A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.     

三维微纳米制造技术在癌症生物物理研究中的应用

癌症致命的主要原因是癌细胞在临床上的转移性. 癌细胞的侵袭和转移是一个非常复杂的三维过程, 但现有的癌症研究在活体上有诸多观测和操作上的困难. 而体外实验又通常在培养皿中进行, 其二维的生长环境已完全不能满足对癌细胞空间转移性的深入研究, 故在活体外构建出癌细胞侵袭和转移的三维物理模型具有十分重要的意义. 然而如何在体外尽可能真实地模拟体内癌细胞的生长微环境一直是困扰科学家的难题. 本文系统介绍了三维微纳米制造的几种主流技术, 探讨了它们在癌症生物物理研究中的应用和发展. 在此基础上为了在未来实现对体外三维模型的制造、观测和精确操作, 文章还创新性地提出了一种结合紫外线固化生物型水凝胶的三维成型技术、光片三维成像技术以及微纳米探针控制技术的一体化研究平台. 这些先进的技术和理念, 势必会逐步升级现有传统的癌症研究手段, 为未来理解和治疗癌症揭开全新的篇章.     

Numerical and Experimental Study on the Device Geometry Dependence of Performance of Heterjunction Phototransistors

Heterojunction phototransistors(HPTs)with scaling emitters have a higher optical gain compared to HPTs with normal emitters.However,to quantitativel.y describe the relationship between the emitter-absorber area ratio(A_e/A_a)and the performance of HPTs,and to find the optimum value of A_e/A_a for the geometric structure design,we develop an analytical model for the optical gain of HPTs.Moreover,five devices with different A_e/A_a are fabricated to verify the numerical analysis result.As is expected,the measurement result is in good agreement with the analysis model,both of them confirmed that devices with a smaller A_e/A_a exhibit higher optical gain.The device with area ratio of 0.0625 has the highest optical gain,which is two orders of magnitude larger than that of the device with area ratio of 1 at 3 V.However,the dark current of the device with the area ratio of 0.0625 is forty times higher than that of the device with the area ratio of 1.By calculating the signal-to-noise ratios(SNRs) of the devices,the optimal value of Ae/Aa can be obtained to be 0.16.The device with the area ratio of0.16 has the maximum SNR.This result can be used for future design principles for high performance HPTs.     

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As_(0.91)Sb_(0.09) embedded in the Ga Sb barrier is calculated to be 0.53 e V(2.35μm),which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10~(-3)A/cm~2under-400-m V applied bias voltage and3.25×10~(-5)A/cm~2under zero,separately.The peak detectivity is 6.91×10~(10)cm·Hz~(1/2)/W under zero bias voltage at 300 K.