P与GaAs(100)表面相互作用的温度效应

本文采用原位X射线光电子能谱、紫外光电子能谱、高分辨率电子能量损失谱和低能电子衍射技术,研究了温度对P与GaAs(100)表面相互作用的影响。结果表明,经退火后,室温下淀积于GaAs表面的非晶P大部分脱附,仅剩下少量无规分布于表面的P集团。集团中部分P与衬底Ga原子成键,另一部分P则以单质形式存在,继续提高温度退火,将使P集团中的P全部与衬底发生反应生成GaAsP薄层。在高温GaAs衬底上淀积P,将得到GaAsP固溶体薄层。这一薄层有望成为GaAs表面理想的钝化膜。 关键词：     

高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

研制了一种GaAs基波长可调谐共振腔增强型探测器. 采用分子束外延设备生长In_0.25Ga_0.75As/GaAs量子阱作为器件的有源区, 无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐. 统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系, 且近似线性调谐,同时对器件响应峰的特性进行了理论分析. 关键词： GaAs 共振腔增强型探测器 高稳定 线性调谐     

硅掺杂氧化锡柔性薄膜晶体管的制备与特性

研究了柔性非晶硅掺杂氧化锡（SiSnO,STO）薄膜晶体管的电学特性及其在弯曲状态下的电学特性。通过射频磁控溅射在聚酰亚胺（Polyimide,PI）衬底上制备出了柔性非晶硅掺杂氧化锡薄膜晶体管。通过对比不同退火温度的器件性能,发现在300℃能获得最佳器件性能,其饱和迁移率达到2.71 cm²·V^-1·s^-1,开关比高于10⁶,亚阈值摆幅为1.95 V·dec^-1,阈值电压为2.42 V。对器件在不同曲率半径（5,10,20,30 mm）状态下进行输出特性和转移特性测试,发现其在弯曲状态下仍具有良好的电学性能。     

水溶性CuPc旋涂转速及退火方式对蓝色有机电致发光器件性能的影响

本文以Be(PP)₂为发光层、水溶性酞菁铜(WS-CuPc)为空穴注入层、NPB为空穴传输层,制备了结构为ITO/WS-CuPc/NPB/Be(PP)₂/LiF/Al的蓝色有机发光二极管(OLEDs).研究了WS-CuPc不同旋涂转速对器件性能的影响.并在WS-CuPc最佳旋涂转速的基础上,进一步研究了WS-CuPc薄膜不同退火方式对器件性能的影响.实验中,对WS-CuPc层采用了一种新的退火方式,即对ITO玻璃衬底先加热后旋涂WS-CuPc层,并与传统退火方式 关键词： 水溶性CuPc 蓝色有机电致发光 旋涂转速 退火方式     

一种新的GaAs PHEMT器件可靠性评估方法研究

通过研究应力前后GaAs PHEMT器件电特性的测量，分析了GaAs PHEMT退化的原因，从实验中 得出高场下碰撞电离的电离率与器件沟道电场峰值的关系曲线.对高场下碰撞电离率的实验 曲线进行拟合，可以得到碰撞电离率与器件沟道电场峰值的量化关系，由此可以对GaAs PHE MT器件的电性能和可靠性进行改善和评估.进一步改进GaAs PHEMT的击穿电压，将需要严格 控制沟道中的碰撞电离. 关键词： 高电子迁移率晶体管 碰撞电离率 可靠性评估     

In0.83Al0.17As倍增层对In0.83Ga0.17As/GaAs雪崩光电探测器的特性影响

倍增层对雪崩光电探测器内部载流子的碰撞电离至关重要,因此,采用三元化合物In_0.83Al_0.17As作为倍增层材料,借助器件仿真工具Silvaco-TCAD,详细探究了In_0.83Ga_0.17As/GaAs雪崩光电探测器的倍增层厚度及掺杂浓度对其内部电场强度、电流特性和电容特性的影响规律。研究表明,随着倍增层厚度的增加,器件的电场强度和电容呈减小趋势。同时,倍增层掺杂浓度的增大会引起电容和倍增层内的电场强度峰值增加。进一步研究发现,随着倍增层厚度的增加,器件的穿通电压线性增大,击穿电压先减小后增大,但倍增层掺杂浓度的增加会引起器件击穿电压的减小。此外,用电场分布和倍增因子的结合解释了器件穿通电压与击穿电压的变化。     

GaAs薄膜电池光电转换特性研究

微纳减反层结构及微纳金属等离激元结构能有效提高砷化镓(GaAs)薄膜光伏器件在可见到近红外波段的吸收效率。本文采用有限元法(FEM)分析了微纳减反层对GaAs光伏器件的光谱吸收率的影响,并获得相应结构的光电转换特性。进一步探究了在器件内部布置金纳米线对相应结构的光电特性的影响。对应的计算结果显示,微纳减反层结构及金属纳米线结构能有效增强器件的电学输出特性,并提高器件光电转换能力到19.6%。掌握微结构对光伏器件内部光电特性的影响规律可为器件设计和制备提供有益指导。     

多温度阶梯退火对有机聚合物太阳能电池器件性能的影响

以聚3-己氧基噻吩(P3HT)作为给体,富勒烯衍生物(ICBA)作为受体,制备了体异质结结构的聚合物太阳能电池,研究不同热退火条件对器件的光伏输出特性及稳定性的影响.研究发现,采用多温度、阶梯退火比单一温度退火能使器件的光伏输出性能明显提高,与此同时器件的寿命显著延长,可以在未封装的环境下保持器件性能的稳定,减缓器件的衰退.     

聚合物/TiO2分层光电导型器件的电荷传输特性

研究了聚合物PVK与TiO₂分层光电导器件的电荷传输特性,分别比较了两种器件:器件S₁(ITO/TiO₂/PVK/Al)和器件S₂(ITO/PVK/TiO₂/Al)。实验发现,器件S₁的暗电流远小于器件S₂的暗电流,S₁的正向峰值光电流约是其反向峰值光电流的4倍,而S₂的正向和反向峰值光电流都基本与S₁的反向峰值光电流相近。这是由于PVK/TiO₂界面处有效的电荷转移、恰当的电荷传输层、器件各层间能级匹配及其与电极功函数的匹配影响了光电流的强度大小。由此判断,器件S₁的性能要优于器件S₂。随电压的增大,S₁结构的光电导响应谱在短波区域的拖尾增大,而S₂结构几乎没有拖尾,这可能是两种结构的吸收和陷阱能级的差别造成的。     

AlGaAs/InGaAs/GaAs赝配高电子迁移晶体管的kink效应研究

利用二维器件模拟软件MEDICI对AlGaAs/InGaAs/GaAs赝配高电子迁移晶体管器(PHEMT)件进行了仿真，研究了PHEMT器件的掺杂浓度与电子浓度分布，PHEMT器件内部的电流走向及传输特性，重点研究了不同温度和不同势垒层浓度情况下PHEMT器件的kink效应.研究结果表明：kink效应主要与处于高层深能级中的陷阱俘获/反俘获过程有关，而不是只与碰撞电离有关. 关键词： 高电子迁移率晶体管 kink效应 二维电子气     

掺铬半绝缘砷化镓材料的硅离子注入

本文研究了半绝缘砷化镓中硅离子的注入,在对衬底材料进行挑选和注意离子源工作物质纯度的基础上,进行了₂₈Si₊注入,用无包封法退火,然后对注入层作了电学性质、背散射和光致发光谱测定,结合选择离子注硅的UHF应用的低噪声GaAs双栅MESFET的结果,1GHz下NF0.9dB和Ga10dB,对实验结果进行了讨论。 关键词：     

The Effect of Point Defects on the Activation Processes in Semiinsulating GaAs Irradiated by Si28 Ions

The layered concentration, concentration profile, and mobility of electrons in the Si²⁸ ion-implanted layers (IIL) of semiinsulating GaAs are investigated. The specific resistance of the latter is also studied upon radiation annealing (RA) in the temperature range 590–800 °C using electron energies higher than the threshold energy of defect formation. The IIL are shown to form during RA at much lower temperatures. The layers exhibit high electrical activation of Si²⁸ ions, with the electron-concentration profile corresponding to the calculated one, and a low concentration of residual defects limiting the electron mobility. The radiation annealing increases the resistance of semiinsulating GaAs. The calculations show that these effects are due to the Frenkel pairs (FP) generated by radiation. A high degree of ionization of GaAs atoms significantly reduces energies of potential barriers of diffusion, FP recombination, and electrical impurity activation.     

n型气相外延GaAs层中中子辐照感生缺陷的研究

本文研究了1MeV中子辐照在气相外延n-GaAs有源层中深能级缺陷的特性和热退火性能。结果表明,大多数感生缺陷是与两个以上原子位移有关的缺陷。另外,当H₁能级通火时,出现了一个新的缺陷能级E₅(E_c-0.73eV)。研究表明GaAs MESFET参数的变化主要是由于载流子去除。 关键词：     

1MeV Si+衬底加温注入Al0.3Ga0.7As/GaAs超晶格和GaAs的晶格损伤研究

用卢瑟福背散射／沟道技术研究了１ＭｅＶＳｉ⁺在衬底加温和室温下以不同剂量注入Ａｌ_0.3Ｇ_0.7Ａｓ／ＧａＡｓ超晶格和ＧａＡｓ后的晶格损伤。在衬底加温下，观察到Ａｌ_0.3Ｇａ_0.7Ａｓ／ＧａＡｓ超晶格和ＧａＡｓ都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围，以及两种速率失去平衡的临界剂量。超晶格比ＧａＡｓ更难以损伤，并且它的两种速率失去平衡的临界剂量也大于ＧａＡｓ中的相应临界剂量，用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。用ＣＮＤＯ／２量子化学方法计算了ＧａＡｓ和Ａｌ_xＧａ_1-xＡｓ中化学键的相对强度，并根据计算结果解释了注入过程中Ａｌ_0.3Ｇａ_0.7Ａｓ／ＧａＡｓ超晶格和ＧａＡｓ中晶格损伤程度的差别。 关键词：     

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In_0.17Ga_0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III--V compound semiconductor optoelectronic devices on Ge substrates.     

Channeling study of boron implanted silicon: Liquid nitrogen temperature implantation

Silicon samples have been boron implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 10¹⁵/cm². This dose rendered the implanted layer amorphous as viewed by helium ion backscattering. Four kinds of room temperature measurements were made on the same set of samples as a function of the isochronal annealing temperature. The measurements made were the determination of the substitutional boron content by the channeling technique using the B¹¹(p, α) nuclear reaction, observation of the disorder by helium ion backscattering, determination of the carrier concentration by van der Pauw Hall measurements, and the sheet resistivity by four point probe measurements. These measurements are compared with results from samples implanted at room temperature. The carrier concentration correlates well with the substitutional boron content for both room temperature and liquid nitrogen temperature implantations. Following annealing temperatures in the 600 to 800°C range, a much larger percentage of the boron lies on substitutional lattice sites, and therefore the carrier concentration is larger, if the implantation is done at liquid nitrogen temperature rather than at room temperature. Following liquid nitrogen temperature implantation, reverse annealing is observed from 600 to 800°C in the substitutional boron content, carrier concentration and sheet resistivity. The boron is more than 90 per cent substitutional after annealing to 1100°C for both the room temperature and liquid nitrogen temperature implantations. The low temperature implantation produced a buried amorphous layer, and this layer was observed to regrow from both the surface and substrate sides at approximately equal rates.     

4H-SiC射频功率MESFET的自热效应分析

采用载流子速度饱和理论,建立了包含“自热效应”影响的适用于4HSiCMESFET的大信号输出IV特性解析模型,在模型中引入了温度变化的因素,提出了非恒定衬底环境温度T0的热传导模型,模拟结果与实验值一致,证明基于这种模型的理论分析符合器件测试及应用的实际情况 关键词： 4H-SiC 射频 MESFET 直流I-V特性 自热效应     

Defect and photoluminescence profiles from thermally converted Cr-doped GaAs

Specimens of Cr-doped semi-insulating (SI) GaAs have been annealed in quartz ampoules under vacuum at elevated temperatures. Some samples, depending on temperature and time of anneal, were partially or wholly converted to p-type. In these cases CV measurements have been combined with serial sectioning to produce carrier concentration profiles. The As overpressure dependencies indicate acceptors to be associated with Ga vacancies. The diffusion coefficient of the Ga vacancies was estimated to be about 3.35 × 10^-14cm²sec^-1 at 950°C. Low temperature photoluminescence on the converted samples show a reasonably good correspondence between carrier distribution profile and the intensity of copper luminescence peak on photoluminescence spectra taken at various depth in the crystals.     

4 K photoluminescence characterization of silicon implanted GaAs

GaAs technology for microwave devices (MESFET and MMIC) has received a significant improvement by ion implantation of silicon to form n-type active channel regions. Owing to amphoteric behaviour of silicon in GaAs, different activation of the implanted species can be obtained, depending on the post-implantation annealing treatment. In this paper we describe the results of the influence of rapid thermal annealing on implanted GaAs and using 4 K photoluminescence spectroscopy we identify the corresponding species (Si_AS and Si_AS-V_AS complex) in silicon doped GaAs and explain the electrical behaviour of the implanted and annealed material.     

半导体的CO2激光退火和合金化

本文主要研究连续CO₂激光对半导体的照射效应。实验结果与理论分析说明,用连续CO₂激光照射可将半导体样片加热到所需的温度。与其它短波长的激光不同,波长为10.6μm的连续CO₂激光照射半导体有如下特点:CO₂激光是借助于自由载流子吸收与半导体耦合;样片在深度方向被均匀加热;激光背面照射可以增强退火效果。连续CO₂激光照射可以固相外延再生长的方式使As离子注入Si的损伤层退火恢复。在再生长的过程中注入的As离子进入替位,电激活率很高,而且不发生杂质再分布。将连续CO₂激光背面照射成功地应用于GaAsFET制备欧姆接触,既可避免激光正面照射对器件结构的破坏,又能得到比热退火为好的电学性能。 关键词：