PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

Cr,Tm,Ho：YAG中Tm→Ho的能量转移

本文采用Boltzmann分布近似，计算了不同温度下Tm→Ho的净能量转移，计算了实验中不同温度下Ho^3 离子的荧光发射强度在整个Tm-Ho体系荧光发射中的比例，我们的实验和计算表明，对Tm-Ho准三能级体系采用Boltzmann分布近似，其计算结果是可信的。     

正庚烷在β沸石负载碳化钼催化剂上的异构化研究

利用程序升温还原法制备了β沸石负载碳化钼催化剂。XRD表征显示，利用正戊烷作为碳源得到了对异构化具有活性的βMo2C。以正庚烷为模型反应物，在连续流动固定床反应装置上考察了温度、压力、空速和氢烃比对βMo2C/β沸石催化剂临氢异构化反应性能的影响。获得了β沸石负载碳化钼催化剂上正庚烷异构化的最佳反应条件温度270℃～275℃，压力1.0MPa～1.5MPa，体积空速1.0h－1，氢烃体积比200∶1。在最佳条件下反应物转化率为82%，选择性和异构产物收率分别达到71%和58%。     

BP神经网络-FTIR方法测定苯乙烯-丙烯酸丁酯共聚物中单体含量

利用红外特征峰波数偏移值与单体含量间的非线性定量关系,BP人工神经网络-FTIR法在较宽的含量范围(10%-90%之间)之内,准确测定了苯乙烯-丙烯酸丁酯共聚物中丙烯酸丁酯单体含量,回收率在97.3%-101.8%之间.     

1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS

Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N₂ ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.     

圆柱绕流三维不稳定性的低维Galerkin法分析

利用低维Ｇａｌｅｒｋｉｎ方法及Ｆｌｏｑｕｅｔ稳定性分析理论,计算分析了圆柱绕流的三维线性不稳定性．分析中构造了能较好描述尾迹区流动的周向基函数,建立了完备的合理的基函数组,改进了计算机算法．结果证实圆柱二维周期流对展向小扰动为不稳定的,正确地预计了出现三维长波不稳定性的临界雷诺数Ｒｅｃ＝１９０;扰动展向波长为λｃ一３．６ｄ．对雷诺数Ｒｅ为１８０,１９０两种工况下的圆柱三维绕流流场的计算进一步证实了这种流动的整体不稳定性．本文所预计的临界值比Ｎｏａｃｋ等人的结果更为精确,与Ｂａｒｋｌｅｙ等人的ＤＮＳ解一致,与Ｗｉｌｌｉａｍｓｏｎ的实验相符．     

双烯合成反应与气相色谱法联合测定油品中共轭二烯烃含量的研究Ⅰ．填充柱气相色谱法

 利用气相色谱快速、准确的分析特点，代替滴定法测定油品中共轭二烯烃合成反应后的水解、滴定等复杂步骤，分析时间是原来的１／５～１／６。研究了二烯合成反应的反应程度和碘、三氯化铝作催化剂的情况。建立了独特的内标法和二烯烃含量的计算公式。新法省去复杂的传统计算过程，使测定和计算变得简单、迅速。     

掺铒氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiOx:H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和1.76时,分别对应77K和室温测量时最强的1.54μm光致发光.从15到250K的变温实验显示出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250K,光致发光强度减弱约1/2.     

调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱结构的光致发光谱研究

报道了调制掺杂的应变In_0.60Ga_0.40As/In_0.52Al_0.48As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型 关键词：     

掺饵氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiO_{x∶H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和 1.76时,分别对应77Ｋ和室温测量时最强的1.54μm光致发光.从15到250Ｋ的变温实验显示 出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个 复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解 释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250Ｋ,光致发光强度减弱约1/2. 关键词： 铒 光致发光 氧含量}