硅掺杂氧化锡柔性薄膜晶体管的制备与特性

研究了柔性非晶硅掺杂氧化锡（SiSnO，STO）薄膜晶体管的电学特性及其在弯曲状态下的电学特性。通过射频磁控溅射在聚酰亚胺（Polyimide，PI）衬底上制备出了柔性非晶硅掺杂氧化锡薄膜晶体管。通过对比不同退火温度的器件性能，发现在300℃能获得最佳器件性能，其饱和迁移率达到2.71 cm²·V^-1·s^-1，开关比高于10⁶，亚阈值摆幅为1.95 V·dec^-1，阈值电压为2.42 V。对器件在不同曲率半径（5，10，20，30 mm）状态下进行输出特性和转移特性测试，发现其在弯曲状态下仍具有良好的电学性能。

Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO2 Active Layer

A kind of flexible amorphous silicon doped tin oxide(SiSnO, STO) thin film transistor (TFT) with anti-bending property of polyimide as a flexible substrate was prepared by RF magnetron sputtering method. By comparing the performance of the devices with different annealing temperatures, it is found that the best device performance is achieved at 300℃, the field effect mobility is 2.71 cm²·V^-1·s^-1, the switching ratio is higher than 10⁶ and the subthreshold swing is 1.95 V·dec^-1, and the threshold voltage is 2.42 V. By measuring the output characteristics and transfer characteristics of the device at different radius of curvature(5, 10, 20, 30 mm), the device is still operating well under the four different radii of curvature.