半导体的CO_2激光退火和合金化

本文主要研究连续CO_2激光对半导体的照射效应。实验结果与理论分析说明,用连续CO_2激光照射可将半导体样片加热到所需的温度。与其它短波长的激光不同,波长为10.6μm的连续CO_2激光照射半导体有如下特点:CO_2激光是借助于自由载流子吸收与半导体耦合;样片在深度方向被均匀加热;激光背面照射可以增强退火效果。连续CO_2激光照射可以固相外延再生长的方式使As离子注入Si的损伤层退火恢复。在再生长的过程中注入的As离子进入替位,电激活率很高,而且不发生杂质再分布。将连续CO_2激光背面照射成功地应用于GaAsFET制备欧姆接触,既可避免激光正面照射对器件结构的破坏,又能得到比热退火为好的电学性能。     

退火氧压对YBa2Cu3O7-x薄膜中的激光感生热电电压效应的影响

测量了在不同氧压下退火生长的YBa₂Cu₃O_7-x(YBCO)薄膜中的激光感生热电电压(LITV)信号,发现随退火氧压的增大可使LITV信号的峰值有2—4倍的增强,并且变化趋势与薄膜热电势的各向异性随氧含量的变化规律相同.波长在473—808nm范围内的连续激光辐照,在5000Pa的氧压下退火生长的YBCO薄膜中探测到的LITV信号最大;而紫外脉冲激光辐照时,LITV信号的最大值出现在退火氧压为10⁵Pa 关键词： 2Cu₃O_7-x薄膜')" href="#">YBa₂Cu₃O_7-x薄膜 激光感生热电电压 各向异性的Seebeck系数 氧含量     

优化封离型CO2激光工作气体的动力学机理研究

详细讨论了封离型CO₂激光器中CO₂，N₂和He三混合气 体含量被优化组合后的激光动力 学机理. 气体优化可以提高激光输出功率的主要机理是通过适当增加N₂含量， 使N₂激发 态与CO₂激光上能级的碰撞频率增加，提高了激光能级粒子数密度和相对布居数 . 同时， 适当减少CO₂含量，使总的电子动量输运碰撞频率减小、放电电流增大，导致增 加激光上转动能级的弛豫 关键词： 2激光')" href="#">CO₂激光 气体动力学 强化机理     

离子注入Si在连续CO2激光退火时的动态反射特性

本文用红外探测器测量了注磷Si在高功率连续CO₂激光辐照下反射率随时间的变化,发现在激光加热和随后冷却的过程中均出现不可逆的反射率跃升现象,这说明Si的表面载流子浓度也有着类似的变化。 关键词：     

用于红外激光防护的高开关率VO2薄膜

采用反应离子束溅射和后退火处理技术在石英玻璃基底上制备了具有纳米粒子的二氧化钒(VO₂)薄膜. 该薄膜具有半导体-金属相变特性,在3 μm处的开关率达到76.6%。 热致相变实验结果给出了准确的最佳退火温度为465 ℃. 仿真、热致相变和光致相变实验都显示VO₂薄膜在红外波段具有很高的光学开关特性. 光电池防护实验结果显示VO₂薄膜将硅光电池的抗干扰能力提升了2.6倍, 证明了VO₂在激光防护中的适用性. 采用连续可调节系统研究得到VO₂在室温条件下的相变阈值功率密度为4.35 W/cm², 损伤阈值功率密度为404 W/cm²。 低相变阈值和高损伤阈值都进一步证明VO₂薄膜适用于激光防护系统。本实验制备的VO₂薄膜在光开关、光电存储器、智能窗等方面也具有广泛的应用价值.     

高位振动态RbH（X1∑+,v"≥15）与CO2碰撞转移中的能量相关性

研究了高位振动态RbH（X¹∑⁺,v″=15～21）与CO₂碰撞转移过程.脉冲激光激发RbH至高位态,利用激光感应荧光光谱（LIF）得到RbH（X¹∑⁺,v″）与CO₂的猝灭速率系数k_v″（CO₂）,k_v″=21（CO₂）=2.7k_vⁿ=15（CO₂）.利用激光泛频光谱技术,测量了CO₂（00⁰,J）高转动态分布,得到了转动温度,从而获得了平均转动能rot>和转动能的变化<△E_rot>,发现<△E_rot>_v″=21≈2.9<△E_rot>_v″=15.对于v″=16,证实了振动—振动能量转移的4-1近共振过程.在一次碰撞条件下,通过速率方程分析,得到RH（v″）-CO₂振转速率系数.对于v″=15,J=32-48,速率系数在1.25-0.33×10^-13cm³s^-1.之间;对于v″=21,速率系数在2.47-1.53×10^-13cm³s^-1之间,其能量相关性是明显的.     

高温氢退火还原V2O5制备二氧化钒薄膜及其性能的研究

过渡金属氧化物二氧化钒(VO₂)在温度340 K附近会发生金属绝缘体的转变(metal-insulator transition, MIT). 基于金属绝缘体的转变性质, VO₂薄膜材料具有很好的应用前景. 本文首先采用脉冲激光沉积制备了高质量的V₂O₅薄膜, 再通过高温氢退火还原V₂O₅薄膜制备出VO₂多晶薄膜. 研究了不同的退火温度、退火时间、退火气氛对VO₂薄膜制备的影响, 采用X射线衍射、X射线光电子能谱、变温电阻特性测量等手段对样品进行分析, 发现在H₂(5%)/Ar退火气氛下, 在一定的退火温度范围内(500–525 ℃), 退火 3 h, 得到了B相和M相共存的VO₂薄膜, 具有M相的VO₂的MIT特性, 而相同退火温度下退火时间达到4.5 h, 薄膜完全变成B相的VO₂. 通过纯Ar气氛下对B相VO₂再退火, 得到了转变温度为350 K, 电阻突变接近4个数量级的M相的VO₂薄膜. 实现了VO₂的B相和M相的相互转变. 关键词： 2薄膜')" href="#">VO₂薄膜 金属绝缘体转变 氢退火     

激光辐照非晶Fe73.5Cu1Nb3Si13.5B 9微量晶化的穆斯堡尔谱研究

在激光功率为40—160W、扫描速度为10mm/s、激光光斑为20mm照射条件下,用CO ₂激 光辐照非晶Fe_73.5Cu₁Nb₃Si_13.5B_{9< /sub>产生微量晶化.利用透射穆斯堡尔谱 （TMS）技术分析了原始态和晶化后样品的超精细结构.确定了穆斯堡尔谱的基本参数——化 学位移(IS)、四极分裂(QS)、内磁场(Hhf)随激光功率变化的规律.分析表明，CO2关键词： 激光辐照 微量晶化 73.5Cu1Nb3 Si13.5B9')" href="#">非晶Fe73.5Cu1Nb3 Si13.5B9 穆斯堡尔谱}     

滑动弧裂解CO2机理

建立了一维滑动弧裂解CO₂的反应机理模型. 利用对流冷却的特征频率计算横向气流对流引起的等离子体组分损失. 将等离子体密度和温度的数值模拟结果与文献中滑动电弧等离子体反应器的实验数据进行了对比,吻合较好. 模拟结果表明,滑动弧裂解CO₂会产生大量O和O₂等活性助燃粒子以及可燃的CO. 随着对流冷却特征频率的增加,放电过程中最大电子数密度和电子温度减小,CO₂转化率下降. 在整个CO₂裂解机制中e+CO₂→e+CO+O的贡献最大,准稳态中贡献率为90.63%,瞬态中贡献率为98.43%. 反应CO+O+M→CO₂+M对CO₂生成的贡献率最大. 在实际应用中,为提高CO₂转化率,可以通过增大放电电流,增大e+CO₂→e+CO+O的反应速率,同时选择合适的气体流量,避免过大的速度引起CO₂转化率下降.      

导模法生长Er:Lu2O3连续激光特性

导模法是一种超高熔点晶体的有效生长方法,可以生长高质量、大尺寸、高掺杂的Er:Lu₂O₃晶体。本文测试了导模法生长的Er:Lu₂O₃晶体的荧光发射谱及连续激光特性,在室温下获得了斜效率为23.1%的2.85μm连续激光输出,最高输出功率5.24 W。80 min功率RMS(Root mean square)稳定性优于1.4%,不同输出功率水平的激光光束质量M²因子优于2.17。实验结果表明,导模法生长的Er:Lu₂O₃激光晶体具备输出高功率、高效率中红外激光的能力。     

Front and back surface cw CO2-laser annealing of arsenic ion-implanted silicon

The annealing behavior of arsenic-implanted silicon under scanned cw CO₂-laser irradiation from front and back surfaces is investigated. Ellipsometry, Hall effect, Rutherford backscattering measurements and neutron activation analysis indicate an enhancement of annealing efficiency by laser irradiation from the back surface, which provides complete recovery of crystal damage, high substitutionality and electrical activation of implanted arsenic atoms without redistribution of concentration profile. The enhancement of annealing efficiency under back-surface irradiation is explained by the difference in laser reflection from the front and back surface of silicon wafers. No differences in the results are found for scanned and static annealing.     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.     

Mössbauer spectroscopy of laser surfaces treated metallic materials

Laser treated surfaces of the Fe₈₃Si₁₇ alloy and of the coatings prepared on low-carbon steel by laser surface alloying with Ni and Al were investigated by means of Mossbauer spectroscopy. The short range order in the surface layer after irradiation by neodymium laser pulses was found to be similar to that before irradiation. The high quenching rate of a single melt pool after single pulse action seems to be masked by annealing due to the heat produced by successive pulses covering the whole surface. A detailed phase analysis of the coatings prepared by laser surface alloying was done. Seven different phases were found in dependence on chemical composition of alloy coatings and on traverse speed, i.e. the speed of relative motion of sample and the continuous CO₂-laser beam.     

New CW laser lines from CO2-laser pumped CH3OD

New laser wavelenghts have been observed from CW CO₂-laser optically pumped CH₃OD.     

Effect of pulses from a high-power ytterbium fiber laser on a material with a nonuniform refractive index. I. Irradiation of yttrium oxide targets

The irradiation of Nd:Y₂O₃ targets with an absorption coefficient of 13–1.7 × 10³ cm^?1 using laser pulses with a duration of 0.1–3.5 ms and peak power of 200–700 W at a power density of (0.2–1.3) × 10⁶ W/cm² is studied. A relatively large spread of the delay times of laser plume, spike emission of the laser plume, cleavage of the front surface of the target, and greater ejection of substance from the crater in comparison with the effect of the CO₂-laser radiation with almost the same power are demonstrated. A numerical model of the effect of radiation on a target with a nonuniform refractive index is proposed to interpret the destruction of dielectric material (cleavage of the front surface) and the large spread of the delay times of the plume.     

Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

In this paper, the effect of neutron irradiation on sapphire single crystal with fast neutron of 1.0×10¹⁸ and 1.0×10¹⁹ neutrons/cm² has been investigated along with the effect of annealing temperature. It is found that the colorless transparent sapphire single crystals were turned yellow after 10 MeV fast neutron irradiation at room temperature. There are peaks at 206, 230, 258, 305, 358 and 452 nm after neutron irradiation. And the intensity of optical absorption bands decrease with wavelength and annealing temperature. A new absorption peak at 452 nm was found after isothermal annealing at 400 °C for 10 min, which was ascribed to F₂⁺ color center. Because of the recombination of interstitial ions and vacancies, color centers were almost removed after annealing at 1000 °C. The TL peaks were found to shift to higher temperature after neutron irradiation. And a higher fluence of the neutron irradiation would result in deep traps revealed as the new TL peaks at 176 and 227 °C.     

Mixing of 30 THz laser radiation with nanometer thin-film Ni-NiO-Ni diodes and integrated bow-tie antennas

Mixing experiments with 30 THz CO₂-laser radiation as well as the detection of 35 ps 30 THz pulses of an optical-free-induction-decay CO₂-laser system have been performed with the first nanometer thin-film Ni-NiO-Ni diodes with a minimum contact area of 0.012 µm². Difference frequencies up to 85 MHz were detected by mixing two different CO₂-laser beams coupled to the diode with an integrated bow-tie antenna. The dependence of the beat signal on bias voltage, laser power and polarization of the infrared laser radiation was determined.     

CO2 gas resonance absorption at CO2 laser wavelength in?multiple laser coating

Multiple laser beams demonstrate many advantages as energy sources in diamond synthesis. In a reported amazingly-fast multiple laser coating technique, CO₂ gas is claimed as the sole precursor or secondary precursor for forming a diamond or diamond-like carbon, which remains poorly understood. The absorption coefficient changes under the irradiation of multiple lasers are one of the keys to resolve the mysteries of multiple laser beam coating processes. This study investigates the optical absorption in CO₂ gas at the CO₂ laser wavelength. The resonance absorption process is modeled as an inverse process of the lasing transitions of CO₂ lasers. The well-established CO₂ vibrational-rotational energy structures are used as the basis for the calculations with the Boltzmann distribution for equilibrium states and the three-temperature model for non-equilibrium states. Based on the population distribution, our predictions of the CO₂ absorption coefficient changes as a function of temperature are in agreement with the published data.     

Single mode CO2-laser pulses of high power

Single longitudinal mode CO₂-laser pulses of 200 MW power have been produced by seeding an unstable resonator cavity with single mode radiation from a hybrid low pressure — high pressure CO₂ laser system. The results indicate that a ratio of dominant over residual mode intensities of better than 10⁵ were achieved.     

Structural phase modification of glass-ceramic materials under CO2 laser irradiation

Reversibility of the structural phase modification of glass-ceramics (photosensitive and nonphotosensitive) under CO₂-laser irradiation has been experimentally demonstrated. It is shown that CO₂-laser irradiation leads to glass crystallization and subsequent reverse amorphization of the glass-ceramics FS-1 and ST-50-1. Upon laser heating, the rate of such structural modifications is two to three orders of magnitude higher than upon stationary furnace heating. The technology of laser structural modification of glass-ceramics is promising for developing and manufacturing new optical and other types of elements and microstructures.