80 Gb/s高速PAM4调制850 nm垂直腔面发射激光器

展示了高速直接调制850 nm氧化物限制垂直腔面发射激光器（VCSEL）的结果。优化设计应变InGaAs/AlGaAs量子阱以实现高微分增益,通过表面刻蚀来调节光子寿命实现响应平坦化。研制的氧化物孔径约7μm的VCSEL具有平坦的频率响应,3 dB调制带宽为24 GHz,相对噪声强度值-155 dB/Hz,未采用任何预加重和均衡技术情况下PAM4调制数据传输速率达80 Gb/s。     

Tapered Bragg reflection waveguide edge emitting lasers with near circular twin-beam emission

An edge emitting laser with two symmetrical near-circular spots located far field （FF） is demonstrated using tapered double-sided Bragg reflection waveguides （BRWs）. The BRWs consist of six pairs of top p-type and bottom n-type A10.Ga0.9 As/A10.3 Ga0.7As Bragg reflectors with a period thickness of 850 nm. The device has a 4° tapered angle configuration and exhibits two stable circular beams with a separation angle of 52°. Typical FF angles of 5.87° and 7.8° in the lateral and vertical directions, respectively, are achieved. The lateral FF angle in the ridged section is independent of the injection current （〉0.8 A） beeause of narrow ridge （-10 μm） confinement. By contrast, the FF angle in the tapered section shows an increase rate of 1.2 1.66°/A. The periodic modulation of the lasing wavelength is observed to be sensitive to self-heating effects.     

一种基于布拉格反射波导的表面等离子体激光光源（英文）

设计了一种基于布拉格反射波导的新型表面等离子体激光光源。这种光源结构简单,便于集成,可以在室温电泵浦的条件下工作,同时可以输出约毫瓦量级的表面等离子激光,相比于文献报道中纳米尺度的纳瓦级表面等离子体激光光源要高很多。该表面等离子体激光光源发射波长为808 nm,布拉格反射波导所提供的倾斜激光光线在我们设计的准Otto模型中可以直接耦合成为表面等离子体。     

High beam quality broad-area diode lasers by spectral beam combining with double filters

A modified spectral beam combining(SBC) approach based on double asymmetrical filters was proposed. By using this scheme, the high-order lateral modes at the edge of the far-field pattern can be suppressed in the external cavity, and the beam quality in the slow-axis direction was improved from 16.1 to 13.4 compared to the conventional SBC. In the meanwhile, the electrical-to-optical efficiency from the modified SBC was more than 40% with an output power of 34.1 W, which is similar to that of the conventional SBC.     

半导体超晶格声子激光器的研究进展

太赫兹频率的相干声子在纳米尺度器件的探测和操控领域具有重要的应用价值。半导体超晶格声子激光器是实现太赫兹频率相干声子源稳定输出的重要途径。本文首先回顾了GHz到THz频率范围声学放大的多种方法,然后详细阐述了超晶格声子放大、超晶格声学布拉格镜的工作原理与设计方法以及声子激光器的阈值条件,同时总结了电抽运和光抽运结构器件的研究现状,最后简要讨论了亚太赫兹声子激光器在声-电子领域的应用。分析表明,这种能够产生强相干太赫兹声子的半导体超晶格声子激光器在纳米尺度器件的探测与成像等方面具有广阔的发展前景。     

高亮度布拉格反射波导激光器

设计并制备了808 nm波长布拉格反射波导激光器,在垂直方向采用光子带隙效应进行光场限制,实现了超大光模式体积和单横模激射。所制备的10μm条宽、未镀腔面膜的器件在室温、准连续条件下的总输出功率可超过650 mW,最高功率受热扰动限制。激光器垂直方向和水平方向的远场发散角半高全宽分别为8.3°和8.1°,这种近圆形的光束输出可以有效地提高激光器的耦合效率。     

High efficiency beam combination of 4.6-μm quantum cascade lasers

The quantum cascade laser （QCL）, a potential laser source for mid-infrared applications, has all of the advantages of a semiconductor laser, such as small volume and light weight, and is driven by electric power. However, the optical power of a single QCL is limited by serious self-heating effects. Therefore, beam combination technology is essential to achieve higher laser powers. In this letter, we demonstrate a simple beam combination scheme using two QCLs to extend the output peak power of the lasers to 2.3 W. A high beam combination efficiency of 89% and beam quality factor of less than 5 are also achieved.     

Tapered Bragg reflection waveguide edge emitting lasers with near circular twin-beam emission简

Experiments on developing a frequency-stabilized 555.8-nm laser are presented. The 555.8-nm laser＇ is obtained by frequency doubling of a l lll.6-mn diode laser through single-passing a periodically poled lithium niobate （PPLN） waveguide. Tile 555.8-nm laser is then locked to a stable high-finesse Fabry Perot （FP） cavity by tile Pound Drever--Hall （PDH） technique. Tile finesse of the cavity is measured by tile heterodyne cavity ring-down spectroscopy technique. The linewidth of the 555.8-nm laser is investigated. Alter the laser is locked, the laser line width is reduced to about 3 kHz. This frequency-stabilized 555.8-nm laser is used in experiments on the laser cooling and trapping of ytterbium atoms to develop an ytterbium optical clock.     

基于小角度V形腔光谱合束的半导体激光器和频

通过小角度V形腔外腔光谱合束将两个808 nm半导体激光器合束,提高半导体激光器的输出功率及光束质量。两个合束单元分别工作在795.8 nm和800.5 nm,将所获光束通过非线性光学方法进行频率转换。外腔光谱合束实现输出功率为6.5 W快慢轴光束质量M²=2.2×18.5的光束输出,所获光束慢轴M²因子相较于自由运转单管激光器提高了30%,外腔光谱合束效率为83%。基于所获光源,实现了半导体激光器小角度V形腔外腔光谱合束和频,获得输出功率为18.3 mW波长为401.0 nm的蓝光输出,和频效率为0.28%。     

1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析

结合垂直腔面发射激光器（VCSEL）原理以及量子点增益特点，计算了不同结构VCSEL的腔内损耗和量子点的模式增益.分析了激光器阈值特性以及氧化限制层对光损耗的影响.设计了含 氧化限制层的13μm量子点VCSEL结构. 关键词： 量子点 垂直腔面发射激光器 增益