磁过程定出,在给出的轴矢形状因子和截面公式中没有引进新的参数。     

Temperature and concentration dependences of the electrical resistivity for alloys of plutonium with americium under normal conditions

The temperature and concentration dependences of the electrical resistivity for alloys of americium with plutonium are analyzed in terms of the multiband conductivity model for binary disordered substitution-type alloys. For the case of high temperatures (T > Θ_D, Θ_D is the Debye temperature), a system of self-consistent equations of the coherent potential approximation has been derived for the scattering of conduction electrons by impurities and phonons without any constraints on the interaction intensity. The definitions of the shift and broadening operator for a single-electron level are used to show qualitatively and quantitatively that the pattern of the temperature dependence of the electrical resistivity for alloys is determined by the balance between the coherent and incoherent contributions to the electron-phonon scattering and that the interference conduction electron scattering mechanism can be the main cause of the negative temperature coefficient of resistivity observed in some alloys involving actinides. It is shown that the great values of the observed resistivity may be attributable to interband transitions of charge carriers and renormalization of their effective mass through strong s-d band hybridization. The concentration and temperature dependences of the resistivity for alloys of plutonium and americium calculated in terms of the derived conductivity model are compared with the available experimental data.     

Anomalous electrical conduction in disordered and non-crystalline metallic conductors

Many disordered and non-crystalline metallic conductors are characterized by both a negative temperature coefficient (α = ?^-1 d?/dT) of resistivity ? over a wide range of temperatures T and a gradual leveling-off of ? at low temperatures. Experimental results will be presented to show that ? varies as -?n T (for T ? the Debye temperature) in contrast to the prediction of existing theories. This anomalous electron transport can be understood in terms of an attractive interaction between conduction electrons and localized excitations arising from a structural indeterminacy in the atomic arrangement. The possibility of using this scattering mechanism to explain the unusual deviation from linear T dependence of resistivity (the bulge effect) in many structurally unstable superconductors such as A-15 Nb₃Ge, V₃Si, bcc Nb and alloys containing the ω-phase is also discussed.     

Thermodynamic and kinetic properties of an icosahedral quasicrystalline phase in the Al-Pd-Tc system

The properties of a quasicrystalline phase in the Al-Pd-Tc system are studied for the first time. X-ray investigations demonstrate that the quasicrystalline phase in the Al₇₀Pd₂₁Tc₉ alloy has a face-centered icosahedral quasi-lattice with parameter a=6.514 ?. Annealing experiments have revealed that this icosahedral phase is thermodynamically stable. The heat capacity of an Al₇₀Pd₂₁Tc₉ sample is measured in the temperature range 3–30 K. The electrical resistivity and magnetic susceptibility are determined in the temperature range 2–300 K. The electrical resistivity is found to be high (600 μΩ cm at room temperature), which is typical of quasicrystals. The temperature coefficient of electrical resistivity is small and positive at temperatures above 50 K and negative at temperatures below 50 K. The magnetic susceptibility has a weakly paramagnetic character. The coefficient of linear contribution to heat capacity (γ=0.24 mJ/(g-atom K²)) and the Debye characteristic temperature (Θ=410 K) are determined. The origin of the specific features in the vibrational spectrum of the quasicrystals is discussed. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 12, 2000, pp. 2113–2119. Original Russian Text Copyright ? 2000 by Mikheeva, Panova, Teplov, Khlopkin, Chernoplekov, Shikov.     

纳米金属镝的传导电子定域化

研究不同粒径的稀土金属镝(Dy)纳米晶块体材料的电阻率随温度的变化. 电阻率包括剩余电阻率ρ_res=ρ(0)、磁散射电阻率ρ_mag(T)和声子散射电阻率ρ_pho(T). 样品的平均粒径分别为10,30,100和1000 nm. 实验发现磁散射电阻率ρ_mag(T)和声子散射电阻率ρ_{pho 关键词： 镝金属电性 定域化 能带论 无序}     

Electrical behavior of some silver-doped lanthanum-based CMR materials

With a view to understand the structural, magnetic and electrical properties of La_1−xAg_xMnO₃ (x=0.05-0.3), a series of samples were prepared by polyvinyl alcohol (PVA) gel route. It has been found that both the metal-insulator and ferro- to paramagnetic transition temperatures after increasing up to the composition x=0.20, are found to remain constant thereafter. The electrical resistivity vs. temperature plot of the sample x=0.10 is found to exhibit an insulating behavior below 36 K, while the sample, x=0.20 exhibits two peaks, and the observed behavior is explained on the basis of the phase separation model. The low-temperature (T<T_P), electrical resistivity data were analyzed by a theoretical model, ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of grain/domain boundary effects, electron-electron and two-magnon scattering processes. The low-temperature resistivity data (T<50 K) were fitted to an equation, which is based on the combined effect of weak localization, electron-electron and electron-phonon scattering.     

Interpretation of temperature dependence of the in-plane electrical resistivity in YBa2Cu4O8: Electron–phonon approach

In this paper, we undertake a quantitative analysis of observed temperature-dependent in-plane normal state electrical resistivity of single crystal YBa₂Cu₄O₈. The analysis is within the framework of classical electron–phonon i.e., Bloch-Gruneisen model of resistivity. It is based on the inherent acoustic (low frequency) phonons (ω_ac) as well as high frequency optical phonons (ω_op), the contributions to the phonon resistivity were first estimated. The optical phonons of the oxygen breathing mode yields a relatively larger contribution to the resistivity compared to the contribution of acoustic phonons. Estimated contribution to in-plane electrical resistivity by considering both phonons i.e., ω_ac and ω_op, along with the zero-limited resistivity, when subtracted from single crystal data infers a quadratic temperature dependence over most of the temperature range [80 ? T ? 300]. Quadratic temperature dependence of ρ_diff. = [ρ_exp − {ρ₀ + ρ_e−ph (=ρ_ac + ρ_op)}] is understood in terms of electron–electron inelastic scattering. The relevant energy gap expressions within the Nambu-Eliashberg approach are solved imposing experimental constraints on their solution (critical temperature T_c). It is found that the indirect-exchange formalism provides a unique set of electronic parameters [electron–phonon (λ_ph), electron-charge fluctuations (λ_pl), electron–electron (μ) and Coulomb screening parameter (μ^*)] which, in particular, reproduce the reported value of T_c.     

Fe掺杂对自旋梯状化合物Sr14(Cu1－yFey)24O41的结构和电输运性质的影响

采用常规的固相合成法分别制备了Fe³⁺掺杂和2/3Fe³⁺+1/3Fe²⁺混合Fe离子掺杂的两组Sr₁₄(Cu_1-yFe_y)₂₄O₄₁系列样品.X射线衍射分析显示，当Fe³⁺离子的掺杂量y≤0.03以及2/3Fe³⁺+1/3Fe²⁺混合Fe离子掺杂量y≤0.02时，样 关键词： 强关联电子系统 自旋梯状结构化合物 晶体结构 电输运性质     

Magnetic and electrical behavior of La1−xAxMnO3 (A=Li, Na, K and Rb) manganites

With a view to understand the magnetic and electrical behavior of monovalent substituted lanthanum manganites, a series of materials were prepared by sol-gel route by sintering at 1200 °C. The X-ray diffraction data were analyzed using Rietveld refinement technique and it has been found that all the samples were found to crystallize into rhombohedral structure with R3¯c space group. The values of ferro to paramagnetic (T_C) and metal-insulator transition (T_P) temperatures were obtained using ac susceptibility and electrical resistivity data, respectively. It has been found that sodium-, potassium- and rubidium-doped samples exhibit two peaks in the electrical resistivity vs. temperature plots. The observed behavior has been explained on the basis of oxygen deficiency present in the samples. The electrical resistivity data were analyzed using various theoretical models and it has been concluded that the electrical resistivity data in the low-temperature regime (T<T_P) can be explained using the equation ρ_(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, signifying the importance of the grain/domain boundary, electron-electron and two magnon scattering processes. On the other hand, the high-temperature resisitivity data (T>T_P) were explained using variable range and small polaron hopping mechanisms.