Low Threshold Distributed Feedback Quantum Cascade Lasers with Widely Spaced Emission Wavelengths

We report lasing properties of distributed feedback quantum cascade lasers （DFB QCLs） including a doublephonon-resonance active region, at wavelength of about 8.4 μm. A broad gain spectrum is generated due to the coupling between the lower laser level in the active region and the levels in the injector, and is demonstrated by the lasing spectrum of the corresponding Fabry-Perot QCLs whose width is 0.5 μm at 1.5 times of the threshold current. As a result, the DFB QCLs employing different grating periods exhibit a wavelength span of 0.18μm at room temperature and total wavelength coverage of 0.28μm at various heat sink temperatures. A high side mode suppression ratio of about 30dB and a low threshold current density of 1.78kA/cm^2 are achieved as the lasers operate at room temperature in pulsed mode.     

GaSb-based type-Ⅰ quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers

We report a Ga Sb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient Al Ga As Sb barrier and chirped Ga Sb/Al Sb/In As electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T0 is estimated at above 60 K.     

Quantum cascade lasers operating from 1.4 to 4 THz

The development of teranertz (THz) quantum cascade lasers (QCLs) has progressed considerably since their advent almost a decade ago.THz QCLs operating in a frequency range from 1.4 to 4 THz with electron-phonon scattering mediated depopulation schemes are described.Several different types of GaAs/AlGaAs superlattice designs are reviewed.Some of the best temperature performances are obtained by the so-called resonant-phonon designs that are described.Operation above a temperature of 160 K has been obtained across the spectrum for THz QCLs operating at ν > 1.8 THz.The maximum operating temperature of previously reported THz QCLs has empirically been limited to a value of ～ω/k B.A new design scheme for THz QCLs with scattering-assisted injection is shown to surpass this empirical temperature barrier,and is promising to improve the maximum operating temperatures of THz QCLs even further.     

Multipole resonance in the interaction of a spherical Ag nanoparticle with an emitting dipole

The effect of multipole resonance in the interaction between a spherical metallic nanoparticle （MNP） and an emitting dipole is studied with the Mie theory. The results show that the absorption peak of the MNP with respect to the field of the emitting dipole is blue-shifted with the decrease of the spacing between MNP and emitting dipole due to the enhanced multipole resonance. At a short distance, the enhanced multipole terms of scattering are not obvious compared with the dipole term. For the decay rate of the emitting dipole, multipole resonance brings about the enhancement of it largely at short spacing. For the radiative decay rate, the behavior is quite different. The dipole term is dominant at a short spacing, and the multipole term is dominant at a larger spacing.     

Room-Temperature Operation of 2.4 μm InGaAsSb/A1GaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.     

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AIGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2-7μm has been obtained with peaks at 3.1, 4.8 and 5.7μm. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector （QDIP） is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP, The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.     

Beat note analysis and spectral modulation of terahertz quantum cascade lasers with radio frequency injection

We demonstrate the electrical beat note analysis and radio frequency(RF) injection locking of a continuous wave(cw) terahertz quantum cascade laser(QCL) emitting around 3 THz(~100 μm). In free running the beat note frequency of the QCL shows a shift of ~180 MHz with increasing drive current. The beat note, modulation response, injection pulling, and terahertz emission spectral characteristics in the different current regimes I, II,and III are investigated. The results show that in the current regime I close to the laser threshold we obtain a narrower beat note and flat response to the RF modulation at the cavity round trip frequency. The pulling effect and spectral modulation measurements verify that in the current regime I the RF injection locking is more efficient and a robust tool to modulate the mode number and mode frequency of terahertz QCLs.     

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

We report on the resonance fluorescence(RF) from single In As quantum dots(QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He–Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond(ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.     

Temperature effect on emission lines and fluorescence lifetime of the 4F3/2 state of Nd:YVO4

By measuring the absorption and fluorescence spectra and the fluorescence lifetime of 4F3/2 state of Nd3+ions in YVO4 12 at.-%)crystal at different temperature,the effects of temperature on the spectra andthe lifetime of F3/2 state have been investigated.As the temperature is increased,the line width of the4F3/2 → 4I11/2 transitions is found to increase and the spectral line toward the longer wavelength,whichare duo to the ion-phonon interaction.The variation fluorescence lifetime of the 4F3/2 state of Nd:YVO4is found to be anomalous in the measured range 8-300 K.It is about 81 /μs at room temperature anddecreases to 30 /μs at 8 K.The experimental results are explained by ascribing to the thermal mixingbetween the two Stark levels of 4F3/2 state with different lifetime.     

Comparative study of adsorption characteristics of Cs on the GaN(0001) and GaN(000) surfaces

The adsorption characteristics of Cs on GaN(0001) and GaN(000) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations.The results show that the most stable position of the Cs adatom on the GaN(0001) surface is at the N-bridge site for 1/4 monolayer coverage.As the coverage of Cs atoms at the N-bridge site is increased,the adsorption energy reduces.As the Cs atoms achieve saturation,the adsorption is no longer stable when the coverage is 3/4 monolayer.The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer,and then rises with Cs atomic coverage.The most stable position of Cs adatoms on the GaN(000) surface is at H3 site for 1/4 monolayer coverage.As the Cs atomic coverage at H3 site is increased,the adsorption energy reduces,and the adsorption is still stable when the Cs adatom coverage is 1 monolayer.The work function reduces persistently,and does not rise with the increase of Cs coverage.     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

Efficiency of a blue organic light-emitting diode enhanced by inserting charge control layers into the emission region

We demonstrate high current efficiency of a blue fluorescent organic light-emitting diode (OLED) by using the charge control layers (CCLs) based on Alq3 . The CCLs that are inserted into the emitting layers (EMLs) could impede the hole injection and facilitate the electron transport, which can improve the carrier balance and further expand the exciton generation region. The maximal current efficiency of the optimal device is 5.89 cd/A at 1.81 mA/cm2 , which is about 2.19 times higher than that of the control device (CD) without the CCL, and the maximal luminance is 19.660 cd/m2 at 12V. The device shows a good color stability though the green light emitting material Alq3 is introduced as the CCL in the EML, but it has a poor lifetime due to the formation of cationic Alq3 species.     

Efficient Diode-Pumped Tm：YALO3 Laser with a Pump Recycling Scheme

By using a pump recycling configuration, the maximum power of 8.1 W in the wavelength range 1.935-1.938 μm is generated by a 5-ram long Tm：YAIOa （4 at.%） laser operating at 18℃ with a pump power of 24 W. The highest slope efficiency of 42% is attained, and the pump quantum efficiency is up to 100%. The Tm：YAlO3 laser is employed as a pumping source of singly-doped Ho（1%）：GdV04 laser operating at room temperature, in which continuous wave output power of greater than 0.2 W at 2.05/μm is achieved with a slope efficiency of 9%.     

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As_(0.91)Sb_(0.09) embedded in the Ga Sb barrier is calculated to be 0.53 e V(2.35μm),which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10~(-3)A/cm~2under-400-m V applied bias voltage and3.25×10~(-5)A/cm~2under zero,separately.The peak detectivity is 6.91×10~(10)cm·Hz~(1/2)/W under zero bias voltage at 300 K.     

Low-Threshold High-Temperature Operation of ～7.4μm Quantum Cascade Lasers

We report low-threshold high-temperature operation of 7.4#m strain-compensated InGaAs/lnAIAs quantum cascade lasers （QCLs）. For an uncoated 22-μm-wide and 2-mm-long laser, the low-threshold current densities, i.e. 0.33kA/cm^2 at 81 K in pulsed mode and 0.64kA/cm^2 at 84K in cw mode, are realized. High-temperature operation of uncoated devices, with a high value of 223K, is achieved in cw mode.     

Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes(LEDs)grown on silicon substrate was investigated.The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of In GaN.The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region,and the latter is attributed to the increased compressive stress in the quantum well.However,when the electrical stress aging tests were performed at a current density of 100 A/cm^2,LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress,resulting in the reduced light output power at low current density.     

Tapered Bragg reflection waveguide edge emitting lasers with near circular twin-beam emission

An edge emitting laser with two symmetrical near-circular spots located far field （FF） is demonstrated using tapered double-sided Bragg reflection waveguides （BRWs）. The BRWs consist of six pairs of top p-type and bottom n-type A10.Ga0.9 As/A10.3 Ga0.7As Bragg reflectors with a period thickness of 850 nm. The device has a 4° tapered angle configuration and exhibits two stable circular beams with a separation angle of 52°. Typical FF angles of 5.87° and 7.8° in the lateral and vertical directions, respectively, are achieved. The lateral FF angle in the ridged section is independent of the injection current （〉0.8 A） beeause of narrow ridge （-10 μm） confinement. By contrast, the FF angle in the tapered section shows an increase rate of 1.2 1.66°/A. The periodic modulation of the lasing wavelength is observed to be sensitive to self-heating effects.     

Thermal Analysis of InAs/AlSb Short Wavelength Mid-IR Quantum Cascade Lasers

We present the effects of hetero-interfaces and major key parameters on the thermal behaviors and performance of short wavelength mid-IR InAs/AlSb quantum cascade lasers （QCLs）. We use a finite element method （FEM） with commercial software, ANSYS, to simulate the heat dissipation in QCLs in cw operation mode with an epilayer-down mounting package. The thermal performance is characterized by the temperature increase AT （self-heating effect） between the active region of QCLs and the heatsink. Results show that （1） the self-heating effects of InAs/AlSb QCLs are much less than those in AlInAs/GaInAs Q, CLs, （2） narrower ridges lead to significantly cooler active regions of InAs/AlSb QCLs due to poor heat transport in the cross-plane direction （across interfaces） and that most of the heat flows out of the active region in the lateral direction, and （3） the cavity length of the laser has little influence on the self-beating effect of the device, but the long cavity reduces mirror loss and threshold current density.     

Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 μm

We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 μm at 90 K to 8.4 μm at 210 K. The second？order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2° is obtained in the direction along the waveguide.